Electronic Transport Properties of Graphite Acceptor Compounds

1982 ◽  
Vol 20 ◽  
Author(s):  
Ian L. Spain ◽  
Kenneth J. Volin
Keyword(s):  
Transport Properties ◽  
Physical Model ◽  
Electronic Transport ◽  
Tight Binding ◽  
Zero Field ◽  
Tight Binding Model ◽  
Binding Model ◽  
Electronic Transport Properties

ABSTRACTCalculations of the magnetoresistance of graphite acceptor compounds are made using a tight binding model for the carrier dispersion proposed by Blinowski et al, and measured values of the zero-field resistivity. It is shown that, if a reasonable physical model is used for the mobilities, the magnetoresistance cannot be fitted with two- or three-carrier models. Suggestions for the origin of the magnetoresistance are made.

scholarly journals Electronic transport properties of fullerene functionalized carbon nanotubes:Ab initioand tight-binding calculations

2009 ◽  
Vol 80 (3) ◽  
Author(s):  
J. A. Fürst ◽  
J. Hashemi ◽  
T. Markussen ◽  
M. Brandbyge ◽  
A. P. Jauho ◽  
...  
Keyword(s):  
Transport Properties ◽  
Electronic Transport ◽  
Tight Binding ◽  
Electronic Transport Properties

scholarly journals QUANTUM TRANSPORT THROUGH SINGLE PHENALENYL MOLECULE: EFFECT OF INTERFACE STRUCTURE

2007 ◽  
Vol 06 (06) ◽  
pp. 415-422 ◽  
Author(s):  
SANTANU K. MAITI
Keyword(s):  
Quantum Transport ◽  
Electronic Transport ◽  
Coupling Strength ◽  
Tight Binding ◽  
Interface Structure ◽  
Function Technique ◽  
Tight Binding Model ◽  
Parametric Approach ◽  
Binding Model ◽  
Molecular Bridge

The electronic transport characteristics through a single phenalenyl molecule sandwiched between two metallic electrodes are investigated by using Green's function technique. A parametric approach, based on the tight-binding model, is used to study the transport characteristics through such molecular bridge system. The electronic transport properties are significantly influenced by (a) the molecule-to-electrodes interface structure and (b) the molecule-to-electrodes coupling strength.

scholarly journals Stacking-enriched magneto-transport properties of few-layer graphenes

2017 ◽  
Vol 19 (43) ◽  
pp. 29525-29533 ◽  
Author(s):  
Thi-Nga Do ◽  
Cheng-Peng Chang ◽  
Po-Hsin Shih ◽  
Jhao-Ying Wu ◽  
Ming-Fa Lin
Keyword(s):  
Transport Properties ◽  
Quantum Hall ◽  
Tight Binding ◽  
Bilayer Graphene ◽  
Tight Binding Model ◽  
Kubo Formula ◽  
Binding Model ◽  
Quantum Hall Effects ◽  
Hall Effects

The quantum Hall effects in sliding bilayer graphene and a AAB-stacked trilayer system are investigated using the Kubo formula and the generalized tight-binding model.

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