Amorphous Phase Trapping as a Result of Pulsed Laser Irradiation of Silicon
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ABSTRACTIt is concluded that large interface undercoolings of ˜ 300 deg are not likely to occur during pulsed laser annealing and that the observed liquid to amorphous phase transition is not a purely thermodynamic effect. It is then shown that the formation of the amorphous phase can be understood on the basis of a kinetic rate model which makes large undercoolings of the interface unnecessary.
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1987 ◽
Vol 56
(2)
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pp. 612-618
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2016 ◽
Vol 247
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pp. 24-29
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