Photoluminescence excitation spectroscopy of GaAs:Er,O in the near‐band‐edge region

1996 ◽  
Vol 79 (11) ◽  
pp. 8682-8687 ◽  
Author(s):  
R. A. Hogg ◽  
K. Takahei ◽  
A. Taguchi
1996 ◽  
Vol 449 ◽  
Author(s):  
Xiao Tang ◽  
Fazla R. B. Hossain ◽  
Kobchat Wongchotigul ◽  
Michael G Spencer

ABSTRACTThe Cathodoluminescence (CL) measurements of undoped and carbon doped aluminum nitride (AlN) thin films near the band-edge region were performed at 300, 77 and 4.2 K, respectively. These films were grown on three different substrates: 6H-SiC, 4H-SiC and sapphire. A dominant peak was observed in undoped samples around 5.9 eV. This peak can be further resolved into three distinct peaks at 6.05, 5.85, and 5.69 eV for AlN on sapphire. The temperature dependence of the peak positions and line widths were investigated. These peaks are believed to be due to exciton recombination. Also, the absorption spectra of carbon doped AlN on sapphire were analyzed to study the Urbach tail parameters which play an important role in near band-edge transitions.


1990 ◽  
Vol 159 (1) ◽  
pp. 443-448 ◽  
Author(s):  
N. Presser ◽  
G. Kudlek ◽  
J. Gutowski ◽  
S. M. Durbin ◽  
D. R. Menke ◽  
...  

2012 ◽  
Vol 57 (12) ◽  
pp. 1239
Author(s):  
G.Yu. Rudko ◽  
I.V. Dubrovin ◽  
A.I. Klimovskaya ◽  
E.G. Gule ◽  
P.M. Lytvyn ◽  
...  

Arrays of ZnO nanowires are grown by the vapor-liquid-solid method on a silicon substrate. The results of XRD, SEM, and AFM studies show that the diameters of nanowires vary in the range (50–300) nm, and their length is up to 40 μm. The wires exhibit bright photoluminescence: the band corresponding to the near band edge region and one or two (depending on the growth conditions) defect-related bands. The intensity ratio of the bands reflects the non-stoichiometry of the material and can be controlled by the zinc evaporation temperature and the temperature in the growing zone.


2006 ◽  
Vol 41 (5) ◽  
pp. 542-548 ◽  
Author(s):  
N.R.J. Poolton ◽  
B. Mauz ◽  
A. Lang ◽  
M. Jain ◽  
A.E.R. Malins

1987 ◽  
Vol 62 (7) ◽  
pp. 487-490 ◽  
Author(s):  
M Isshiki ◽  
T Kyotani ◽  
K Masumoto ◽  
W Uchida ◽  
S Suto

1998 ◽  
Vol 83 (8) ◽  
pp. 4397-4402 ◽  
Author(s):  
K. Kornitzer ◽  
K. Thonke ◽  
R. Sauer ◽  
M. Mayer ◽  
M. Kamp ◽  
...  
Keyword(s):  

1991 ◽  
Vol 10 (2) ◽  
pp. 247-252
Author(s):  
N. Presser ◽  
G. Kudlek ◽  
J. Gutowski ◽  
D.R. Menke ◽  
M. Kobayashi ◽  
...  

1995 ◽  
Vol 34 (Part 1, No. 1) ◽  
pp. 42-47 ◽  
Author(s):  
Gwo-Cherng Jiang ◽  
Yih Chang ◽  
Liann-Be Chang ◽  
Yung-Der Juang ◽  
SuLu

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