Level Spectrum of a Single Gated Arsenic Donor in a Three Terminal Geometry

AbstractState of the art CMOS devices have been scaled to such dimensions that we need take atomistic approach to understand their operation for nano-electronics. From a bottoms-up perspective, the smallest functional element within a nano-device would be a single (dopant) atom itself. Control and understanding of the eigenenergies and wavefunctions of a single dopant in Si is a key ingredient for device technology beyond-CMOS like quantum-information processing. Here, we will discuss the eigenlevels of a single As donor in a three terminal configuration. The donor is incorporated in the channel of prototype transistors called FinFETs. The measured eigenlevels are shown to consist of levels associated with the donors Coulomb potential, levels associated with a triangular well at the gate interface and hybridized combinations of the two. The theoretical framework in which we describe this system (NEMO-3D) is based on a tight-binding approximation.

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Atomistic Understanding of a Single Gated Dopant Atom in a MOSFET

MRS Proceedings ◽

10.1557/proc-1067-b03-07 ◽

2008 ◽

Vol 1067 ◽

Cited By ~ 2

Author(s):

Gabriel Lansbergen ◽

Rajib Rahman ◽

Cameron Wellard ◽

Jaap Caro ◽

Nadine Collaert ◽

...

Keyword(s):

Coulomb Potential ◽

3D Model ◽

Semiconductor Devices ◽

Tight Binding ◽

Single Atom ◽

Dopant Atom ◽

Tight Binding Approximation ◽

Level Spectrum ◽

Beyond Cmos ◽

Device Technology

ABSTRACTCurrent semiconductor devices have been scaled to such dimensions that we need take an atomistic approach to understand their characteristics. The atomistic nature of these devices provides us with a tool to study the physics of very small ensembles of dopants right up to the limit of a single atom. Control and understanding of a dopants wavefunction and its coupling to the environment in a nanostructure could proof a key ingredient for device technology beyond-CMOS. Here, we will discuss the eigenlevels and transport characteristics a single gated As donor. The donor is incorporated in the channel of wrap-around gate transistors (FinFETs). The measured level spectrum is shown to consist of levels associated with the donors Coulomb potential, levels associated with a triangular well at the gate interface and hybridized combinations of the two. The level spectrum of this system can be well described by a NEMO-3D model, which is based on a numerical tight-binding approximation.

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On Detecting Relay Attacks on RFID Systems Using Qubits

Cryptography ◽

10.3390/cryptography4020014 ◽

2020 ◽

Vol 4 (2) ◽

pp. 14

Author(s):

Aysajan Abidin

Keyword(s):

Information Processing ◽

Quantum Information ◽

Access Control ◽

Control Systems ◽

Quantum Information Processing ◽

State Of The Art ◽

The State ◽

Rfid Technology ◽

Rfid Systems ◽

Communication Techniques

As RFID technology is being widely used in access control systems to identify and track both objects and people, relay attacks on RFID systems continue to pose serious threats to security. To mitigate relay attacks, distance bounding protocols can be used. Until recently, all distance bounding protocols were based on classical cryptography and communication techniques. In this paper, we take a closer look at a recently proposed protocol by Jannati and Ardeshir-Larijani [Quantum Information Processing 2016, 18] to detect relay attacks using qubits. We first observe that the protocol has a weakness which allows an adversary to mount a successful attack on the protocol. We then propose a countermeasure to restore security and compare the fixed protocol with the state of the art.

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