Melting and Laser Annealing in Semiconductors using 0.485 μm and 0.193 μm Pulsed Lasers

1980 ◽  
Vol 2 ◽  
Author(s):  
J. Narayan ◽  
J. Fletcher ◽  
R. E. Eby
Keyword(s):  
Laser Irradiation ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Convincing Evidence ◽  
Dye Laser ◽  
Pulsed Lasers ◽  
Displacement Damage ◽  
Melting Phenomenon ◽  
Pulsed Laser Irradiation

ABSTRACTAnnealing of displacement damage, the dissolution of boron precipitates, the formation of constitution supercooling cells, and the broadening of dopant profiles have been studied in laser annealed silicon. These samples were irradiated with a dye laser (λ = 0.485 µm, τ = 9 ns, E = 0.7–1.2 J cm−2) and an Excimer laser (λ = 0.193 µm, τ= 9 ns, E = 0.5–0.7 J cm−2) pulses. These results can be consistently interpreted by invoking melting during pulsed laser irradiation. Thus these results provide convincing evidence for the melting phenomenon.

Pulsed Laser Annealing of Zirconia Capped, Native Oxides Free GaAs Surfaces

1983 ◽  
Vol 23 ◽  
Author(s):  
D. Pribat ◽  
L.M. Mercandalli ◽  
M. Croset ◽  
J. Siejka
Keyword(s):  
Laser Irradiation ◽  
Laser Annealing ◽  
Defect Density ◽  
Pulsed Laser ◽  
Native Oxide ◽  
Thermally Activated ◽  
Native Oxides ◽  
Pulsed Laser Annealing ◽  
Gaas Substrates ◽  
Pulsed Laser Irradiation

ABSTRACTWe have studied the effects of pulsed laser irradiation on silicon implanted, thermally activated , Calcia Stabilized Zirconia (CSZ) capped GaAs substrates. Reference substrates have also been irradiated in air for comparison. CSZ as a solid electrolyte has been used to chemically reduce the GaAs surface native oxides prior to irradiation while maintaining the surface stoechiometry. Our results indicate a spectacular decrease in defect density after laser irradiation of the CSZ capped-native oxide free samples, as compared to the samples irradiated in air.

Amorphous Phase Trapping as a Result of Pulsed Laser Irradiation of Silicon

1983 ◽  
Vol 13 ◽  
Author(s):  
R. F. Wood
Keyword(s):  
Phase Transition ◽  
Laser Irradiation ◽  
Amorphous Phase ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Rate Model ◽  
Kinetic Rate ◽  
Pulsed Laser Annealing ◽  
Thermodynamic Effect ◽  
Pulsed Laser Irradiation

ABSTRACTIt is concluded that large interface undercoolings of ˜ 300 deg are not likely to occur during pulsed laser annealing and that the observed liquid to amorphous phase transition is not a purely thermodynamic effect. It is then shown that the formation of the amorphous phase can be understood on the basis of a kinetic rate model which makes large undercoolings of the interface unnecessary.

Raman Studies of Carrier Activation in Laser Annealed GaAs Capped with Silicon Nitride

1986 ◽  
Vol 74 ◽  
Author(s):  
A. Compaan ◽  
S. C. Abbi ◽  
H. D. Yao ◽  
A. Bhat ◽  
F. Hashmi
Keyword(s):  
Silicon Nitride ◽  
Laser Pulse ◽  
Raman Scattering ◽  
Excimer Laser ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Dye Laser ◽  
Pulsed Laser Annealing ◽  
Wide Range ◽  
Xecl Excimer Laser

AbstractCarrier concentrations exceeding 1019/cm3 in GaAs implanted with Si (2 × 1014/cm2 @ 140 keV) have been obtained by pulsed laser annealing with either a dye laser (λ = 728 nm) or a XeCl excimer laser (λ = 308 nm). Carrier concentrations were measured by plasmon Raman scattering over a wide range of anneal energy densities. Compared with capless laser annealing, much higher carrier activations were achieved when the annealing laser pulse was incident through a Si3N4 cap.

