The Structure and Electric Field Dependent Dielectric Properties of Annealed Sr1−xBaxTio3 Ferroelectric Thin Films

1995 ◽  
Vol 401 ◽  
Author(s):  
L.A. Knauss ◽  
J.M. Pond ◽  
J.S. Horwitz ◽  
C.H. Mueller ◽  
R.E. Treece ◽  
...  
Keyword(s):  
Thin Films ◽  
Dielectric Properties ◽  
Single Phase ◽  
Pulsed Laser ◽  
Lattice Parameter ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Deposited Films ◽  
Post Deposition

AbstractThe effect of a post deposition anneal on the structure and dielectric properties of epitaxial Sr1−x, BaxTiO3 (SBT) thin films with x = 0.35, 0.50 and 0.60 has been measured. The films were grown by pulsed laser deposition on LaAlO3(001) substrates at 750°C in 350 mTorr of oxygen. The asdeposited films were single phase, (001) oriented with 0)-scan widths for the (002) reflection between 0.160 and 0.50'. The dielectric properties of the as-deposited films exhibit a broad temperature dependence and a peak which is as much as 50 K below the peak in bulk SBT. Also, the lattice parameter, as measured by x-ray diffraction, of the as-deposited films was larger than the bulk indicating strain in the films. The as-deposited films were annealed for 8 hours at 900°C in oxygen. The dielectric properties of the annealed films were closer to that of bulk SBT and the lattice parameter was closer to the bulk lattice parameter indicating a reduction of strain. Annealing of as-deposited films also resulted in an increased dielectric tuning without increased dielectric loss.

Colossal Magnetoresistance in Thick La0.7Ca0.3MnO3 Films

1995 ◽  
Vol 384 ◽  
Author(s):  
Randolph E. Treece ◽  
P. Dorsey ◽  
M. Rubinstein ◽  
J. M. Byers ◽  
J. S. Horwitz ◽  
...  
Keyword(s):  
Colossal Magnetoresistance ◽  
Single Phase ◽  
Laser Deposition ◽  
Orthorhombic Structure ◽  
X Ray Diffraction ◽  
Post Deposition Annealing ◽  
X Ray ◽  
Mr Effect ◽  
Deposited Films ◽  
Post Deposition

ABSTRACTThick films (0.6 and 2.0 μm) of the colossal magnetoresistance (CMR) material, La0.7Ca0.3MnO3 (LCMO), have been grown by pulsed laser deposition (PLD). The films were grown from single-phase LCMO targets in 100 mTorr 02 pressures and the material deposited on (100) LaAlO3 substrates at deposition temperatures of 800°C. The deposited films were characterized by X-ray diffraction (XRD), magnetic field-dependent resistivity, and Rutherford backscattering spectroscopy (RBS). The LCMO films were shown by XRD to adopt an orthorhombic structure. Brief post-deposition annealing led to ~50,000% and ~12,000% MR effect in the 0.6 μm and 2.0 μm films, respectively.

Study of Raman Spectrum of Fe Doped CeO2 Thin Films Grown by Pulsed Laser Deposition

2010 ◽  
Vol 123-125 ◽  
pp. 375-378 ◽  
Author(s):  
Ram Prakash ◽  
Shalendra Kumar ◽  
Chan Gyu Lee ◽  
S.K. Sharma ◽  
Marcelo Knobel ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Fe Doping ◽  
Full Width ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
X Ray

Ce1-xFexO2 (x=0, 0.01, 0.03 and 0.0 5) thin films were grown by pulsed laser deposition technique on Si and LaAlO3 (LAO) substrates. These films were deposited in vacuum and 200 mTorr oxygen partial pressure for both the substrates. These films were characterized by x-ray diffraction XRD and Raman spectroscopy measurements. XRD results reveal that these films are single phase. Raman results show F2g mode at ~466 cm-1 and defect peak at 489 cm-1 for film that deposited on LAO substrates, full width at half maximum (FWHM) is increasing with Fe doping for films deposited on both the substrates.

