Photovoltaic properties of low-damage magnetron-sputtered n-type ZnO thin film/p-type Cu2O sheet heterojunction solar cells

2020 ◽  
Vol 697 ◽  
pp. 137825 ◽  
Author(s):  
Toshihiro Miyata ◽  
Hiroki Tokunaga ◽  
Kyosuke Watanabe ◽  
Noriaki Ikenaga ◽  
Tadatsugu Minami
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Zno Thin Film ◽  
Photovoltaic Properties ◽  
Heterojunction Solar Cells ◽  
P Type

scholarly journals Dye-Sensitized Nanocrystalline ZnO Solar Cells Based on Ruthenium(II) Phendione Complexes

2011 ◽  
Vol 2011 ◽  
pp. 1-10 ◽  
Author(s):  
Hashem Shahroosvand ◽  
Parisa Abbasi ◽  
Mohsen Ameri ◽  
Mohammad Reza Riahi Dehkordi
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Conversion Efficiency ◽  
Short Circuit ◽  
Photocurrent Density ◽  
Open Circuit ◽  
Zno Thin Film ◽  
Photovoltaic Properties ◽  
Dye Sensitized ◽  
Ft Ir

The metal complexes ( (phen)2(phendione))(PF6)2(1), [ (phen)(bpy)(phendione))(PF6)2(2), and ( (bpy)2(phendione))(PF6)2(3) (phen = 1,10-phenanthroline, bpy = 2,2′-bipyridine and phendione = 1,10-phenanthroline-5,6-dione) have been synthesized as photo sensitizers for ZnO semiconductor in solar cells. FT-IR and absorption spectra showed the favorable interfacial binding between the dye-molecules and ZnO surface. The surface analysis and size of adsorbed dye on nanostructure ZnO were further examined with AFM and SEM. The AFM images clearly show both, the outgrowth of the complexes which are adsorbed on ZnO thin film and the depression of ZnO thin film. We have studied photovoltaic properties of dye-sensitized nanocrystalline semiconductor solar cells based on Ru phendione complexes, which gave power conversion efficiency of (η) of 1.54% under the standard AM 1.5 irradiation (100 mW cm−2) with a short-circuit photocurrent density () of 3.42 mA cm−2, an open-circuit photovoltage () of 0.622 V, and a fill factor (ff) of 0.72. Monochromatic incident photon to current conversion efficiency was 38% at 485 nm.

Effect of c-Si1-xGex Thickness Grown by LPCVD on the Performance of Thin-Film a-Si/c-Si1-xGex/c-Si Heterojunction Solar Cells

2012 ◽  
Vol 1447 ◽  
Author(s):  
Sabina Abdul Hadi ◽  
Pouya Hashemi ◽  
Nicole DiLello ◽  
Ammar Nayfeh ◽  
Judy L. Hoyt
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Layer Thickness ◽  
Surface Region ◽  
Absorber Layer ◽  
Buffer Layers ◽  
Optical Carrier ◽  
Near Surface ◽  
Heterojunction Solar Cells ◽  
P Type

ABSTRACTIn this paper the effect of Si1-xGex absorber layer thickness on thin film a-Si:H/crystalline-Si1-xGex/c-Si heterojunction solar cells (HIT cells) is studied by simulation and experiment. Cells with 1, 2 and 4 μm-thick epitaxial cap layers of p-type Si0.59Ge0.41 on top of 5 μm Si1-xGex graded buffer layers are fabricated and compared to study the effect of the absorber layer thickness. The results show no change in Voc (0.41V) and that Jsc increases from 17.2 to 18.1 mA/cm2 when the Si0.59Ge0.41 absorber layer thickness is increased from 1 to 4 μm. The effect of thickness on Jsc is also observed for 2 and 4 μm-thick Si and Si0.75Ge0.25 absorber layers. Experiments and simulations show that larger Ge fractions result in a higher magnitude and smaller thickness dependence of Jsc, due to the larger absorption coefficient that increases optical carrier generation in the near surface region for larger Ge contents.

Photovoltaic properties of CdS/phthalocyanine heterojunction cells

1983 ◽  
Vol 61 (5) ◽  
pp. 901-905 ◽  
Author(s):  
A.M. Hor ◽  
R. O. Loutfy
Keyword(s):  
Solar Cells ◽  
Cadmium Sulfide ◽  
Tin Oxide ◽  
Indium Tin Oxide ◽  
Optimum Thickness ◽  
Vacuum Deposition ◽  
Photovoltaic Properties ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Photovoltaic Characteristics

Photovoltaic heterojunction solar cells formed between n-type cadmium sulfide, CdS, and various p-type phthaloeyanines (Pc) such as H2Pc, ZnPc, MgPc, CuPc, MnPc, PbPc, and VOPc were investigated. The cells were prepared by electrodepositing thin CdS films onto conducting indium-tin oxide (ITO) followed by sequential vacuum deposition of the phthaloeyanines and gold layers. Among the seven phthaloeyanines studied, ZnPc and MgPc exhibited the highest photovoltaic activity. Some optimization work was done for both the ZnPc and MgPc heterojunction devices. The optimum thickness of CdS and phthaloeyanines was found to be 500 and 850 Å, respectively. Under an illumination of 50 mW cm−2, the photovoltaic characteristics of the ITO/CdS/ZnPc/Au cell were: Voc = 0.54 volts, Jsc = 285 μA cm−2, and η = 0.10%, while the ITO/CdS/MgPc/Au cell delivered Voc = 0.46 volts, Jsc = 231 μA cm−2, and η = 0.066%.

