Microstructural Characterization of Ferroelectric Thin Films in Transverse Section

AbstractThree subjects are covered in this paper. First, a set of criteria are established to explain how epitaxial growth can be achieved for sol-gel processed ferroelectric thin films. These criteria describe the conversion of amorphous films to epitaxial films. Second, we report the microstructures of ion beam sputtered buffer layers, (100) MgO on (100) Si, and epitaxial bottom electrodes, (100) Pt on (100) MgO and (111) Pt on (0001) A12O3, for the integration of ferroelectric films with various types of substrates. Third, microstructures of the multilayered epitaxial films, (001) YBa2Cu307-δ on (100) KNbO3/(100) MgO and (100) KNbO3 on (100) MgO/(100) Si, are characterized. The results indicate that high quality epitaxial multilayered films can be obtained under the proper processing conditions.

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Synthesis and Microstructural Characterization of SnO2:F Thin Films Deposited by AACVD

Materials Research ◽

10.1590/1980-5373-mr-2016-0350 ◽

2016 ◽

Vol 19 (suppl 1) ◽

pp. 97-102 ◽

Cited By ~ 13

Author(s):

Karen Alejandra Chavarría-Castillo ◽

Patricia Amézaga-Madrid ◽

Oswaldo Esquivel-Pereyra ◽

Wilber Antúnez-Flores ◽

Pedro Pizá Ruiz ◽

...

Keyword(s):

Thin Films ◽

Microstructural Characterization

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Electrochemical deposition and microstructural characterization of AlCrFeMnNi and AlCrCuFeMnNi high entropy alloy thin films

Applied Surface Science ◽

10.1016/j.apsusc.2015.07.142 ◽

2015 ◽

Vol 358 ◽

pp. 533-539 ◽

Cited By ~ 29

Author(s):

V. Soare ◽

M. Burada ◽

I. Constantin ◽

D. Mitrică ◽

V. Bădiliţă ◽

...

Keyword(s):

Thin Films ◽

Electrochemical Deposition ◽

Microstructural Characterization ◽

High Entropy Alloy ◽

High Entropy

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Preparation and Characterization of Pb-Based Ferroelectric Thin Films

Japanese Journal of Applied Physics ◽

10.1143/jjap.30.2186 ◽

1991 ◽

Vol 30 (Part 1, No. 9B) ◽

pp. 2186-2188 ◽

Cited By ~ 8

Author(s):

Shigenori Hayashi ◽

Kenji Iijima ◽

Takashi Hirao

Keyword(s):

Thin Films ◽

Ferroelectric Thin Films

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Preparation and microstructural characterization of oriented titanosilicate ETS-10 thin films on indium tin oxide surfaces

Microporous and Mesoporous Materials ◽

10.1016/j.micromeso.2010.02.001 ◽

2010 ◽

Vol 131 (1-3) ◽

pp. 401-406 ◽

Cited By ~ 6

Author(s):

Sezin Galioğlu ◽

Mariam N. Ismail ◽

Juliusz Warzywoda ◽

Albert Sacco ◽

Burcu Akata

Keyword(s):

Thin Films ◽

Tin Oxide ◽

Indium Tin Oxide ◽

Microstructural Characterization ◽

Oxide Surfaces

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Preparation and Characterization of MFM and MFIS Structures Using Sr2(Ta1划x, Nbx)2O7 Thin Film by Pulsed Laser Deposition

MRS Proceedings ◽

10.1557/proc-655-cc3.5.1 ◽

2000 ◽

Vol 655 ◽

Cited By ~ 1

Author(s):

Masanori Okuyama ◽

Toshiyuki Nakaiso ◽

Minoru Noda

Keyword(s):

Thin Film ◽

Thin Films ◽

Pulsed Laser Deposition ◽

Pulsed Laser ◽

Ferroelectric Thin Films ◽

Laser Deposition ◽

Polarization Reversal ◽

Ambient Gas ◽

Mfis Structure

AbstractSr2(Ta1划x, Nbx)2O7(STN) ferroelectric thin films have been prepared on SiO2/Si(100) substrates by the pulsed laser deposition (PLD) method. Preferential (110) and (151)-oriented STN thin films are deposited at a low temperature of 600°C in N2O ambient gas at 0.08 Torr. A counterclockwise C-V hysteresis was observed in the metal-ferroelectric-insulator-semiconductor (MFIS) structure using Sr2(Ta0.7, Nb0.3)2O7 on SiO2/Si deposited at 600°C. Memory window in the C-V curve spreads symmetrically towards both positive and negative directions when applied voltage increases and the window does not change in sweep rates ranging from 0.1 to 4.0×103 V/s. The C-V curve of the MFIS structure does not degrade after 1010 cycles of polarization reversal. The gate retention time is about 3.0×103 sec when the voltages and time of write pulse are ±15V and 1.0 sec, respectively, and hold bias was -0.5 V.

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