Crystallization of yttrium-iron garnet (YIG) in thin films: Nucleation and growth aspects

2007 ◽  
Vol 1036 ◽  
Author(s):  
Michael V. Zaezjev ◽  
Manda Chandra Sekhar ◽  
Marcello Ferrera ◽  
Luca Razzari ◽  
Barry M Holmes ◽  
...  
Keyword(s):  
Thin Films ◽  
Yttrium Iron Garnet ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Yttrium Iron ◽  
Iron Garnet ◽  
Parasitic Phase ◽  
Deposited Films ◽  
Post Deposition

AbstractWe have studied the crystallization of the yttrium - iron garnet (Y3Fe5O12, YIG) polycrystalline phase in thin films fabricated by means of pulsed laser deposition . Films were deposited on MgO substrates in vacuum, in argon, and in oxygen. A subsequent post-deposition heat treatment (annealing) was done at 800°C in air. We have shown that the crystallization of YIG was precluded by co-existent parasitic phases present in the as-deposited films. Specifically, the growth of the parasitic phase needs to be suppressed in order to get a single-phase polycrystalline YIG. Lowering the substrate temperature has been shown to be a simple and efficient way to suppress the growth of parasitic phase and to obtain good quality YIG films after thermal treatment. This procedure has been demonstrated to be successful even when the YIG films were grown in vacuum and their composition was significantly out of stoichiometry.

Texturing and Dielectric Properties of Laser Deposited BaTiO3 Thin Films Grown on Heated Substrates

1991 ◽  
Vol 243 ◽  
Author(s):  
M.D. Vaudin ◽  
L.P. Cook ◽  
W. Wong-Ng ◽  
P.K. Schenck ◽  
P.S. Brody ◽  
...  
Keyword(s):  
Electron Microscopy ◽  
Thin Films ◽  
Dielectric Properties ◽  
Electrical Properties ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Silicon Substrates ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
X Ray

AbstractThin films of BaTiO3 were deposited on platinum-coated silicon substrates using pulsed laser deposition and characterized using electron microscopy, powder x-ray diffraction and electrical measurements. The microstructure consisted of columnar BaTiO3 grains oriented normal to the substrate. Two preferred orientations were observed, with either the (001) or (111) planes of BaTiO3 being parallel to the substrate. The electrical properties of two films were measured and it was found that the (111) film was ferroelectric and the (001) film was not. Possible reasons for this are discussed.

Synchrotron X-ray Diffraction Study of Single-Phase β-AlN Thin Films Heteroepitaxially Grown on Sapphire (0001) Substrates by Pulsed Laser Deposition

2010 ◽  
Vol 49 (2) ◽  
pp. 020212 ◽  
Author(s):  
Kazushi Sumitani ◽  
Ryota Ohtani ◽  
Tomohiro Yoshida ◽  
You Nakagawa ◽  
Satoshi Mohri ◽  
...  
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Diffraction Study ◽  
Single Phase ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray

Frequency and Temperature Dependence of Dielectric Properties of Orthorhombic HoMnO3 Thin Films

2014 ◽  
Vol 1025-1026 ◽  
pp. 427-431
Author(s):  
Ping Gao ◽  
Wei Zhang ◽  
Wei Tian Wang
Keyword(s):  
Dielectric Properties ◽  
Pulsed Laser ◽  
Signal Amplitude ◽  
Debye Model ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray ◽  
Force Microscopy ◽  
Atomic Force ◽  
Cole Diagram

Orthorhombic HoMnO3 films were prepared epitaxially on Nb-doped SrTiO3 single crystal substrates by using pulsed laser deposition technique. The films showed perfectly a-axis crystallographic orientations. X-ray diffraction and atomic force microscopy were used to characterize the films. The complex dielectric properties were measured as functions of frequency (40 Hz~1 MHz) and temperature (80 K~300 K) with a signal amplitude of 50 mv. The respective dielectric relaxation peaks shifted to higher frequency as the measuring temperature increased, with the same development of real part of the complex permittivity. The cole-cole diagram was obtained according to the Debye model, and the effects of relaxation process were discussed.

