Heterojunction Solar Cells Fabricated with a Cu2o:Mn Thin Film Grown Epitaxially on p-Type Cu2o:Na Sheets By Electrochemical Deposition

ABSTRACTIn this paper the effect of Si1-xGex absorber layer thickness on thin film a-Si:H/crystalline-Si1-xGex/c-Si heterojunction solar cells (HIT cells) is studied by simulation and experiment. Cells with 1, 2 and 4 μm-thick epitaxial cap layers of p-type Si0.59Ge0.41 on top of 5 μm Si1-xGex graded buffer layers are fabricated and compared to study the effect of the absorber layer thickness. The results show no change in Voc (0.41V) and that Jsc increases from 17.2 to 18.1 mA/cm2 when the Si0.59Ge0.41 absorber layer thickness is increased from 1 to 4 μm. The effect of thickness on Jsc is also observed for 2 and 4 μm-thick Si and Si0.75Ge0.25 absorber layers. Experiments and simulations show that larger Ge fractions result in a higher magnitude and smaller thickness dependence of Jsc, due to the larger absorption coefficient that increases optical carrier generation in the near surface region for larger Ge contents.

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Photovoltaic properties of low-damage magnetron-sputtered n-type ZnO thin film/p-type Cu2O sheet heterojunction solar cells

Thin Solid Films ◽

10.1016/j.tsf.2020.137825 ◽

2020 ◽

Vol 697 ◽

pp. 137825 ◽

Cited By ~ 3

Author(s):

Toshihiro Miyata ◽

Hiroki Tokunaga ◽

Kyosuke Watanabe ◽

Noriaki Ikenaga ◽

Tadatsugu Minami

Keyword(s):

Thin Film ◽

Solar Cells ◽

Zno Thin Film ◽

Photovoltaic Properties ◽

Heterojunction Solar Cells ◽

P Type

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Development of the Passivation Layer For P-type CuI Thin Film Fabricated by the 2-step Method as the Novel Hole Selective Contact of Silicon Heterojunction Solar Cells

2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC) ◽

10.1109/pvsc.2018.8547776 ◽

2018 ◽

Author(s):

Min Cui ◽

Kazuhiro Gotoh ◽

Yasuyoshi Kurokawa ◽

Noritaka Usami

Keyword(s):

Thin Film ◽

Solar Cells ◽

Passivation Layer ◽

The Novel ◽

Step Method ◽

Heterojunction Solar Cells ◽

P Type ◽

Silicon Heterojunction Solar Cells

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DETERMINATION OF TECHNOLOGY AND MANUFACTURING CONDITIONS FOR HETEROSTRUCTURED THIN-FILM SOLAR CELLS

ΛΌГOΣ МИСТЕЦТВО НАУКОВОЇ ДУМКИ ◽

10.36074/2663-4139.05.03 ◽

2020 ◽

Author(s):

S. Olimov ◽

A. Kasimakhunova

Keyword(s):

Thin Film ◽

Solar Cells ◽

Selection Criteria ◽

High Efficiency ◽

Material Selection ◽

Advanced Technology ◽

Base Layer ◽

Heterojunction Solar Cells ◽

P Type

The paper presents the results of research on the most advanced technology for manufacturing semiconductor photovoltaic energy converters. Methods of manufacturing and research of thin-film heterojunction solar cells based on p-type silicon are analyzed. The materials of the initial components and the structure of the thin-film solar cell were selected. According to the results of the developed technology for obtaining a high-efficiency Converter with a base layer of p-type by sputtering on a vacuum magnetron machine with accelerated heat treatment, ways to improve the performance of solar cells are indicated. The main requirements for the production of the most efficient photovoltaic converters are explained. The electrophysical properties of semiconductors were used as the basis for the material selection criteria

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Synthesis of Si Nanowires by Electroless Etching Technique and Their Integration Into I-III-VI2 Thin Films For Solar Cells

MRS Proceedings ◽

10.1557/opl.2012.40 ◽

2012 ◽

Vol 1408 ◽

Cited By ~ 1

Author(s):

H. Karaagac ◽

M. Parlak ◽

M. Saif Islam

Keyword(s):

Thin Film ◽

Solar Cells ◽

Power Conversion ◽

Dense Array ◽

Si Nanowires ◽

Etching Technique ◽

Heterojunction Solar Cells ◽

Electroless Etching ◽

P Type ◽

Scanning Electron

ABSTRACTSi nanowires (NWs) have been fabricated by Ag-assisted electroless etching technique using an HF/AgNO3 aqueous solution. Scanning electron microscopy (SEM) measurements have revealed that a highly dense array of Si NWs with length of ∼1.4 μm is formed over the surface of both n-type and p-type Si (100) substrates. Following the fabrication of Si NWs, electron-beam evaporated p-type AgGa0.5In0.5Se2 thin film was deposited on the n-type Si NWs to form p-n heterojunction solar cells. The fabricated solar cells yield a 5.50% power conversion efficiency under AM (1.5) illumination.

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Achieving over 4% efficiency for SnS/CdS thin-film solar cells by improving the heterojunction interface quality

Journal of Materials Chemistry A ◽

10.1039/d0ta06937j ◽

2020 ◽

Vol 8 (39) ◽

pp. 20658-20665 ◽

Cited By ~ 2

Author(s):

Jae Yu Cho ◽

SeongYeon Kim ◽

Raju Nandi ◽

Junsung Jang ◽

Hee-Sun Yun ◽

...

Keyword(s):

Thin Film ◽

Solar Cells ◽

Vapor Transport ◽

Thin Film Solar Cells ◽

Interface Quality ◽

Heterojunction Solar Cells ◽

Term Stability ◽

Long Term Stability ◽

Cds Thin Film

The highest efficiency of 4.225% for vapor-transport-deposited SnS absorber/CdS heterojunction solar cells with good long-term stability over two years is achieved.

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