Chemical Solution Based MoS2 Thin Film Deposition Based on Dimensional Reduction

2014 ◽  
Vol 1675 ◽  
pp. 215-218 ◽  
Author(s):  
Changqing Pan ◽  
Zhongwei Gao ◽  
Chih-hung Chang

ABSTRACTAs a promising transition metal dichalcogenide (TMDC), molybdenum disulfide (MoS2) has recently attracted a lot of attention due to its graphene-liked two dimensional layer structure, which leads to potential applications in electronic and optoelectronic devices. However, the fabrication of mono- or few-layer MoS2 is limited to ether liquid exfoliation or CVD, and the chemical solution deposition is limited to ammonium thiomolybdate-based precursor. In this paper, hydrazine-based dimensional reduction technique is applied in the chemical solution deposition of MoS2 thin-film, and a larger area uniform thin-film is obtained from bulk powder MoS2. This solution-based process could be applied with a variety coating techniques and lead to wafer level MoS2 thin film production.

2008 ◽  
Vol 468 (15-20) ◽  
pp. 1563-1566 ◽  
Author(s):  
W.T. Wang ◽  
G. Li ◽  
M.H. Pu ◽  
R.P. Sun ◽  
H.M. Zhou ◽  
...  

2016 ◽  
Vol 4 (47) ◽  
pp. 18457-18469 ◽  
Author(s):  
G. Maino ◽  
J. D'Haen ◽  
F. Mattelaer ◽  
C. Detavernier ◽  
A. Hardy ◽  
...  

Aqueous CSD provides LMO thin films at low T in a N2 ambient, eliminating issues with stacking and sensitive current collectors.


2018 ◽  
Vol 6 (15) ◽  
pp. 3834-3844 ◽  
Author(s):  
José Manuel Vila-Fungueiriño ◽  
Beatriz Rivas-Murias ◽  
Juan Rubio-Zuazo ◽  
Adrian Carretero-Genevrier ◽  
Massimo Lazzari ◽  
...  

Chemical solution methods for thin-film deposition constitute an affordable alternative to high-vacuum physical technologies, like Sputtering, Pulsed Laser Deposition (PLD) or Molecular Beam Epitaxy (MBE).


2013 ◽  
Vol 566 ◽  
pp. 187-190
Author(s):  
Keiichi Sasajima ◽  
Hiroshi Uchida

Thin films of (La,Sr)MnO3 (LSMO) were fabricated by industrial-versatile chemical solution deposition (CSD) technique. Well [100]-oriented LSMO films were fabricated at 650-750 °C by use of buffer layers of LaNiO3 buffer layer on a silicon substrate. The product of lower electrical resistivity is promising as an electrode of fatigue-free ferroelectric capacitor.


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