Crystallization of yttrium-iron garnet (YIG) in thin films: Nucleation and growth aspects

AbstractWe have studied the crystallization of the yttrium - iron garnet (Y3Fe5O12, YIG) polycrystalline phase in thin films fabricated by means of pulsed laser deposition . Films were deposited on MgO substrates in vacuum, in argon, and in oxygen. A subsequent post-deposition heat treatment (annealing) was done at 800°C in air. We have shown that the crystallization of YIG was precluded by co-existent parasitic phases present in the as-deposited films. Specifically, the growth of the parasitic phase needs to be suppressed in order to get a single-phase polycrystalline YIG. Lowering the substrate temperature has been shown to be a simple and efficient way to suppress the growth of parasitic phase and to obtain good quality YIG films after thermal treatment. This procedure has been demonstrated to be successful even when the YIG films were grown in vacuum and their composition was significantly out of stoichiometry.

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Modification of pulsed laser deposited yttrium iron garnet thin films by post-deposition annealing procedures

10.1117/12.519515 ◽

2003 ◽

Author(s):

Mihaela E. Koleva ◽

Rumen I. Tomov ◽

Peter A. Atanasov ◽

Orlin I. Vankov ◽

Naiden I. Mihailov

Keyword(s):

Thin Films ◽

Yttrium Iron Garnet ◽

Pulsed Laser ◽

Post Deposition Annealing ◽

Yttrium Iron ◽

Iron Garnet ◽

Post Deposition

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The Structure and Electric Field Dependent Dielectric Properties of Annealed Sr1−xBaxTio3 Ferroelectric Thin Films

MRS Proceedings ◽

10.1557/proc-401-189 ◽

1995 ◽

Vol 401 ◽

Cited By ~ 5

Author(s):

L.A. Knauss ◽

J.M. Pond ◽

J.S. Horwitz ◽

C.H. Mueller ◽

R.E. Treece ◽

...

Keyword(s):

Thin Films ◽

Dielectric Properties ◽

Single Phase ◽

Pulsed Laser ◽

Lattice Parameter ◽

Laser Deposition ◽

X Ray Diffraction ◽

X Ray ◽

Deposited Films ◽

Post Deposition

AbstractThe effect of a post deposition anneal on the structure and dielectric properties of epitaxial Sr1−x, BaxTiO3 (SBT) thin films with x = 0.35, 0.50 and 0.60 has been measured. The films were grown by pulsed laser deposition on LaAlO3(001) substrates at 750°C in 350 mTorr of oxygen. The asdeposited films were single phase, (001) oriented with 0)-scan widths for the (002) reflection between 0.160 and 0.50'. The dielectric properties of the as-deposited films exhibit a broad temperature dependence and a peak which is as much as 50 K below the peak in bulk SBT. Also, the lattice parameter, as measured by x-ray diffraction, of the as-deposited films was larger than the bulk indicating strain in the films. The as-deposited films were annealed for 8 hours at 900°C in oxygen. The dielectric properties of the annealed films were closer to that of bulk SBT and the lattice parameter was closer to the bulk lattice parameter indicating a reduction of strain. Annealing of as-deposited films also resulted in an increased dielectric tuning without increased dielectric loss.

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