Effect of c-Si1-xGex Thickness Grown by LPCVD on the Performance of Thin-Film a-Si/c-Si1-xGex/c-Si Heterojunction Solar Cells

ABSTRACTIn this paper the effect of Si1-xGex absorber layer thickness on thin film a-Si:H/crystalline-Si1-xGex/c-Si heterojunction solar cells (HIT cells) is studied by simulation and experiment. Cells with 1, 2 and 4 μm-thick epitaxial cap layers of p-type Si0.59Ge0.41 on top of 5 μm Si1-xGex graded buffer layers are fabricated and compared to study the effect of the absorber layer thickness. The results show no change in Voc (0.41V) and that Jsc increases from 17.2 to 18.1 mA/cm2 when the Si0.59Ge0.41 absorber layer thickness is increased from 1 to 4 μm. The effect of thickness on Jsc is also observed for 2 and 4 μm-thick Si and Si0.75Ge0.25 absorber layers. Experiments and simulations show that larger Ge fractions result in a higher magnitude and smaller thickness dependence of Jsc, due to the larger absorption coefficient that increases optical carrier generation in the near surface region for larger Ge contents.

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Comparative study of thin film n-i-p a-Si:H solar cells to investigate the effect of absorber layer thickness on the plasmonic enhancement using gold nanoparticles

Solar Energy ◽

10.1016/j.solener.2015.07.018 ◽

2015 ◽

Vol 120 ◽

pp. 257-262 ◽

Cited By ~ 12

Author(s):

Kazi Islam ◽

Farsad Imtiaz Chowdhury ◽

Ali Kemal Okyay ◽

Ammar Nayfeh

Keyword(s):

Thin Film ◽

Gold Nanoparticles ◽

Solar Cells ◽

Comparative Study ◽

Layer Thickness ◽

Absorber Layer ◽

Plasmonic Enhancement

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Influence of the absorber layer thickness and rod length on the performance of three-dimensional nanorods thin film hydrogenated amorphous silicon solar cells

Journal of Applied Physics ◽

10.1063/1.4803045 ◽

2013 ◽

Vol 113 (16) ◽

pp. 163106 ◽

Cited By ~ 6

Author(s):

Chung-I Ho ◽

Wei-Chieh Liang ◽

Dan-Ju Yeh ◽

Vin-Cent Su ◽

Po-Chuan Yang ◽

...

Keyword(s):

Thin Film ◽

Solar Cells ◽

Amorphous Silicon ◽

Layer Thickness ◽

Three Dimensional ◽

Hydrogenated Amorphous Silicon ◽

Absorber Layer ◽

Silicon Solar Cells ◽

Hydrogenated Amorphous

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Numerical Modelling Analysis for Carrier Concentration Level Optimization of CdTe Heterojunction Thin Film–Based Solar Cell with Different Non-Toxic Metal Chalcogenide Buffer Layers Replacements: Using SCAPS-1D Software

10.20944/preprints202110.0346.v1 ◽

2021 ◽

Author(s):

Samer H. Zyoud ◽

Ahed H. Zyoud ◽

Naser M. Ahmed ◽

Atef Abdekader

Keyword(s):

Thin Film ◽

Solar Cells ◽

Solar Cell ◽

Carrier Concentration ◽

Buffer Layer ◽

High Efficiency ◽

Toxic Metal ◽

Absorber Layer ◽

Buffer Layers ◽

Cds Thin Film

Cadmium telluride (CdTe), a metallic dichalcogenide material, has been utilized as an absorber layer for thin film-based solar cells with appropriate configurations, and the SCAPS-1D structures program has been used to evaluate the results. In both known and developing thin film photovoltaic systems, a CdS thin film buffer layer has been frequently employed as a traditional n-type heterojunction partner. In this study, numerical simulation was used to find a suitable non-toxic material for the buffer layer instead of CdS, among various types of buffer layers (ZnSe, ZnO, ZnS, and In2S3), and carrier concentrations for the absorber layer (NA) and buffer layer (ND) were varied to determine the optimal simulation parameters. carrier concentrations (NA from 2 x 1012 cm-3 to 2 x 1017 cm-3 and ND from 1 x 1016 cm-3 to 1 x 1022 ??−3) have been differed. The results showed that the CdS as buffer layer based CdTe absorber layer solar cell has the highest efficiency (?%) of 17.43%. Furthermore, high conversion efficiencies of 17.42% and 16.27% have been found for ZnSe and ZnO based buffer layers, respectively. As a result, ZnO and ZnSe are potential candidates for replacing the CdS buffer layer in thin-film solar cells. Here, the absorber (CdTe) and buffer (ZnSe) layers were chosen to improve the efficiency by finding the optimal density of the carrier concentration (acceptor and donor). The simulation findings above provide helpful recommendations for fabricating high-efficiency metal oxide-based solar cells in the lab.

