Improved J sc by Increasing the Absorber Layer Thickness of Monoclinic‐Dominated Cu 2 SnS 3 Thin Film Solar Cells Fabricated on Flexible Mo Foil

Solar RRL ◽  
2022 ◽  
Author(s):  
Eunae Jo ◽  
Su Gil Kim ◽  
Kuldeep Singh Gour ◽  
Suyoung Jang ◽  
Jun Sung Jang ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Layer Thickness ◽  
Absorber Layer ◽  
Thin Film Solar Cells

Optical and electrical characterization of Cu(In,Ga)Se 2 thin film solar cells with varied absorber layer thickness

2015 ◽  
Vol 576 ◽  
pp. 75-80 ◽  
Author(s):  
Enrico Jarzembowski ◽  
Matthias Maiberg ◽  
Florian Obereigner ◽  
Kai Kaufmann ◽  
Stephan Krause ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Layer Thickness ◽  
Electrical Characterization ◽  
Absorber Layer ◽  
Thin Film Solar Cells

3-D architecture between indium tin oxide nano-rods and a solution processed CuInGaS2 absorber layer for thin film solar cells

2017 ◽  
Vol 636 ◽  
pp. 506-511 ◽  
Author(s):  
Van Ben Chu ◽  
Chan Sik Kim ◽  
Gi Soon Park ◽  
Young Ki Lee ◽  
Yun Jeong Hwang ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Absorber Layer ◽  
Thin Film Solar Cells ◽  
Solution Processed ◽  
Nano Rods

Effect of c-Si1-xGex Thickness Grown by LPCVD on the Performance of Thin-Film a-Si/c-Si1-xGex/c-Si Heterojunction Solar Cells

2012 ◽  
Vol 1447 ◽  
Author(s):  
Sabina Abdul Hadi ◽  
Pouya Hashemi ◽  
Nicole DiLello ◽  
Ammar Nayfeh ◽  
Judy L. Hoyt
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Layer Thickness ◽  
Surface Region ◽  
Absorber Layer ◽  
Buffer Layers ◽  
Optical Carrier ◽  
Near Surface ◽  
Heterojunction Solar Cells ◽  
P Type

ABSTRACTIn this paper the effect of Si1-xGex absorber layer thickness on thin film a-Si:H/crystalline-Si1-xGex/c-Si heterojunction solar cells (HIT cells) is studied by simulation and experiment. Cells with 1, 2 and 4 μm-thick epitaxial cap layers of p-type Si0.59Ge0.41 on top of 5 μm Si1-xGex graded buffer layers are fabricated and compared to study the effect of the absorber layer thickness. The results show no change in Voc (0.41V) and that Jsc increases from 17.2 to 18.1 mA/cm2 when the Si0.59Ge0.41 absorber layer thickness is increased from 1 to 4 μm. The effect of thickness on Jsc is also observed for 2 and 4 μm-thick Si and Si0.75Ge0.25 absorber layers. Experiments and simulations show that larger Ge fractions result in a higher magnitude and smaller thickness dependence of Jsc, due to the larger absorption coefficient that increases optical carrier generation in the near surface region for larger Ge contents.

scholarly journals Modified Back Contact Interface of CZTSe Thin Film Solar Cells: Elimination of Double Layer Distribution in Absorber Layer

2017 ◽  
Vol 5 (2) ◽  
pp. 1700645 ◽  
Author(s):  
Zhaojing Zhang ◽  
Liyong Yao ◽  
Yi Zhang ◽  
Jianping Ao ◽  
Jinlian Bi ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Double Layer ◽  
Absorber Layer ◽  
Thin Film Solar Cells ◽  
Back Contact ◽  
Contact Interface
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