Effects of Neutron Irradiation and Post-Irradiation Annealing on the Radiant Output Power of Infrared Light Emitting Diodes

ABSTRACTThis paper presents results of a study of the degradation of commercially available GaAs and AlGaAs light emitting diodes subjected to neutron bombardment at a TRIGA reactor. Devices were characterized using current-voltage and light output measurements prior to and following a sequence of neutron irradiations and after high temperature annealing. A model is derived which can be used to determine the lifetime damage constant product, τoK, if the light output measurements as a function of IMeV equivalent neutron fluence are made at a fixed operating current. For current levels smaller than approximately 1 ma, τoK and operating current is logarithmic with τoK decreasing as current increases. Annealing at temperature up to 275°C recovers some of the neutroninduced damage but does not affect the validity of the model.

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Improved Light Output Power of GaN-Based Light-Emitting Diodes Using Double Photonic Quasi-Crystal Patterns

IEEE Electron Device Letters ◽

10.1109/led.2009.2029985 ◽

2009 ◽

Vol 30 (11) ◽

pp. 1152-1154 ◽

Cited By ~ 16

Author(s):

Hung-Wen Huang ◽

Chung-Hsiang Lin ◽

Zhi-Kai Huang ◽

Kang-Yuan Lee ◽

Chang-Chin Yu ◽

...

Keyword(s):

Output Power ◽

Light Emitting Diodes ◽

Light Output ◽

Light Output Power ◽

Light Emitting

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Enhancing Light Output Power of InGaN-Based Light-Emitting Diodes with an Embedded Self-Textured Oxide Mask Structure

Journal of The Electrochemical Society ◽

10.1149/2.071112jes ◽

2011 ◽

Vol 158 (12) ◽

pp. H1242 ◽

Cited By ~ 4

Author(s):

Wen-Yu Lin ◽

Kun-Ching Shen ◽

Ray-Hua Horng ◽

Dong-Sing Wuu

Keyword(s):

Output Power ◽

Light Emitting Diodes ◽

Light Output ◽

Light Output Power ◽

Light Emitting

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Electroluminescence Properties of Eu-doped GaN-based Light-emitting Diodes Grown by Organometallic Vapor Phase Epitaxy

MRS Proceedings ◽

10.1557/opl.2011.994 ◽

2011 ◽

Vol 1342 ◽

Cited By ~ 11

Author(s):

Atsushi Nishikawa ◽

Naoki Furukawa ◽

Dong-gun Lee ◽

Kosuke Kawabata ◽

Takanori Matsuno ◽

...

Keyword(s):

Layer Thickness ◽

Output Power ◽

Active Layer ◽

Vapor Phase ◽

Light Emitting Diodes ◽

Light Output ◽

Active Layer Thickness ◽

Organometallic Vapor Phase Epitaxy ◽

Light Output Power ◽

Light Emitting

ABSTRACTWe investigated the electroluminescence (EL) properties of Eu-doped GaN-based light-emitting diodes (LEDs) grown by organometallic vapor phase epitaxy (OMVPE). The thickness of the active layer was varied to increase the light output power. With increasing the active layer thickness, the light output power monotonically increased. The maximum light output power of 50 μW was obtained for an active layer thickness of 900 nm with an injected current of 20 mA, which is the highest value ever reported. The corresponding external quantum efficiency was 0.12%. The applied voltage for the LED operation also increased with the active layer thickness due to an increase in the resistance of the LED. Therefore, in terms of power efficiency, the optimized active layer thickness was around 600 nm. These results indicate that the optimization of the LED structure would effectively improve the luminescence properties.

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