Doping- and size-dependent photovoltaic properties of p-type Si-quantum-dot heterojunction solar cells: correlation with photoluminescence

2010 ◽  
Vol 97 (7) ◽  
pp. 072108 ◽  
Author(s):  
Seung Hui Hong ◽  
Jae Hee Park ◽  
Dong Hee Shin ◽  
Chang Oh Kim ◽  
Suk-Ho Choi ◽  
...  
Keyword(s):  
Solar Cells ◽  
Quantum Dot ◽  
Photovoltaic Properties ◽  
Heterojunction Solar Cells ◽  
Size Dependent ◽  
Si Quantum Dot ◽  
P Type

Photovoltaic properties of n-type amorphous In–Ga–Zn–O and p-type single crystal Si heterojunction solar cells: Effects of Ga content

2012 ◽  
Vol 520 (10) ◽  
pp. 3808-3812 ◽  
Author(s):  
Kyeongmi Lee ◽  
Kenji Nomura ◽  
Hiroshi Yanagi ◽  
Toshio Kamiya ◽  
Hideo Hosono
Keyword(s):  
Solar Cells ◽  
Single Crystal ◽  
Photovoltaic Properties ◽  
Heterojunction Solar Cells ◽  
P Type ◽  
Ga Content

scholarly journals DETERMINATION OF TECHNOLOGY AND MANUFACTURING CONDITIONS FOR HETEROSTRUCTURED THIN-FILM SOLAR CELLS

2020 ◽  
Author(s):  
S. Olimov ◽  
A. Kasimakhunova
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Selection Criteria ◽  
High Efficiency ◽  
Material Selection ◽  
Advanced Technology ◽  
Base Layer ◽  
Heterojunction Solar Cells ◽  
P Type

The paper presents the results of research on the most advanced technology for manufacturing semiconductor photovoltaic energy converters. Methods of manufacturing and research of thin-film heterojunction solar cells based on p-type silicon are analyzed. The materials of the initial components and the structure of the thin-film solar cell were selected. According to the results of the developed technology for obtaining a high-efficiency Converter with a base layer of p-type by sputtering on a vacuum magnetron machine with accelerated heat treatment, ways to improve the performance of solar cells are indicated. The main requirements for the production of the most efficient photovoltaic converters are explained. The electrophysical properties of semiconductors were used as the basis for the material selection criteria

Synthesis of Si Nanowires by Electroless Etching Technique and Their Integration Into I-III-VI2 Thin Films For Solar Cells

2012 ◽  
Vol 1408 ◽  
Author(s):  
H. Karaagac ◽  
M. Parlak ◽  
M. Saif Islam
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Power Conversion ◽  
Dense Array ◽  
Si Nanowires ◽  
Etching Technique ◽  
Heterojunction Solar Cells ◽  
Electroless Etching ◽  
P Type ◽  
Scanning Electron

ABSTRACTSi nanowires (NWs) have been fabricated by Ag-assisted electroless etching technique using an HF/AgNO3 aqueous solution. Scanning electron microscopy (SEM) measurements have revealed that a highly dense array of Si NWs with length of ∼1.4 μm is formed over the surface of both n-type and p-type Si (100) substrates. Following the fabrication of Si NWs, electron-beam evaporated p-type AgGa0.5In0.5Se2 thin film was deposited on the n-type Si NWs to form p-n heterojunction solar cells. The fabricated solar cells yield a 5.50% power conversion efficiency under AM (1.5) illumination.

Achieving over 4% efficiency for SnS/CdS thin-film solar cells by improving the heterojunction interface quality

2020 ◽  
Vol 8 (39) ◽  
pp. 20658-20665 ◽  
Author(s):  
Jae Yu Cho ◽  
SeongYeon Kim ◽  
Raju Nandi ◽  
Junsung Jang ◽  
Hee-Sun Yun ◽  
...  
Keyword(s):  
Thin Film ◽  
Solar Cells ◽  
Vapor Transport ◽  
Thin Film Solar Cells ◽  
Interface Quality ◽  
Heterojunction Solar Cells ◽  
Term Stability ◽  
Long Term Stability ◽  
Cds Thin Film

The highest efficiency of 4.225% for vapor-transport-deposited SnS absorber/CdS heterojunction solar cells with good long-term stability over two years is achieved.

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