scholarly journals Stacking-enriched magneto-transport properties of few-layer graphenes

2017 ◽  
Vol 19 (43) ◽  
pp. 29525-29533 ◽  
Author(s):  
Thi-Nga Do ◽  
Cheng-Peng Chang ◽  
Po-Hsin Shih ◽  
Jhao-Ying Wu ◽  
Ming-Fa Lin
Keyword(s):  
Transport Properties ◽  
Quantum Hall ◽  
Tight Binding ◽  
Bilayer Graphene ◽  
Tight Binding Model ◽  
Kubo Formula ◽  
Binding Model ◽  
Quantum Hall Effects ◽  
Hall Effects

The quantum Hall effects in sliding bilayer graphene and a AAB-stacked trilayer system are investigated using the Kubo formula and the generalized tight-binding model.

scholarly journals QUANTUM FIELD THEORY IN GRAPHENE

2012 ◽  
Vol 27 (15) ◽  
pp. 1260007 ◽  
Author(s):  
I. V. FIALKOVSKY ◽  
D. V. VASSILEVICH
Keyword(s):  
Field Theory ◽  
Quantum Field Theory ◽  
Quantum Hall Effect ◽  
Faraday Effect ◽  
Quantum Hall ◽  
Tight Binding ◽  
Polarization Operator ◽  
Quantum Field ◽  
Tight Binding Model ◽  
Binding Model

This is a short nontechnical introduction to applications of the Quantum Field Theory methods to graphene. We derive the Dirac model from the tight binding model and describe calculations of the polarization operator (conductivity). Later on, we use this quantity to describe the Quantum Hall Effect, light absorption by graphene, the Faraday effect, and the Casimir interaction.

scholarly journals Elastic Deformations and Wigner–Weyl Formalism in Graphene

Symmetry ◽  
2020 ◽  
Vol 12 (2) ◽  
pp. 317 ◽  
Author(s):  
I.V. Fialkovsky ◽  
M.A. Zubkov
Keyword(s):  
Magnetic Field ◽  
Quantum Hall Effect ◽  
Quantum Hall ◽  
Tight Binding ◽  
Tight Binding Model ◽  
Solid State Physics ◽  
Binding Model ◽  
Elastic Deformations ◽  
Binding Models ◽  
External Electromagnetic Fields

We discuss the tight-binding models of solid state physics with the Z 2 sublattice symmetry in the presence of elastic deformations in an important particular case—the tight binding model of graphene. In order to describe the dynamics of electronic quasiparticles, the Wigner–Weyl formalism is explored. It allows the calculation of the two-point Green’s function in the presence of two slowly varying external electromagnetic fields and the inhomogeneous modification of the hopping parameters that result from elastic deformations. The developed formalism allows us to consider the influence of elastic deformations and the variations of magnetic field on the quantum Hall effect.

scholarly journals QUANTUM FIELD THEORY IN GRAPHENE

2012 ◽  
Vol 14 ◽  
pp. 88-99 ◽  
Author(s):  
I. V. FIALKOVSKY ◽  
D. V. VASSILEVICH
Keyword(s):  
Field Theory ◽  
Quantum Field Theory ◽  
Quantum Hall Effect ◽  
Faraday Effect ◽  
Quantum Hall ◽  
Tight Binding ◽  
Polarization Operator ◽  
Quantum Field ◽  
Tight Binding Model ◽  
Binding Model

This is a short non-technical introduction to applications of the Quantum Field Theory methods to graphene. We derive the Dirac model from the tight binding model and describe calculations of the polarization operator (conductivity). Later on, we use this quantity to describe the Quantum Hall Effect, light absorption by graphene, the Faraday effect, and the Casimir interaction.

Transport properties and observation of quantum Hall effects of InAs0.1Sb0.9 thin layers sandwiched between Al0.1In0.9Sb layers

2009 ◽  
Vol 40 (3) ◽  
pp. 592-594 ◽  
Author(s):  
Ichiro Shibasaki ◽  
Hirotaka Geka ◽  
Shuichi Ishida ◽  
Kenichi Oto ◽  
Tomoyuki Ishihara ◽  
...  
Keyword(s):  
Transport Properties ◽  
Quantum Hall ◽  
Thin Layers ◽  
Quantum Hall Effects ◽  
Hall Effects

Electronic Transport Properties of Graphite Acceptor Compounds

1982 ◽  
Vol 20 ◽  
Author(s):  
Ian L. Spain ◽  
Kenneth J. Volin
Keyword(s):  
Transport Properties ◽  
Physical Model ◽  
Electronic Transport ◽  
Tight Binding ◽  
Zero Field ◽  
Tight Binding Model ◽  
Binding Model ◽  
Electronic Transport Properties

ABSTRACTCalculations of the magnetoresistance of graphite acceptor compounds are made using a tight binding model for the carrier dispersion proposed by Blinowski et al, and measured values of the zero-field resistivity. It is shown that, if a reasonable physical model is used for the mobilities, the magnetoresistance cannot be fitted with two- or three-carrier models. Suggestions for the origin of the magnetoresistance are made.

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