scholarly journals Photostimulated Luminescence in KClxBr1-x: Eu Phosphor Ceramics as a Two-dimensional Image Sensor Material for Ionizing Radiation.

1997 ◽  
Vol 117 (3) ◽  
pp. 142-146
Author(s):  
H. Nanto ◽  
Y. Douguchi ◽  
M. Kadota ◽  
J. Nishishita ◽  
M. Ikeda ◽  
...  
Keyword(s):  
Ionizing Radiation ◽  
Image Sensor ◽  
Photostimulated Luminescence ◽  
Two Dimensional ◽  
Sensor Material ◽  
Dimensional Image ◽  
Two Dimensional Image

a-Si TFT/PIN two-dimensional image sensor

1998 ◽  
Author(s):  
Ying Zhao ◽  
Jing Li ◽  
Junfeng Li ◽  
Shaozhen Xiong
Keyword(s):  
Image Sensor ◽  
Two Dimensional ◽  
Dimensional Image ◽  
Two Dimensional Image

A two-dimensional image sensor with aSi:H pin diodes

1991 ◽  
Vol 48-49 ◽  
pp. 521-525 ◽  
Author(s):  
Hidenori Mimura ◽  
Kazuyoshi Sai ◽  
Yasumitsu Ohta ◽  
Kazuo Yamamoto ◽  
Koich Kitamura
Keyword(s):  
Image Sensor ◽  
Two Dimensional ◽  
Pin Diodes ◽  
Dimensional Image ◽  
Two Dimensional Image

Optically Addressable Input Circuit for Two-Dimensional Image Sensing

1991 ◽  
Vol 219 ◽  
Author(s):  
M. Hack ◽  
A. G. Lewis ◽  
R. H. Bruce ◽  
R. Lujan
Keyword(s):  
Image Sensor ◽  
Input Circuit ◽  
Two Dimensional ◽  
Imaging Arrays ◽  
Dimensional Image ◽  
Two Dimensional Image ◽  
Image Sensing ◽  
Global Power ◽  
Global Connections ◽  
Si Thin Film

ABSTRACTUsing the combination of a novel amorphous silicon (a-Si) photosensing element and four a-Si thin-film transistors (TFTs) we have developed a circuit which has been incorporated into a two-dimensional image sensor to provide gain at the pixel level. Our circuit only requires two global connections and the complete array is fully process compatible with standard a-Si TFT fabrication procedures. This contrasts with conventional a-Si imaging arrays which have no gain at the pixel level, require an additional global power line, and necessitate a separate sensor deposition.

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