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Photovoltaic properties of low-damage magnetron-sputtered n-type ZnO thin film/p-type Cu2O sheet heterojunction solar cells

Thin Solid Films ◽

10.1016/j.tsf.2020.137825 ◽

2020 ◽

Vol 697 ◽

pp. 137825 ◽

Cited By ~ 3

Author(s):

Toshihiro Miyata ◽

Hiroki Tokunaga ◽

Kyosuke Watanabe ◽

Noriaki Ikenaga ◽

Tadatsugu Minami

Keyword(s):

Thin Film ◽

Solar Cells ◽

Zno Thin Film ◽

Photovoltaic Properties ◽

Heterojunction Solar Cells ◽

P Type

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Heterojunction Solar Cells Fabricated with a Cu2o:Mn Thin Film Grown Epitaxially on p-Type Cu2o:Na Sheets By Electrochemical Deposition

ECS Meeting Abstracts ◽

10.1149/ma2016-02/15/1420 ◽

2016 ◽

Keyword(s):

Thin Film ◽

Solar Cells ◽

Electrochemical Deposition ◽

Heterojunction Solar Cells ◽

P Type

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Development of the Passivation Layer For P-type CuI Thin Film Fabricated by the 2-step Method as the Novel Hole Selective Contact of Silicon Heterojunction Solar Cells

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) ◽

10.1109/pvsc.2018.8547776 ◽

2018 ◽

Author(s):

Min Cui ◽

Kazuhiro Gotoh ◽

Yasuyoshi Kurokawa ◽

Noritaka Usami

Keyword(s):

Thin Film ◽

Solar Cells ◽

Passivation Layer ◽

The Novel ◽

Step Method ◽

Heterojunction Solar Cells ◽

P Type ◽

Silicon Heterojunction Solar Cells

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Numerical Modelling Analysis for Carrier Concentration Level Optimization of CdTe Heterojunction Thin Film–Based Solar Cell with Different Non–Toxic Metal Chalcogenide Buffer Layers Replacements: Using SCAPS–1D Software

Crystals ◽

10.3390/cryst11121454 ◽

2021 ◽

Vol 11 (12) ◽

pp. 1454 ◽

Cited By ~ 1

Author(s):

Samer H. Zyoud ◽

Ahed H. Zyoud ◽

Naser M. Ahmed ◽

Atef F. I. Abdelkader

Keyword(s):

Thin Film ◽

Solar Cells ◽

Solar Cell ◽

Carrier Concentration ◽

Buffer Layer ◽

High Efficiency ◽

Toxic Metal ◽

Absorber Layer ◽

Buffer Layers ◽

Cds Thin Film

Cadmium telluride (CdTe), a metallic dichalcogenide material, was utilized as an absorber layer for thin film–based solar cells with appropriate configurations and the SCAPS–1D structures program was used to evaluate the results. In both known and developing thin film photovoltaic systems, a CdS thin–film buffer layer is frequently employed as a traditional n–type heterojunction partner. In this study, numerical simulation was used to determine a suitable non–toxic material for the buffer layer that can be used instead of CdS, among various types of buffer layers (ZnSe, ZnO, ZnS and In2S3) and carrier concentrations for the absorber layer (NA) and buffer layer (ND) were varied to determine the optimal simulation parameters. Carrier concentrations (NA from 2 × 1012 cm−3 to 2 × 1017 cm−3 and ND from 1 × 1016 cm−3 to 1 × 1022 cm−3) differed. The results showed that the use of CdS as a buffer–layer–based CdTe absorber layer for solar cell had the highest efficiency (%) of 17.43%. Furthermore, high conversion efficiencies of 17.42% and 16.27% were for the ZnSe and ZnO-based buffer layers, respectively. As a result, ZnO and ZnSe are potential candidates for replacing the CdS buffer layer in thin–film solar cells. Here, the absorber (CdTe) and buffer (ZnSe) layers were chosen to improve the efficiency by finding the optimal density of the carrier concentration (acceptor and donor). The simulation findings above provide helpful recommendations for fabricating high–efficiency metal oxide–based solar cells in the lab.

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