Influence of the Viscosity Modifier in H2O2–HBr–Ethylene Glycol Solutions on the Chemical Etching of PbTe Single Crystals and Pb1−xSnxTe Solid Solutions

The interaction of the CdTe and Zn0.04Cd0.96Te, Cd0.2Hg0.8Te solid solutions single crystals with the iodine-emerging etchings based on aqueous solutions of HNO3 + НІ + ethylene glycol has been investigated and etching compositions have been developed and optimized, as well as methods of their chemical treatment for the formation of high-quality surface. The dissolution of these semiconductor materials in the aqueous solutions of the (HNO3+HI+EG)/EG have been investigated and dependences “etchant composition – etching rate” with determining the regions of polishing and unpolishing solutions have been constructed. It was found that the semiconductors etching rate (chemical-mechanical polishing) decreases from 73.2 to 0.5 μm/min and the polishing features of the HNO3+HI+EG etching composition improve when the EG content is increasing. The minimum value of the etching rates is achieved when the saturation of the organic component is maximum (95 vol. %). The dependences of the chemical-mechanical polishing rate on the dilution of the base polishing etchant with ethylene glycol and the surface condition after polishing have investigated using metallographic analysis and atomic force microscopy. It was established that chemical-mechanical polishing of the CdTe and Zn0.04Cd0.96Te, Cd0.2Hg0.8Te solid solutions single crystals by the (HNO3+HI+EG)/EG solutions promote decreasing of the structural damages of the substrate and obtaining the high-quality polishing surface. It has been shown that etchant compositions of HNO3+HI+ EG with EG as a solvent completely meet the requirements for CMP etchants. Treatment of the Cd0.2Hg0.8Te crystal surfaces with new etchant mixtures allows to obtain ultra-smooth surfaces Ra = 1.5 nm. The polishing etchant compositions (HNO3+HI+EG)/EG and technological procedures of the chemical mechanical polishing for the disturbed layer elimination, controlled thinning of the plates up to reference dimension, as well as the thin layers removing and CdTe single crystals and Zn0.04Cd0.96Te, Cd0.2Hg0.8Te solid solutions finishing polishing have been optimized.

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The observation of defects on (100) CdTe surfaces by chemical etching

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100131759 ◽

1992 ◽

Vol 50 (2) ◽

pp. 1424-1425

Author(s):

M.E. Lee

Keyword(s):

Single Crystal ◽

Grain Boundaries ◽

Single Crystals ◽

Chemical Etching ◽

Crystalline Perfection ◽

Crystalline Defects ◽

High Incidence ◽

Crystallographic Defects ◽

Cdznte Substrates ◽

Device Technology

The crystalline perfection of bulk CdTe substrates plays an important role in their use in infrared device technology. The application of chemical etchants to determine crystal polarity or the density and distribution of crystallographic defects in (100) CdTe is not well understood. The lack of data on (100) CdTe surfaces is a result of the apparent difficulty in growing (100) CdTe single crystal substrates which is caused by a high incidence of twinning. Many etchants have been reported to predict polarity on one or both (111) CdTe planes but are considered to be unsuitable as defect etchants. An etchant reported recently has been considered to be a true defect etchant for CdTe, MCT and CdZnTe substrates. This etchant has been reported to reveal crystalline defects such as dislocations, grain boundaries and inclusions in (110) and (111) CdTe. In this study the effect of this new etchant on (100) CdTe surfaces is investigated.The single crystals used in this study were (100) CdTe as-cut slices (1mm thickness) from Bridgman-grown ingots.

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Three-Component Zone-Melting Method: Modeling of the Concentration-Component Distribution in Single Crystals of Ge–Si Solid Solutions

Semiconductors ◽

10.1134/s1063782621020032 ◽

2021 ◽

Vol 55 (2) ◽

pp. 283-288

Author(s):

Z. A. Aghamaliyev

Keyword(s):

Single Crystals ◽

Solid Solutions ◽

Zone Melting ◽

Melting Method ◽

Component Distribution

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Structure and Properties of Single Crystal Al2O3 Implanted with Chromium and Zirconium

MRS Proceedings ◽

10.1557/proc-7-147 ◽

1981 ◽

Vol 7 ◽

Cited By ~ 9

Author(s):

C. J. Mchargue ◽

H. Naramoto ◽

B. R. Appleton ◽

C. W. White ◽

J. M. Williams

Keyword(s):

Fracture Toughness ◽

Single Crystal ◽

Single Crystals ◽

Solid Solutions ◽

Rutherford Backscattering ◽

Structure And Properties ◽

Indentation Fracture ◽

Surface Layers ◽

Indentation Fracture Toughness

ABSTRACTSingle crystals of Al2O3 were implanted with chromium and zirconium to fluences of 1 × 1016 to 1 × 1017 ions cm−2. Rutherford backscattering-channeling studies showed the surface layers to be damaged but crystalline with the implanted ions randomly distributed. The microhardness and indentation fracture toughness were higher for the random solutions than for conventionally formed solid solutions. Changes in structure and properties caused by annealing in air at temperatures up to 1800°C were studied.

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