Structural and Photoluminescence Properties of ZnO Nanowires

Arrays of ZnO nanowires are grown by the vapor-liquid-solid method on a silicon substrate. The results of XRD, SEM, and AFM studies show that the diameters of nanowires vary in the range (50–300) nm, and their length is up to 40 μm. The wires exhibit bright photoluminescence: the band corresponding to the near band edge region and one or two (depending on the growth conditions) defect-related bands. The intensity ratio of the bands reflects the non-stoichiometry of the material and can be controlled by the zinc evaporation temperature and the temperature in the growing zone.

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Photoluminescence excitation spectroscopy of GaAs:Er,O in the near‐band‐edge region

Journal of Applied Physics ◽

10.1063/1.362494 ◽

1996 ◽

Vol 79 (11) ◽

pp. 8682-8687 ◽

Cited By ~ 29

Author(s):

R. A. Hogg ◽

K. Takahei ◽

A. Taguchi

Keyword(s):

Band Edge ◽

Near Band Edge ◽

Edge Region ◽

Photoluminescence Excitation

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Stable enhancement of near-band-edge emission of ZnO nanowires by hydrogen incorporation

Nanotechnology ◽

10.1088/0957-4484/21/6/065709 ◽

2010 ◽

Vol 21 (6) ◽

pp. 065709 ◽

Cited By ~ 53

Author(s):

A Dev ◽

R Niepelt ◽

J P Richters ◽

C Ronning ◽

T Voss

Keyword(s):

Zno Nanowires ◽

Band Edge ◽

Near Band Edge Emission ◽

Near Band Edge ◽

Band Edge Emission ◽

Edge Emission ◽

Hydrogen Incorporation

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Self-Catalysed Vapor-Liquid-Solid Growth Mechanism of ZnO Nanowires Grown on Silicon Substrate Pre-Coated with ZnO Buffer Layer

Solid State Phenomena ◽

10.4028/www.scientific.net/ssp.307.64 ◽

2020 ◽

Vol 307 ◽

pp. 64-69

Author(s):

Naziha Jamaludin ◽

Samsudi Sakrani ◽

Kashif Tufail Chaudhary ◽

Jalil Ali ◽

Fairuz Diyana Ismail

Keyword(s):

Electron Microscopy ◽

Buffer Layer ◽

Growth Mechanism ◽

Silicon Substrate ◽

Zno Nanowires ◽

Vapor Liquid Solid ◽

Thermal Evaporation Method ◽

X Ray ◽

Zno Buffer Layer ◽

Vapor Liquid

The present article reports the growth mechanism of zinc oxide (ZnO) nanowires grown on silicon substrate pre-coated with ZnO buffer layer by thermal evaporation method. ZnO nanowires are grown for different growth time of 0, 30, 90 and 120 mins with controlled supply of Ar and O2 gas at 650 °C. The structural, morphological and crystallinity properties of ZnO nanowires are analyzed by field emission scanning electron microscopy (FESEM), energy dispersive X-ray (EDX) spectroscopy, high resolution transmission electron microscopy (HRTEM), and X-ray diffraction (XRD). FESEM images infers that, the nanowires growth is driven by self-catalysed vapor-liquid-solid mechanism, where the buffer layer serve as nucleation site. EDX spectra show the uniform composition and purity of ZnO nanowires. A strong (002) peak is detected in XRD spectra which indicates that the preferred growth orientation of the nanowires is toward the c-axis with a hexagonal wurtzite structure. The HRTEM microscopic graphs confirm the growth of nanowire along the preferred [0001] axis. Based on the analysis of grown ZnO nanowires, the probable growth mechanism is schematically presented.

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Correlation effect on the Anderson localization in the near band edge region

Physics Letters A ◽

10.1016/0375-9601(88)90681-0 ◽

1988 ◽

Vol 131 (9) ◽

pp. 517-523 ◽

Cited By ~ 6

Author(s):

Zhao-Qing Zhang ◽

Qian-Jin Chu

Keyword(s):

Anderson Localization ◽

Correlation Effect ◽

Band Edge ◽

Near Band Edge ◽

Edge Region

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Observation of Near Band Edge Transition in Aluminum Nitride Thin Film Grown by MOCVD

MRS Proceedings ◽

10.1557/proc-449-119 ◽

1996 ◽

Vol 449 ◽

Cited By ~ 6

Author(s):

Xiao Tang ◽

Fazla R. B. Hossain ◽

Kobchat Wongchotigul ◽

Michael G Spencer

Keyword(s):

Aluminum Nitride ◽

Band Edge ◽

Near Band Edge ◽

Edge Region ◽

Urbach Tail ◽

Carbon Doped ◽

Exciton Recombination ◽

Line Widths ◽

Dominant Peak ◽

Band Edge Transition

ABSTRACTThe Cathodoluminescence (CL) measurements of undoped and carbon doped aluminum nitride (AlN) thin films near the band-edge region were performed at 300, 77 and 4.2 K, respectively. These films were grown on three different substrates: 6H-SiC, 4H-SiC and sapphire. A dominant peak was observed in undoped samples around 5.9 eV. This peak can be further resolved into three distinct peaks at 6.05, 5.85, and 5.69 eV for AlN on sapphire. The temperature dependence of the peak positions and line widths were investigated. These peaks are believed to be due to exciton recombination. Also, the absorption spectra of carbon doped AlN on sapphire were analyzed to study the Urbach tail parameters which play an important role in near band-edge transitions.

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