Lead Zirconate Titanate Films Produced by Pulsed Laser Deposition

1990 ◽  
Vol 200 ◽  
Author(s):  
K. L. Saenger ◽  
R. A. Roy ◽  
K. F. Etzold ◽  
J. J. Cuomo
Keyword(s):  
Pulsed Laser Deposition ◽  
Lead Zirconate Titanate ◽  
Pulsed Laser ◽  
Lead Zirconate ◽  
Laser Deposition ◽  
X Ray Diffraction ◽  
Electrical Measurements ◽  
Zirconate Titanate ◽  
Pzt Films ◽  
Before And After

ABSTRACTThe synthesis of ferroelectric lead zirconate titanate (PZT) films by pulsed laser deposition at 248 nm is described. This study has focused on producing thin (≲ 0.6μm) PZT films on bare and platinum coated MgO < 100 > substrates. Deposition was in an oxygen gas ambient (30 mTorr) at temperatures typically ∼ 525 °C. Rutherford Backscattering Spectroscopy (RBS) was used to evaluate film composition. Film lead content was found to decrease both with increasing laser fluence, and increasing substrate temperature. Film microstructure was evaluated by x-ray diffraction. Electrical measurements were made on the films before and after annealing to determine the dielectric constant and polarization. Properties after annealing were substantially improved, with dielectric permittivity values comparable to bulk PZT.

Microstructure of Compositionally Graded PZT films Grown by Pulsed Laser Deposition

2008 ◽  
Vol 14 (S3) ◽  
pp. 53-56
Author(s):  
S.A.S. Rodrigues ◽  
A. Khodorov ◽  
M. Pereira ◽  
M.J.M. Gomes
Keyword(s):  
Pulsed Laser Deposition ◽  
Lead Zirconate Titanate ◽  
Film Growth ◽  
Pulsed Laser ◽  
Hysteresis Loops ◽  
Lead Zirconate ◽  
Laser Deposition ◽  
Composition Gradient ◽  
Complex Structures ◽  
Pzt Films

Ferroelectric films with a composition gradient have attracted much attention because of their large polarization offset present in the hysteresis loops. Lead Zirconate Titanate (PZT) films were deposited on Pt/TiO2/SiO2/Si substrates by Pulsed Laser Deposition (PLD) technique, using a Nd:YAG laser (Surelite) with a source pulse wavelength of 1064 nm and duration of 5-7 ns delivering an energy of 320 mJ per pulse and a laser fluence energy about 20 J/cm2. The film growth is performed in O2 atmosphere (0,40 mbar) while the substrate is heated at 600°C by a quartz lamp. Starting from ceramic targets based on PZT compositions and containing 5% mol. of excess of PbO to compensate the lead evaporation during heat treatment, three films with different compositions Zr/Ti 55/45, 65/35 and 92/8, and two types of complex structures were produced. These complex structures are in the case of the up-graded structure (UpG), with PZT (92/8) at the bottom, PZT (65/35) on middle and PZT (55/45) on the top, and for down-graded (DoG) one, that order is reversed.

Anion‐assisted pulsed laser deposition of lead zirconate titanate films

1992 ◽  
Vol 60 (10) ◽  
pp. 1193-1195 ◽  
Author(s):  
R. E. Leuchtner ◽  
K. S. Grabowski ◽  
D. B. Chrisey ◽  
J. S. Horwitz
Keyword(s):  
Pulsed Laser Deposition ◽  
Lead Zirconate Titanate ◽  
Pulsed Laser ◽  
Lead Zirconate ◽  
Laser Deposition ◽  
Zirconate Titanate

Growth and measurements of ferroelectric lead zirconate titanate on diamond by pulsed laser deposition

1999 ◽  
Vol 86 (4) ◽  
pp. 2220-2225 ◽  
Author(s):  
H. Du ◽  
D. W. Johnson ◽  
W. Zhu ◽  
J. E. Graebner ◽  
G. W. Kammlott ◽  
...  
Keyword(s):  
Pulsed Laser Deposition ◽  
Lead Zirconate Titanate ◽  
Pulsed Laser ◽  
Lead Zirconate ◽  
Laser Deposition ◽  
Zirconate Titanate

Hard and Soft Composition Lead Zirconate Titanate Thin Films Deposited by Pulsed Laser Deposition

1996 ◽  
Vol 459 ◽  
Author(s):  
Johanna L. Lacey ◽  
Susan Trolier-McKinstry
Keyword(s):  
Thin Films ◽  
Pulsed Laser Deposition ◽  
Lead Zirconate Titanate ◽  
Biaxial Tension ◽  
Pulsed Laser ◽  
Lead Zirconate ◽  
Dielectric Constants ◽  
Laser Deposition ◽  
Sensors And Actuators ◽  
Zirconate Titanate

ABSTRACTLead zirconate titanate thin films offer considerably larger piezoelectric coefficients than do ZnO, and so are attractive for microelectromechanical sensors and actuators. To date, much of the research in this field has concentrated on undoped PZT. In this work, PZT films grown from both hard and soft PZT targets have been deposited on platinum coated silicon wafers by pulsed laser deposition so that the effect of doping on the properties can be determined. Dielectric constants of 1000–1500 are regularly achieved in both types of films, with loss values varying from 0.01 for soft films to 0.03 for hard films. Remanent polarizations are typically 30 μC/cm2 for both types of films with no observable difference in coercive fields. When subjected to ∼140 MPa of biaxial tension and compression, only small (∼5%) reversible changes were observed, indicating a lack of substantial domain reorientation in the films.

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