Growth of lithium borate crystals from the vitreous state

1994 ◽  
Vol 9 (8) ◽  
pp. 2051-2056 ◽  
Author(s):  
T. Katsumata ◽  
T. Yoshimura ◽  
K. Kanazawa ◽  
H. Aizawa

The morphology and the growth mechanism of lithium borate crystals from the vitreous state have been studied for various compositions, X = B/(Li + B), from 0.62 to 0.75. Crystalline phases and morphology of grown crystals varied with the composition. Octahedral and/or spherical Li2B4O7 crystals are seen in the specimen with X = 0.62, 0.64, 0.67, and 0.68. The spherical crystal is composed of an octahedral core and fibrous crystals. The size of the core varied with the composition of the starting glass, X. The fibrous crystal growth is supposed to arise from the morphological instability due to the compositional variation caused by the solute pileup at the growth interface.

Author(s):  
Necip Güven ◽  
Rodney W. Pease

Morphological features of montmorillonite aggregates in a large number of samples suggest that they may be formed by a dendritic crystal growth mechanism (i.e., tree-like growth by branching of a growth front).


2021 ◽  
Author(s):  
Fajar Inggit Pambudi ◽  
Michael William Anderson ◽  
Martin Attfield

Atomic force microscopy has been used to determine the surface crystal growth of two isostructural metal-organic frameworks, [Zn2(ndc)2(dabco)] (ndc = 1,4-naphthalene dicarboxylate, dabco = 4-diazabicyclo[2.2.2]octane) (1) and [Cu2(ndc)2(dabco)] (2) from...


2009 ◽  
Vol 469 (15-20) ◽  
pp. 1414-1417 ◽  
Author(s):  
S. Funaki ◽  
Y. Yoshida ◽  
Y. Ichino ◽  
Y. Takai ◽  
A. Ichinose ◽  
...  

2008 ◽  
Vol 24 (6) ◽  
pp. 681-689 ◽  
Author(s):  
Mingwen Chen ◽  
Zidong Wang ◽  
Jianxin Xie ◽  
Jian-Jun Xu

1985 ◽  
Vol 62 ◽  
Author(s):  
H. P. Strunk ◽  
A. Kessler ◽  
E. Bauser

ABSTRACTPlanar defects have been detected by transmission electron microscopy in silicon epitaxial layers that have been grown from Ga solutions below 500 °C. According to fringe contrast analysis, this defect can be modelled by a plane of Ga atoms within the Si lattice. This plane forms during crystal growth due to local preferential incorporation of Ga atoms at crystallographically defined sites, that occur repetitively in the trains of monomolecular growth steps at the liquid/solid growth interface.


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