Stress Effects on Raman Measurements of Pulsed Laser Annealed Silicon

1983 ◽  
Vol 23 ◽  
Author(s):  
G. E. Jellison ◽  
R. F. Wood
Keyword(s):  
Raman Scattering ◽  
Laser Irradiation ◽  
Laser Annealing ◽  
Phonon Frequency ◽  
Pulsed Laser ◽  
Front Surface ◽  
Surface Region ◽  
Pulsed Laser Annealing ◽  
Anti Stokes ◽  
Pulsed Laser Irradiation

ABSTRACTIt has recently been shown that the front surface region of the silicon lattice is severely strained during pulsed laser irradiation. This uniaxial strain reduces the symmetry of the front surface region, resulting in additional shifts and splittings of the phonon frequency and changes in the Raman scattering tensor. It is shown that, for the case of pulsed laser irradiation, the phonon frequency is increased, and the 3-fold degenerate optical phonon is split into a singlet and a doublet. The changes in the Raman scattering tensor make it non-symmetric, and generally invalidate the technique used by Compaan et al. to determine the cross section experimentally. The complications introduced by the presence of stress during pulsed laser annealing, coupled with the temperature dependence of the optical and Raman tensors, make a simple interpretation of the Stokes to anti-Stokes ratio in terms of lattice temperature extremely unreliable.

Pulsed-Laser Annealing of Ion-Implanted GaAs: Theory and Exeriment

1980 ◽  
Vol 1 ◽  
Author(s):  
R. F. Wood ◽  
Douglas H. Lowndes ◽  
W. H. Christie
Keyword(s):  
Laser Irradiation ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Surface Melting ◽  
Pulsed Laser Annealing ◽  
Dopant Profile ◽  
Theory And Experiment ◽  
Good Agreement ◽  
Pulsed Laser Irradiation ◽  
Catastrophic Damage

ABSTRACTIt is shown that, in the pulsed-laser irradiation of crystalline or lightly damaged GaAs, good agreement is obtained between measured and calculated thresholds for melting, for catastrophic damage due to vaporization, and for the duration of surface melting at various energy densities. Good agreement between theory and experiment is also obtained for dopant profile spreading during pulsed-laser annealing.

Raman Vibrational Study of Pulsed Laser Annealing of Implanted GaAs

1983 ◽  
Vol 23 ◽  
Author(s):  
J. Sapriel ◽  
Y.I. Nissim
Keyword(s):  
Laser Irradiation ◽  
Raman Spectra ◽  
Ruby Laser ◽  
Laser Annealing ◽  
Pulsed Laser ◽  
Spatially Resolved ◽  
Pulsed Laser Annealing ◽  
Vibrational Study ◽  
Annealing Cycle ◽  
Pulsed Laser Irradiation

ABSTRACTThe lattice reconstruction produced by a pulsed laser irradiation in heavily damaged GaAs layers is studied. Spatially resolved Raman measurements are used to characterize the crystalline quality after the annealing cycle produced by a O-switched Ruby laser or by a picosecond pulsed Nd-YAG laser. The continuous evolution in the Raman spectra is usèd to follow the crystal recovery as a function of the irradiation parameters.

Modification of structural and transport properties in epitaxial YBa2CU3Ox films by pulsed laser irradiation

1993 ◽  
Vol 3 (12) ◽  
pp. 2173-2188
Author(s):  
N. G. Chechenin ◽  
A. V. Chernysh ◽  
V. V. Korneev ◽  
E. V. Monakhov ◽  
B. V. Seleznev
Keyword(s):  
Transport Properties ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Pulsed Laser Irradiation

PULSED LASER IRRADIATION OF NICKEL THIN FILMS ON SILICON

1983 ◽  
Vol 44 (C5) ◽  
pp. C5-449-C5-454 ◽  
Author(s):  
P. Baeri ◽  
M. G. Grimaldi ◽  
E. Rimini ◽  
G. Celotti
Keyword(s):  
Thin Films ◽  
Laser Irradiation ◽  
Pulsed Laser ◽  
Nickel Thin Films ◽  
Pulsed Laser Irradiation

FUNDAMENTALS OF PULSED LASER IRRADIATION OF SILICON

1983 ◽  
Vol 44 (C5) ◽  
pp. C5-23-C5-36 ◽  
Author(s):  
H. Kurz ◽  
L. A. Lompré ◽  
J. M. Liu
Keyword(s):  
Laser Irradiation ◽  
Pulsed Laser ◽  
Pulsed Laser Irradiation
Sign in / Sign up

Export Citation Format

Share Document