Unusual irradiation-induced disordering in Cu3Au near the critical temperature: An in situ study using electron diffraction

2018 ◽  
Vol 33 (22) ◽  
pp. 3841-3848
Author(s):  
Calvin Robert Lear ◽  
Robert S. Averback ◽  
Pascal Bellon ◽  
Andrea E. Sand ◽  
Marquis A. Kirk

Abstract

2016 ◽  
Vol 31 (5) ◽  
pp. 609-617 ◽  
Author(s):  
Yi Zhong ◽  
Mingliang Huang ◽  
Haitao Ma ◽  
Wei Dong ◽  
Yunpeng Wang ◽  
...  

Abstract


1999 ◽  
Vol 589 ◽  
Author(s):  
Renu Sharma ◽  
Eberhard Schweda ◽  
Dirk Naedele

AbstractStabilization of zirconia by anion exchange (N for O) is a novel idea. A number of oxy-nitrides with flourite-related (cubic) structure have been reported to form at high temperatures (1100°C). We have used a TEM equipped with environmental cell and Gatan Imaging Filter (GIF) to study the nitridation behavior of zirconia. The in situ observations reveal the formation of a cubic structure at ≈800°C when the Zr(OH) 4×H2O precursor was heated in ≈2 torr of NH3. The presence of N in the lattice is confirmed by electron energyloss spectroscopy.


2015 ◽  
Vol 30 (21) ◽  
pp. 3343-3353 ◽  
Author(s):  
Balila Nagamani Jaya ◽  
Sanjit Bhowmick ◽  
S.A. Syed Asif ◽  
Vikram Jayaram

Abstract


2017 ◽  
Vol 32 (24) ◽  
pp. 4514-4521
Author(s):  
Wolfgang Blum ◽  
Petr Král ◽  
Jiri Dvořák ◽  
Martin Petrenec ◽  
Philip Eisenlohr ◽  
...  

Abstract


2019 ◽  
Vol 34 (13) ◽  
pp. 2218-2228 ◽  
Author(s):  
Zhe Fan ◽  
Cuncai Fan ◽  
Jin Li ◽  
Zhongxia Shang ◽  
Sichuang Xue ◽  
...  
Keyword(s):  

Abstract


Author(s):  
Carolyn Nohr ◽  
Ann Ayres

Texts on electron diffraction recommend that the camera constant of the electron microscope be determine d by calibration with a standard crystalline specimen, using the equation


Author(s):  
D. Loretto ◽  
J. M. Gibson ◽  
S. M. Yalisove

The silicides CoSi2 and NiSi2 are both metallic with the fee flourite structure and lattice constants which are close to silicon (1.2% and 0.6% smaller at room temperature respectively) Consequently epitaxial cobalt and nickel disilicide can be grown on silicon. If these layers are formed by ultra high vacuum (UHV) deposition (also known as molecular beam epitaxy or MBE) their thickness can be controlled to within a few monolayers. Such ultrathin metal/silicon systems have many potential applications: for example electronic devices based on ballistic transport. They also provide a model system to study the properties of heterointerfaces. In this work we will discuss results obtained using in situ and ex situ transmission electron microscopy (TEM).In situ TEM is suited to the study of MBE growth for several reasons. It offers high spatial resolution and the ability to penetrate many monolayers of material. This is in contrast to the techniques which are usually employed for in situ measurements in MBE, for example low energy electron diffraction (LEED) and reflection high energy electron diffraction (RHEED), which are both sensitive to only a few monolayers at the surface.


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