CRYSTALLINE SrTiO3 THIN FILMS ON SILICON BY PULSED LASER DEPOSITION

2005 ◽  
Vol 19 (01n03) ◽  
pp. 533-535
Author(s):  
J. H. HAO ◽  
J. GAO
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
Perovskite Oxide ◽  
Deposition Technique ◽  
X Ray Diffraction ◽  
Rocking Curve ◽  
X Ray ◽  
Silicon Materials

We have developed a process to grow SrTiO 3 ( STO ) thin films showing single (110) orientation directly on Si by means of pulsed laser deposition technique. The growth of STO films directly on Si has been described. The crystallinity of the grown STO films was characterized by X-ray diffraction analysis of θ-2θ scan and rocking curve. Our results may be of interest for better understanding of the growth based on the perovskite oxide thin films on silicon materials.

Thermoelectric Properties of C-Axis-Oriented Ca3Co4O9+δ Films Grown on MgO-Buffered Si (100) by PLD Technique

2010 ◽  
Vol 29-32 ◽  
pp. 1913-1918
Author(s):  
Xia Zhang ◽  
Hong Chen ◽  
Qiu Hui Liao ◽  
Xia Li
Keyword(s):  
Thin Films ◽  
State Of The Art ◽  
Pulsed Laser ◽  
Buffer Layers ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
High Quality ◽  
X Ray ◽  
Current State ◽  
Good Crystallinity

High-quality c-axis-oriented Ca3Co4O9+δ thin films have been grown directly on Si (100) wafers with inserting MgO buffer layers by pulsed-laser deposition (PLD). X-ray diffraction and scan electron microscopy show good crystallinity of the Ca3Co4O9+δ films. The resistivity and Seebeck coefficient of the Ca3Co4O9+δ thin films on Si (100) substrates are 9.8 mΩcm and 189 μV/K at the temperature of 500K, respectively, comparable to the single-crystal samples. This advance demonstrates the possibility of integrating the cobaltate-based high thermoelectric materials with the current state-of-the-art silicon technology for thermoelectricity-on-a-chip applications.

Growth of CaFeOX/LaFeO3 Superlattice on SrTiO3(100) Substrates

2011 ◽  
Vol 1292 ◽  
Author(s):  
Nobuyuki Iwata ◽  
Mark Huijben ◽  
Guus Rijnders ◽  
Hiroshi Yamamoto ◽  
Dave H. A. Blank
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Layer Growth ◽  
Laser Deposition ◽  
Growth Mode ◽  
Layer By Layer ◽  
X Ray Diffraction ◽  
Reciprocal Space Mapping ◽  
X Ray

ABSTRACTThe CaFeOX(CFO) and LaFeO3(LFO) thin films as well as superlattices were fabricated on SrTiO3(100) substrates by pulsed laser deposition (PLD) method. The tetragonal LFO film grew with layer-by-layer growth mode until approximately 40 layers. In the case of CFO, initial three layers showed layer-by-layer growth, and afterward the growth mode was transferred to two layers-by-two layers (TLTL) growth mode. The RHEED oscillation was observed until the end of the growth, approximately 50nm. Orthorhombic twin CaFeO2.5 (CFO2.5) structure was obtained. However, it is expected that the initial three CFO layers are CaFeO3 (CFO3) with the valence of Fe4+. The CFO and LFO superlattice showed a step-terraces surface, and the superlattice satellite peaks in a 2θ-θ and reciprocal space mapping (RSM) x-ray diffraction (XRD) measurements, indicating that the clear interfaces were fabricated.

High temperature x-ray diffraction studies of zirconia thin films prepared by reactive pulsed laser deposition

2011 ◽  
Vol 47 (4) ◽  
pp. 415-422 ◽  
Author(s):  
G. Balakrishnan ◽  
P. Kuppusami ◽  
S. Murugesan ◽  
E. Mohandas ◽  
D. Sastikumar
Keyword(s):  
Thin Films ◽  
High Temperature ◽  
Pulsed Laser Deposition ◽  
Pulsed Laser ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
X Ray
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