Microstructural Characterization of Epitaxial Bottom Electrodes, Buffered Layers, and Ferroelectric thin Films

1991 ◽  
Vol 243 ◽  
Author(s):  
Shang Hsien Rou ◽  
T. M. Graettinger ◽  
A. F. Chow ◽  
C. N. Soble ◽  
D. J. Lichtenwalner ◽  
...  
Keyword(s):  
Thin Films ◽  
Ion Beam ◽  
Sol Gel ◽  
Microstructural Characterization ◽  
Epitaxial Films ◽  
Ferroelectric Thin Films ◽  
Buffer Layers ◽  
Amorphous Films ◽  
Multilayered Films

AbstractThree subjects are covered in this paper. First, a set of criteria are established to explain how epitaxial growth can be achieved for sol-gel processed ferroelectric thin films. These criteria describe the conversion of amorphous films to epitaxial films. Second, we report the microstructures of ion beam sputtered buffer layers, (100) MgO on (100) Si, and epitaxial bottom electrodes, (100) Pt on (100) MgO and (111) Pt on (0001) A12O3, for the integration of ferroelectric films with various types of substrates. Third, microstructures of the multilayered epitaxial films, (001) YBa2Cu307-δ on (100) KNbO3/(100) MgO and (100) KNbO3 on (100) MgO/(100) Si, are characterized. The results indicate that high quality epitaxial multilayered films can be obtained under the proper processing conditions.

Preparation and Characterization of Novel Lithium Tantalate Target

2011 ◽  
Vol 117-119 ◽  
pp. 840-844
Author(s):  
Xu Yong Wu ◽  
De Yin Zhang ◽  
Kun Li
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
High Temperature ◽  
Ion Beam ◽  
Sol Gel ◽  
Lithium Tantalate ◽  
Lithium Oxide ◽  
The Novel ◽  
Sol Gel Process

The novel lithium enriched lithium tantalate (LiTaO3) targets were papered by employing the sol-gel process and the high temperature sintered process. The sol of LiTaO3 was firstly prepared through reacting lithium ethoxide with tantalum ethoxide. The LiTaO3 powder was fabricated by presintered LiTaO3 dry gel 4 hour, at 800°C. The 11cm13cm1cm lithium enriched LiTaO3 target samples were prepared by sintered the pressed LiTaO3 powder billet 4 hour in the 850°C muffle furnace. The density of the 5% overdose lithium enriched LiTaO3 target is measured 5.96g/cm3. The XRD measured results show that the ion beam enhanced deposited (IBED) thin film samples using the prepared 5% overdose lithium enriched LiTaO3 target have the polycrystal structure of LiTaO3, but there has remanent Ta2O5 existed in the IBED thin film samples. The main reason for the remanent Ta2O5 growth was due to the stoichiometric proportion mismatch between Li and Ta in the IBED thin film samples during the high temperature annealed process, which caused the lithium oxide evaporation loss from the IBED thin film samples and made the proportion of Ta2O5 increase. After multipule repeated target prepared experiments, the 8.76% overdose lithium enriched LiTaO3 target is suitable for fabricating the 550°C annealed IBED LiTaO3 thin film. After the repeated process experiments, the suitable deposited process parameters of the IBED-C600M instrument for the 8.76% overdose lithium enriched LiTaO3 target were obtained. The SEM micrographs of the 550°C annealed IBED LiTaO3 thin films prepared by the 8.76% overdose lithium enriched LiTaO3 target reveal the prepared thin films are uniform, smooth and crack-free on the surface, and the perfect adhesion between the thin film and the substrate. The successfully fabricated LiTaO3 thin film samples verify the prepared processes of novel LiTaO3 sputtering target are effective.

Microstructural characterization of sol–gel lead–zirconate–titanate thin films

1998 ◽  
Vol 83 (4) ◽  
pp. 2202-2208 ◽  
Author(s):  
S. A. Impey ◽  
Z. Huang ◽  
A. Patel ◽  
R. Beanland ◽  
N. M. Shorrocks ◽  
...  
Keyword(s):  
Thin Films ◽  
Lead Zirconate Titanate ◽  
Sol Gel ◽  
Microstructural Characterization ◽  
Lead Zirconate ◽  
Zirconate Titanate

Preparation and characterization of sol–gel derived (Li,Ta,Sb) modified (K,Na)NbO3 lead-free ferroelectric thin films

2011 ◽  
Vol 130 (1-2) ◽  
pp. 165-169 ◽  
Author(s):  
Li Wang ◽  
Ruzhong Zuo ◽  
Longdong Liu ◽  
Hailin Su ◽  
Min Shi ◽  
...  
Keyword(s):  
Thin Films ◽  
Sol Gel ◽  
Ferroelectric Thin Films ◽  
Lead Free

Microstructural Characterization Of The Pd-Ge Ohmic Contact On Gaas By Cross-Sectional Transmission Electron Microscopy (Tem)

1999 ◽  
Vol 5 (S2) ◽  
pp. 158-159
Author(s):  
F. Radulescu ◽  
J.M. McCarthy
Keyword(s):  
Thin Films ◽  
Solid State ◽  
Gaas Substrate ◽  
Ion Beam ◽  
Microstructural Characterization ◽  
Solid State Reactions ◽  
Specimen Preparation ◽  
Cross Sectional ◽  
Metal Thin Films

In the last decade, Pd-Ge contact system emerged as the most promising replacement of the Au-Ni-Ge alloy, still used by most of today's GaAs technology. Its better electrical properties stem from the fact that contact formation is based on a series of solid state reactions without any melting of the metal thin films and the GaAs substrate taking place during annealing. Research studies by E.D. Marshall et al. (1) demonstrated that thermally stable contacts with low resistivities could be achieved by low temperature annealing of Pd and Ge thin films. Their studies also revealed that the excess Ge is regrown on top of the GaAs substrate by a solid state epitaxy mechanism.Typical TEM cross-sectional specimen preparation techniques limit the electron transparent area and make the global characterization of the contact difficult. In this study, we employed a focus ion beam (FEB) method as described by Bassile et al.(2), which allowed us to observe a minimum of 4 microns of the interface cross section in each of the specimens examined.

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