scholarly journals Electron and hole effective masses in heavily boron doped silicon nanostructures determined using cyclotron resonance experiments

2018 ◽  
Vol 21 (3) ◽  
pp. 249-255
Author(s):  
D. V. Savchenko ◽  
2014 ◽  
Vol 48 (12) ◽  
pp. 1605-1612 ◽  
Author(s):  
N. T. Bagraev ◽  
R. V. Kuzmin ◽  
A. S. Gurin ◽  
L. E. Klyachkin ◽  
A. M. Malyarenko ◽  
...  

2020 ◽  
Vol 127 (5) ◽  
pp. 055703 ◽  
Author(s):  
Jan K. Prüßing ◽  
Tim Böckendorf ◽  
Gerry Hamdana ◽  
Erwin Peiner ◽  
Hartmut Bracht

Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.


2010 ◽  
Vol 484 (4-6) ◽  
pp. 258-260 ◽  
Author(s):  
D.D.D. Ma ◽  
K.S. Chan ◽  
D.M. Chen ◽  
S.T. Lee

Solar RRL ◽  
2021 ◽  
Author(s):  
Bruno Vicari Stefani ◽  
Moonyong Kim ◽  
Matthew Wright ◽  
Anastasia Soeriyadi ◽  
Dmitriy Andronikov ◽  
...  

2001 ◽  
Vol 89 (10) ◽  
pp. 5788-5790 ◽  
Author(s):  
I. Yonenaga ◽  
T. Taishi ◽  
X. Huang ◽  
K. Hoshikawa

1997 ◽  
Vol 505 ◽  
Author(s):  
Kazuyuki Mizuhara ◽  
Shinichi Takahashi ◽  
Jyunichi Kurokawa ◽  
Noboru Morita ◽  
Yoshitaro Yoshida

ABSTRACTThe effects of temperatures on the stress evaluation of boron doped silicon in solid and film forms are investigated. Several techniques, such as fluid cooling to eliminate the temperature raise and/or simultaneous observation of Stokes and anti Stokes peaks to compensate the temperature effects, are applied. The advantages and disadvantages of each method and the abilities and limits of these techniques are discussed.


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