Metal oxide memories based on thermochemical and valence change mechanisms

MRS Bulletin ◽  
2012 ◽  
Vol 37 (2) ◽  
pp. 131-137 ◽  
Author(s):  
J. Joshua Yang ◽  
Isao H. Inoue ◽  
Thomas Mikolajick ◽  
Cheol Seong Hwang

Abstract

2013 ◽  
Vol 28 (21) ◽  
pp. 2911-2931 ◽  
Author(s):  
Elisabetta Comini ◽  
Camilla Baratto ◽  
Guido Faglia ◽  
Matteo Ferroni ◽  
Andrea Ponzoni ◽  
...  

Abstract


2016 ◽  
Vol 31 (11) ◽  
pp. 1596-1607 ◽  
Author(s):  
Babajide Patrick Ajayi ◽  
Sudesh Kumari ◽  
Daniel Jaramillo-Cabanzo ◽  
Joshua Spurgeon ◽  
Jacek Jasinski ◽  
...  

Abstract


MRS Bulletin ◽  
2014 ◽  
Vol 39 (11) ◽  
pp. 970-975 ◽  
Author(s):  
Kunal Bhattacharya ◽  
Lucian Farcal ◽  
Bengt Fadeel

Abstract


2016 ◽  
Vol 32 (1) ◽  
pp. 16-36 ◽  
Author(s):  
Guoyong Wang ◽  
Xuning Leng ◽  
Shang Han ◽  
Yuan Shao ◽  
Sufeng Wei ◽  
...  

Abstract


Nanoscale ◽  
2019 ◽  
Vol 11 (39) ◽  
pp. 18201-18208 ◽  
Author(s):  
Andreas Kindsmüller ◽  
Alexander Meledin ◽  
Joachim Mayer ◽  
Rainer Waser ◽  
Dirk J. Wouters

This work investigates the oxygen exchange at the oxide/electrode interface in ReRAM devices and its influence on the forming behaviour.


2019 ◽  
Vol 34 (3) ◽  
pp. 456-464
Author(s):  
Piotr Zarzycki ◽  
Christopher A. Colla ◽  
Benjamin Gilbert ◽  
Kevin M. Rosso

Abstract


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