Voc Saturation Effect in High-temperature Hydrogenated Polycrystalline Silicon Thin-film Solar Cells

2011 ◽  
Vol 1321 ◽  
Author(s):  
Hidayat Hidayat ◽  
Per I. Widenborg ◽  
Armin G. Aberle

ABSTRACTHydrogenation of polycrystalline silicon thin-film solar cells is performed to improve the one-sun open-circuit voltage (Voc) of the device. Voc is found to increase linearly with increasing hydrogenation temperature and then saturates. For planar and textured samples, the Voc saturates at about 340 ºC and 307 ºC respectively. The low hydrogenation temperature helps to lower thermal budget during industrial process. Arrhenius plot of Voc prior to the saturation shows that the textured samples have lower activation energies than the planar sample. The activation energies of samples 188 (planar), 788 (textured) and 888 (textured) are 1.31 eV, 0.86 eV and 0.92 eV, respectively. The lower activation energies of the textured samples could be due to the shorter diffusion thickness and the increased surface area that is exposed to the hydrogen plasma.

2014 ◽  
Vol 562 ◽  
pp. 430-434 ◽  
Author(s):  
Jonathan Plentz ◽  
Gudrun Andrä ◽  
Annett Gawlik ◽  
Ingmar Höger ◽  
Guobin Jia ◽  
...  

2007 ◽  
Vol 2007 ◽  
pp. 1-11 ◽  
Author(s):  
Mason L. Terry ◽  
Daniel Inns ◽  
Armin G. Aberle

The changes in open-circuit voltage (Voc), short-circuit current density (Jsc), and internal quantum efficiency (IQE) of aLuminum induced crystallization, ion-assisted deposition (ALICIA) polycrystalline silicon thin-film solar cells on low-temperature glass substrates due to rapid thermal anneal (RTA) treatment and subsequent remote microwave hydrogen plasma passivation (hydrogenation) are examined. Voc improvements from 130 mV to 430 mV, Jsc improvements from 1.2 mA/cm2 to 11.3 mA/cm2, and peak IQE improvements from 16% to > 70% are achieved. A 1-second RTA plateau at 1000°C followed by hydrogenation increases the Jsc by a factor of 5.5. Secondary ion mass spectroscopy measurements are used to determine the concentration profiles of dopants, impurities, and hydrogen. Computer modeling based on simulations of the measured IQE data reveals that the minority carrier lifetime in the absorber region increases by 3 orders of magnitude to about 1 nanosecond (corresponding to a diffusion length of at least 1 μm) due to RTA and subsequent hydrogenation. The evaluation of the changes in the quantum efficiency and Voc due to RTA and hydrogenation with computer modeling significantly improves the understanding of the limiting factors to cell performance.


2002 ◽  
Vol 403-404 ◽  
pp. 258-262 ◽  
Author(s):  
E Christoffel ◽  
M Rusu ◽  
A Zerga ◽  
S Bourdais ◽  
S Noël ◽  
...  

2013 ◽  
Vol 113 (4) ◽  
pp. 044519 ◽  
Author(s):  
Christiane Becker ◽  
Marcel Pagels ◽  
Carolin Zachäus ◽  
Beatrix Pollakowski ◽  
Burkhard Beckhoff ◽  
...  

2014 ◽  
Vol 122 ◽  
pp. 146-151 ◽  
Author(s):  
Ying Huang ◽  
Nasim Sahraei ◽  
Per I. Widenborg ◽  
Ian Marius Peters ◽  
Goutam Kumar Dalapati ◽  
...  

2009 ◽  
Vol 93 (6-7) ◽  
pp. 1004-1008 ◽  
Author(s):  
S. Gall ◽  
C. Becker ◽  
E. Conrad ◽  
P. Dogan ◽  
F. Fenske ◽  
...  

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