Deposition and characterization of nanostructured Cu2O thin-film for potential photovoltaic applications

2013 ◽  
Vol 28 (13) ◽  
pp. 1740-1746 ◽  
Author(s):  
Nishant Gupta ◽  
Rajendra Singh ◽  
Fan Wu ◽  
Jagdish Narayan ◽  
Colin McMillen ◽  
...  

Abstract

2016 ◽  
Vol 612 ◽  
pp. 331-336 ◽  
Author(s):  
Jenifar Sultana ◽  
Anindita Das ◽  
Avishek Das ◽  
Nayan Ranjan Saha ◽  
Anupam Karmakar ◽  
...  

RSC Advances ◽  
2014 ◽  
Vol 4 (15) ◽  
pp. 7655 ◽  
Author(s):  
Yu-Kuei Hsu ◽  
Hung-Hsun Lin ◽  
Jan-Rung Wu ◽  
Mei-Hsin Chen ◽  
Ying-Chu Chen ◽  
...  

Solar Energy ◽  
2015 ◽  
Vol 122 ◽  
pp. 1193-1198 ◽  
Author(s):  
Mahmoud Abdelfatah ◽  
Johannes Ledig ◽  
Abdelhamid El-Shaer ◽  
Alexander Wagner ◽  
Azat Sharafeev ◽  
...  

2012 ◽  
Vol 520 (16) ◽  
pp. 5200-5205 ◽  
Author(s):  
Hsin-Yuan Mao ◽  
Shih-Yung Lo ◽  
Dong-Sing Wuu ◽  
Bing-Rui Wu ◽  
Sin-Liang Ou ◽  
...  

Author(s):  
E. L. Hall ◽  
A. Mogro-Campero ◽  
L. G. Turner ◽  
N. Lewis

There is great interest in the growth of thin superconducting films of YBa2Cu3Ox on silicon, since this is a necessary first step in the use of this superconductor in a variety of possible electronic applications including interconnects and hybrid semiconductor/superconductor devices. However, initial experiments in this area showed that drastic interdiffusion of Si into the superconductor occurred during annealing if the Y-Ba-Cu-O was deposited direcdy on Si or SiO2, and this interdiffusion destroyed the superconducting properties. This paper describes the results of the use of a zirconia buffer layer as a diffusion barrier in the growth of thin YBa2Cu3Ox films on Si. A more complete description of the growth and characterization of these films will be published elsewhere.Thin film deposition was carried out by sequential electron beam evaporation in vacuum onto clean or oxidized single crystal Si wafers. The first layer evaporated was 0.4 μm of zirconia.


Sign in / Sign up

Export Citation Format

Share Document