Evaluation of Residual Stresses in Thin Films by Means of Micro-Raman Spectroscopy

1997 ◽  
Vol 505 ◽  
Author(s):  
Kazuyuki Mizuhara ◽  
Shinichi Takahashi ◽  
Jyunichi Kurokawa ◽  
Noboru Morita ◽  
Yoshitaro Yoshida
Keyword(s):  
Raman Spectroscopy ◽  
Temperature Effects ◽  
Simultaneous Observation ◽  
Stress Evaluation ◽  
Advantages And Disadvantages ◽  
Micro Raman Spectroscopy ◽  
Boron Doped ◽  
Doped Silicon ◽  
Fluid Cooling ◽  
Anti Stokes

ABSTRACTThe effects of temperatures on the stress evaluation of boron doped silicon in solid and film forms are investigated. Several techniques, such as fluid cooling to eliminate the temperature raise and/or simultaneous observation of Stokes and anti Stokes peaks to compensate the temperature effects, are applied. The advantages and disadvantages of each method and the abilities and limits of these techniques are discussed.

Micro-Raman spectroscopy applied to polymers

1992 ◽  
Vol 50 (2) ◽  
pp. 1508-1509
Author(s):  
Robert J. Meier
Keyword(s):  
Raman Spectroscopy ◽  
Morphological Changes ◽  
Depth Resolution ◽  
Lateral Resolution ◽  
Micro Raman Spectroscopy ◽  
High Laser ◽  
Set Up ◽  
Microscopic Set ◽  
Anti Stokes ◽  
Micro Analysis

Over the last years micro-Raman spectroscopy has developed to a mature subdiscipline within the field of Raman spectroscopy. Its potential power seems obvious: (a) fluorescence suppression, a major obstacle in many Raman spectra; (b) micro-analysis of samples down to 1 μm lateral resolution yielding molecular information; (c) when using a confocal arrangement with the microscope, in addition to lateral resolution the depth resolution can be enhanced up to the 1 μm level.We applied micro-Raman spectroscopy over the last few years and recently developed a confocal Raman microscopic set-up. Our main application being in the field of polymers, the first thing to worry about is to what happens to the polymer sample when it is irradiated locally with a high laser power density. One should be warned even long before melting in order to avoid morphological changes because, after all, Raman spectroscopy is a powerful tool to study polymer morphology in detail. We use the Stokes/Anti-Stokes intensity ratio for determining the sample temperature.

scholarly journals Dopant mapping in highly p-doped silicon by micro-Raman spectroscopy at various injection levels

2013 ◽  
Vol 113 (2) ◽  
pp. 023514 ◽  
Author(s):  
T. Kunz ◽  
M. T. Hessmann ◽  
S. Seren ◽  
B. Meidel ◽  
B. Terheiden ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Micro Raman Spectroscopy ◽  
Doped Silicon

scholarly journals A novel method for stress evaluation in chemically strengthened glass based on micro-Raman spectroscopy

2020 ◽  
Vol 3 (1) ◽  
Author(s):  
Nobuaki Terakado ◽  
Ryusei Sasaki ◽  
Yoshihiro Takahashi ◽  
Takumi Fujiwara ◽  
Shuji Orihara ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Stress Evaluation ◽  
Strengthened Glass ◽  
Micro Raman Spectroscopy ◽  
Novel Method

Preparation of integrated circuits for TEM electromigration in situ studies

1986 ◽  
Vol 44 ◽  
pp. 882-883
Author(s):  
J. V. Maskowitz ◽  
W. E. Rhoden ◽  
D. R. Kitchen ◽  
R. E. Omlor ◽  
P. F. Lloyd
Keyword(s):  
Integrated Circuits ◽  
Crystallographic Orientation ◽  
Silicon Wafers ◽  
Minimum Size ◽  
Test Vehicle ◽  
In Situ Studies ◽  
Boron Doped ◽  
Doped Silicon ◽  
Drill Holes

The fabrication of the aluminum bridge test vehicle for use in the crystallographic studies of electromigration involves several photolithographic processes, some common, while others quite unique. It is most important to start with a clean wafer of known orientation. The wafers used are 7 mil thick boron doped silicon. The diameter of the wafer is 1.5 inches with a resistivity of 10-20 ohm-cm. The crystallographic orientation is (111).Initial attempts were made to both drill and laser holes in the silicon wafers then back fill with photoresist or mounting wax. A diamond tipped dentist burr was used to successfully drill holes in the wafer. This proved unacceptable in that the perimeter of the hole was cracked and chipped. Additionally, the minimum size hole realizable was > 300 μm. The drilled holes could not be arrayed on the wafer to any extent because the wafer would not stand up to the stress of multiple drilling.

Micro-Raman Spectroscopy Evaluation of the Local Mechanical Stress in Shallow Trench Isolation CMOS Structures: Correlation with Defect Generation and Diode Leakage

1998 ◽  
Author(s):  
I. De Wolf ◽  
G. Groeseneken ◽  
H.E. Maes ◽  
M. Bolt ◽  
K. Barla ◽  
...  
Keyword(s):  
Raman Spectroscopy ◽  
Mechanical Stress ◽  
Defect Formation ◽  
Active Area ◽  
Wet Oxidation ◽  
Leakage Currents ◽  
Shallow Trench Isolation ◽  
Micro Raman Spectroscopy ◽  
Silicon Devices ◽  
Trench Isolation

Abstract It is shown, using micro-Raman spectroscopy, that Shallow Trench Isolation introduces high stresses in the active area of silicon devices when wet oxidation steps are used. These stresses result in defect formation in the active area, leading to high diode leakage currents. The stress levels are highest near the outer edges of line structures and at square structures. They also increase with decreasing active area dimensions.

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