Processive acceleration of actin barbed-end assembly by N-WASP

Neuronal Wiskott–Aldrich syndrome protein (N-WASP)–activated actin polymerization drives extension of invadopodia and podosomes into the basement layer. In addition to activating Arp2/3, N-WASP binds actin-filament barbed ends, and both N-WASP and barbed ends are tightly clustered in these invasive structures. We use nanofibers coated with N-WASP WWCA domains as model cell surfaces and single-actin-filament imaging to determine how clustered N-WASP affects Arp2/3-independent barbed-end assembly. Individual barbed ends captured by WWCA domains grow at or below their diffusion-limited assembly rate. At high filament densities, however, overlapping filaments form buckles between their nanofiber tethers and myosin attachment points. These buckles grew ∼3.4-fold faster than the diffusion-limited rate of unattached barbed ends. N-WASP constructs with and without the native polyproline (PP) region show similar rate enhancements in the absence of profilin, but profilin slows barbed-end acceleration from constructs containing the PP region. Increasing Mg2+ to enhance filament bundling increases the frequency of filament buckle formation, consistent with a requirement of accelerated assembly on barbed-end bundling. We propose that this novel N-WASP assembly activity provides an Arp2/3-independent force that drives nascent filament bundles into the basement layer during cell invasion.

Microstructure Effects in Hot-wire Deposited Undoped Microcrystalline Silicon Films

ABSTRACTThe microstructure of hot-wire microcrystalline silicon films prepared at a wide range of deposition conditions was characterized by both the microstructure parameter from infrared absorption data (analyzing the Si-H stretching modes) and the effusion spectra of (low dose) implanted He and Ne. Parameter ranges leading to the growth of a dense material are identified. A (relatively) high silane flow at rather high filament temperature is found to result in a dense material at high deposition rate. The microstructure data obtained by the two microstructure characterization methods are found to be largely correlated.

Growth and Electronic Properties in Hot Wire Deposited Nanocrystalline Si Solar Cells

We report on the growth and properties of nanocrystalline Si:H grown using a remote hot wire deposition system. Unlike previous results, the temperature of the substrate is not significantly affected by the hot filament in our system. The crystallinity of the growing film and the type of grain structure was systematically varied by changing the filament temperature and the degree of hydrogen dilution. It was found that high hydrogen dilution gave rise to random nucleation and <111> grain growth, whereas lower hydrogen dilution led to preferable growth of <220> grains. Similarly, a high filament temperature gave rise to preferential <111> growth compared to lower filament temperature. The electronic properties such as defect density and minority carrier diffusion length were studied as a function of the degree of crystallinity. It was found that the lowest defect density was obtained for a material which had an intermediate range of crystallnity, as determined from the Raman spectrum. Both highly amorphous and highly crystalline materials gave higher defect densities. The diffusion lengths were measured using a quantum efficiency technique, and were found to be the highest for the mid-range crystalline material. The results suggest that having an amorphous tissue surrounding the crystalline grain helps in passivating the grain boundaries.

Low Defect Density Microcrystalline-Si Deposited by the Hot Wire Technique

ABSTRACTThe optical and electronic properties of a series of microcrystalline silicon (μ-Si) films, deposited by the hot wire (HW) technique, are reported. Preliminary results suggest, using moderate H2 /SiH4 dilution ratios and substrate temperatures (320°C), high filament temperatures, and no H gas purifier, that the subgap absorption for these films, measured using the constant photocurrent (CPM) method, can be as low as that obtained for films deposited by the very high frequency glow discharge (VHF-GD) technique. The film dark conductivities of the HW samples, ranging as low as 2.0 × 10−8 (ohm cm)−1, lend further credance to these low defect values. At the same time, the optical absorption in the region > 1.6 eV is higher than that previously observed for the VHF-GD deposited samples. The present results, discussed in the context of the film microcrystalline fraction, suggest that there is no unique, good quality, low defect density μ-Si material, and that different deposition techniques can be used to successfully deposit device quality gc-Si. We also present optical and structural data for films deposited at lower substrate temperatures and higher deposition rates, and suggest combinations of deposition parameters to be used that may further improve the electronic properties of these films.