Basic Properties of an Ultrasonic Probe with a Through Hole for Puncture and Detection Principle of a Puncture Needle

2012 ◽  
Vol 132 (11) ◽  
pp. 420-424 ◽  
Author(s):  
Yuusuke Tanaka ◽  
Katsuhiko Tanaka ◽  
Susumu Sugiyama ◽  
Hisanori Shiomi ◽  
Yoshimasa Kurumi ◽  
...  
Keyword(s):  
Ultrasonic Probe ◽  
Basic Properties ◽  
Puncture Needle ◽  
Through Hole ◽  
Detection Principle

Basic Properties of an Ultrasonic Probe with a Through Hole for Puncture and Detection Principle of a Puncture Needle

2014 ◽  
Vol 97 (6) ◽  
pp. 67-73
Author(s):  
Yuusuke Tanaka ◽  
Katsuhiko Tanaka ◽  
Susumu Sugiyama ◽  
Hisanori Shiomi ◽  
Yoshimasa Kurumi ◽  
...  
Keyword(s):  
Ultrasonic Probe ◽  
Basic Properties ◽  
Puncture Needle ◽  
Through Hole ◽  
Detection Principle

scholarly journals Basic Properties of Ultrasonic Probe with a Through Hole for Medical Application

2012 ◽  
Vol 47 ◽  
pp. 366-369 ◽  
Author(s):  
Katsuhiko Tanaka ◽  
Yuusuke Tanaka ◽  
Hisanori Shiomi ◽  
Yoshimasa Kurumi ◽  
Tohoru Tani
Keyword(s):  
Medical Application ◽  
Ultrasonic Probe ◽  
Basic Properties ◽  
Through Hole

On the Essence and Tipology of International Public Goods

2005 ◽  
pp. 131-141
Author(s):  
V. Mortikov
Keyword(s):  
Economic Policy ◽  
Social Construction ◽  
Public Goods ◽  
Public Good ◽  
Global Public Goods ◽  
Club Goods ◽  
Basic Properties ◽  
International Public Goods ◽  
Regional Public Goods ◽  
Joint Products

The basic properties of international public goods are analyzed in the paper. Special attention is paid to the typology of international public goods: pure and impure, excludable and nonexcludable, club goods, regional public goods, joint products. The author argues that social construction of international public good depends on many factors, for example, government economic policy. Aggregation technologies in the supply of global public goods are examined.

The advancement of silicon-on-insulator (SOI) devices and their basic properties

2020 ◽  
Vol 23 (3) ◽  
pp. 227-252
Author(s):  
T.E. Rudenko ◽  
◽  
A.N. Nazarov ◽  
V.S. Lysenko ◽  
◽  
...  
Keyword(s):  
Silicon On Insulator ◽  
Basic Properties ◽  
Soi Devices

Copper-Filled Through-Hole Electrode of a ZnS Window Material for Sealing a Thermal Infrared Sensor

2010 ◽  
Vol 130 (9) ◽  
pp. 437-442
Author(s):  
Takafumi Fukumoto ◽  
Naoki Okamoto ◽  
Yoshimi Ohta ◽  
Yasuhiro Fukuyama ◽  
Masaki Hirota ◽  
...  
Keyword(s):  
Thermal Infrared ◽  
Infrared Sensor ◽  
Window Material ◽  
Through Hole

RF Characteristics of Through-Hole Interconnections Filled with Au-Sn Solder

2006 ◽  
Vol 126 (12) ◽  
pp. 649-654 ◽  
Author(s):  
Satoshi Yamamoto ◽  
Kohei Matsumaru ◽  
Tatsuo Suemasu
Keyword(s):  
Through Hole

Failure Localization of Intermittent Short Failures Caused by Vertical Conductive Anodic Filament Formation

2014 ◽  
Author(s):  
Daniel Nuez ◽  
Phoumra Tan
Keyword(s):  
Glass Fibers ◽  
Vertical Plane ◽  
Axis Formation ◽  
Metal Trace ◽  
Conductive Anodic Filament ◽  
Plated Through Hole ◽  
Voltage Gradients ◽  
Ic Package ◽  
Through Hole ◽  
Failure Localization

Abstract Conductive anodic filament (CAF) formation is a mechanism caused by an electrochemical migration of metals from a metal trace in ICs or in PCBs. This is commonly caused by the moisture build-up in the affected metal terminals in an IC package or PC board caused by critical temperature, high humidity and high voltage gradients conditions. This phenomenon is known to have caused catastrophic field failures on various OEMs electronic components in the past [1,7]. Most published articles on CAF described the formation of the filament in a lateral formation through the glass fiber interfaces between two adjacent metal planes [1-6, 8-12]. One common example is the CAF formation seen between PTH (Plated through Hole) in the laminated substrate with two different potentials causing shorts [1-6, 8-12]. In this paper, the Cu filament grows in a vertical fashion (z-axis formation) creating a vertical plane shorts between the upper and lower metal terminals in a laminated IC package substrate. The copper growth migration does not follow the fiber strands laterally or vertically through them. Instead, it grows through the stress created gaps between the impregnated carbon epoxy fillers from the upper metal trace to the lower metal trace with two different potentials, between the glass fibers. This vertical CAF mechanism creates a low resistive short that was sometimes found to be intermittent in nature. This paper presents some successful failure analysis approaches used to isolate and detect the failure locations for this type of failing devices. This paper also exposes the unique physical appearance of the vertical CAF formation.

Sign in / Sign up

Export Citation Format

Share Document