Highly Strained (InAs)M/(GaAs)N Multiple Quantum Well Based Resonant Tunneling Diodes on GaAs (100) Substrates and Their Application in Optical Switching

1991 ◽  
Vol 228 ◽  
Author(s):  
R. M. Kapre ◽  
Kezhong Hu ◽  
Li Chen ◽  
S. Guha ◽  
A. Madhukar
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Optical Switching ◽  
Room Temperature ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Bistable Switch ◽  
Tunneling Diode ◽  
Short Period ◽  
Highly Strained

ABSTRACTWe report the realization of (a) an optically bistable switch using a strained resonant tunneling diode (RTD) and (b) highly strained RTDs exhibiting simultaneously high peak current densities (Jp) and peak-to-valley current ratios (PVR) suitable for high-speed electronic switching. Both of these make use of RTDs with (InAs)M/(GaAs)N strained short period multiple quantum well regions with AlAs barriers in a triple-well, double barrier structure. For the former, high contrast ratio (20:1) and an on state reflectivity of 46.5 % has been obtained at room temperature in an optically bistable switch involving a strained InGaAs/GaAs (100) multiple quantum well based asymmetric Fabty-Perot reflection modulator, detector, and a strained RTD and a Si field effect transistor. For the latter, we have obtained a Jp of 125 kA/cm2 with a PVR of 4.7 at room temperature.

RESONANT TUNNELING STUDIES OF VARIABLY SPACED MULTIPLE QUANTUM WELL STRUCTURES IN THE AlGaAs SYSTEM

1987 ◽  
Vol 48 (C5) ◽  
pp. C5-457-C5-461
Author(s):  
C. J. SUMMERS ◽  
K. F. BRENNAN ◽  
A. TORABI ◽  
H. M. HARRIS ◽  
J. COMAS
Keyword(s):  
Quantum Well ◽  
Resonant Tunneling ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Electroabsorption by Stark effect on room‐temperature excitons in GaAs/GaAlAs multiple quantum well structures

1983 ◽  
Vol 42 (10) ◽  
pp. 864-866 ◽  
Author(s):  
D. S. Chemla ◽  
T. C. Damen ◽  
D. A. B. Miller ◽  
A. C. Gossard ◽  
W. Wiegmann
Keyword(s):  
Quantum Well ◽  
Room Temperature ◽  
Stark Effect ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
Quantum Well Structures

Operation Characteristics of a Side-Light-Injection Multiple-Quantum-Well Bistable Laser for All-Optical Switching

1994 ◽  
Vol 33 (Part 1, No. 1B) ◽  
pp. 815-821 ◽  
Author(s):  
Hiroyuki Uenohara ◽  
Yuichi Kawamura ◽  
Hidetoshi Iwamura ◽  
Kouji Nonaka ◽  
Hiroyuki Tsuda ◽  
...  
Keyword(s):  
Quantum Well ◽  
Optical Switching ◽  
Multiple Quantum Well ◽  
Multiple Quantum ◽  
All Optical ◽  
All Optical Switching ◽  
Operation Characteristics

In Situ Flux Transient Monitoring and Correction During MBE Growth of Quantum Well Structures

1993 ◽  
Vol 300 ◽  
Author(s):  
F. G. Celii ◽  
Y.-C. Kao ◽  
A. J. Katz
Keyword(s):  
Quantum Well ◽  
Multiple Quantum Well ◽  
Effusion Cell ◽  
Multiple Quantum ◽  
Group V ◽  
Quantum Well Structures ◽  
Group Iii ◽  
Tunneling Diode ◽  
Partial Pressures

ABSTRACTShutter closure during MBE deposition causes source overheating and results in flux transients. These transients are particularly detrimental to the thickness and compositional accuracy of thin quantum well layers. In this paper, we document the effects of flux transients on growth of multiple quantum well (MQW) and resonant tunneling diode (RTD) structures, and demonstrate rudimentary transient correction by employing real-time flux detection.Reflection mass spectrometry (REMS) provides a convenient in situ method for MBE flux monitoring. The Group III partial pressures can be detected in the presence of Group V overpressure, and REMS is compatible with wafer rotation. We used REMS to characterize In, Al and Ga flux transients as a function of shutter closed time, cell flux and substrate temperature. Overshoot magnitudes up to 30% were observed. We verified the correspondence of REMS signal transients and effusion cell flux transients using GaAs/AlGaAs and InGaAs/lnAlAs MQW and test structures. We also successfully demonstrated flux transient correction by cell temperature ramping during MQW and RTD growth.

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