Ion Mixing Kinetics of Thin Layered Films in the Fe-Al System

ABSTRACTEvaporated bilayers and multilayers of Fe and Al have been studied during ion beam mixing with Xe ions using in-situ electrical resistivity measurements. Experiments have been performed in the composition range 40 – 58 at.% Al and at both temperatures 77 K and 300 K. A semi-empirical model is proposed to explain the observed kinetics. At low doses, a square root dependence of the mixed volume fraction on dose is found at 77 K but not at 300 K. The results are discussed by comparison with the different models proposed for ion beam mixing.

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Ion-beam mixing kinetics of Fe-Al multilayers studied by in situ electrical resistivity measurements

Applied Physics A Solids and Surface ◽

10.1007/bf00617611 ◽

1984 ◽

Vol 33 (2) ◽

pp. 77-82 ◽

Cited By ~ 24

Author(s):

J. P. Rivi�re ◽

J. Delafond ◽

C. Jaouen ◽

A. Bellara ◽

J. F. Dinhut

Keyword(s):

Electrical Resistivity ◽

Ion Beam ◽

Ion Beam Mixing ◽

Resistivity Measurements ◽

Kinetics Of

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Electrical Resistivity of Multilayers During Ion Beam Mixing

MRS Proceedings ◽

10.1557/proc-27-67 ◽

1983 ◽

Vol 27 ◽

Author(s):

J. Grilhe ◽

J.P. Riviere ◽

J. Delafond ◽

C. Jaouen ◽

C. Templier

Keyword(s):

Electrical Resistivity ◽

Volume Fraction ◽

Ion Beam ◽

Conduction Model ◽

Ion Beam Mixing ◽

New Approach ◽

Saturation Process ◽

Resistivity Measurements ◽

Metal Metal

ABSTRACTA new approach is developed, employing “in situ” electrical resistivity measurements, as a tool to study ion beam mixing of evaporated metal-metal multi or bilayers. The electrical resistivity variations measured continuously during the ion bombardment exhibit a monotonical increase and a tendency toward a saturation process allowing to detect precisely the total mixing of the film. The volume fraction of intermixed atoms can be determined within the framework of a simple conduction model. Experimental results are given in the case of Fe-Al and Al-Ag multilayers.

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Monitoring the kinetics of the γ’ phase in the N18 superalloy using in situ electrical resistivity measurements

Journal of Alloys and Compounds ◽

10.1016/j.jallcom.2020.154108 ◽

2020 ◽

Vol 825 ◽

pp. 154108

Author(s):

I.-E. Benrabah ◽

G. Altinkurt ◽

M. Fèvre ◽

M. Dehmas ◽

B. Denand ◽

...

Keyword(s):

Electrical Resistivity ◽

Resistivity Measurements ◽

Kinetics Of

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Amorphization Kinetics of Zr (Cr,Fe)2 Under Ion Irradiation

MRS Proceedings ◽

10.1557/proc-279-517 ◽

1992 ◽

Vol 279 ◽

Cited By ~ 4

Author(s):

A. T. Motta ◽

L. M. Howe ◽

P. R. Okamoto

Keyword(s):

Neutron Irradiation ◽

Ion Irradiation ◽

Ion Beam ◽

National Laboratory ◽

Argonne National Laboratory ◽

Matrix Interface ◽

Thin Foils ◽

Intermetallic Precipitates ◽

Kinetics Of

ABSTRACTThin foils of Zircaloy-4 were irradiated with 350 KeV 40Ar ions in the dual ion beam/HVEM facility at Argonne National Laboratory at 300 – 650 K. The irradiation-induced araorphization of the intermetallic precipitates Zr (Cr, Fe)2 and Zr2 (Ni, Fe) was studied in situ. For Zr (Cr,Fe)2 precipitates the dose-to-amorphization was found to increase exponentially with temperature, with a critical temperature of about 650 K. The amorphization morphology was shown to be homogeneous, with no preferential site for nucleation, in contrast to neutron-irradiation amorphization which started at the precipitate-matrix interface. For Zr2 (Ni,Fe) precipitates it was found that amorphization occurred at 550 K and 600 K, whereas in neutron irradiation no amorphization has been observed at those temperatures. The results are discussed in the context of the previous experimental results of neutron and electron irradiation and likely amorphization mechanisms are proposed.

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Ion-beam mixing of Ni/Pd layers: I. Cascade mixing regime (low temperature)

Journal of Materials Research ◽

10.1557/jmr.1988.1057 ◽

1988 ◽

Vol 3 (6) ◽

pp. 1057-1062 ◽

Cited By ~ 14

Author(s):

U. G. Akano ◽

D. A. Thompson ◽

J. A. Davies ◽

W. W. Smeltzer

Keyword(s):

Thin Film ◽

Ion Beam ◽

Heavy Ion ◽

Square Root ◽

Ion Beam Mixing ◽

Dose Comparison ◽

Mixing Regime ◽

Constant Dose ◽

Constant Dose Rate

A tomic mixing resulting from heavy-ion bombardment of thin-film Ni/Pd bilayers and thin Pd markers sandwiched between Ni layers has been investigated. Mixing experiments were performed over a temperature range 40–473 K, using 120 keV Ar+ and 145 keV Kr+ ions at a constant dose rate of 5.5 × 1012 ions cm −2s−1 for doses up to 4 × 1016cm−2. The resulting interdiffusion was measured, in situ, using Rutherford backscattering with 2−2.8 MeV 4He+ ions. The results showed that, for both markers and bilayers, the amount of mixing is similar for both configurations and varies linearly with the square root of the ion dose. Comparison of the induced mixing per ion, following irradiation at 40 K, shows that the mixing is dependent on the damage energy FD deposited at the interface region. The mixing is essentially athermal.

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Kinetics of non-equililbrium phases formation by ion beam mixing in Au-Ge bilayers

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/0168-583x(85)90431-8 ◽

1985 ◽

Vol 7-8 ◽

pp. 552-555 ◽

Cited By ~ 9

Author(s):

L. Torrisi ◽

S.U. Campisano ◽

Chu Te-Chang ◽

A. Trovato ◽

E. Rimini

Keyword(s):

Ion Beam ◽

Ion Beam Mixing ◽

Kinetics Of

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A comparison of ion beam induced atomic mixing kinetics of Ti/Si, Fe/Si, and Ni/Si systems. In situ electrical resistance and RBS measurements

phys stat sol (a) ◽

10.1002/pssa.2211180216 ◽

1990 ◽

Vol 118 (2) ◽

pp. 467-472 ◽

Cited By ~ 1

Author(s):

K. A. Al-Saleh ◽

I. J. Jabr ◽

N. S. Saleh

Keyword(s):

Electrical Resistance ◽

Ion Beam ◽

Atomic Mixing ◽

Kinetics Of

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Amorphous Alloy Formation in Immiscible Cu-Ta and Cu-W Systems by Atomistic Modeling and Ion-Beam Mixing

MRS Proceedings ◽

10.1557/proc-806-mm5.14 ◽

2003 ◽

Vol 806 ◽

Cited By ~ 3

Author(s):

H. R. Gong ◽

L. T. Kong ◽

B. X. Liu

Keyword(s):

Amorphous Alloys ◽

Composition Range ◽

Ion Beam ◽

Alloy Formation ◽

Atomistic Modeling ◽

Ion Beam Mixing ◽

Embedded Atom ◽

Multilayered Sample ◽

Critical Composition ◽

Dynamics Simulations

ABSTRACTFor the immiscible Cu-Ta and Cu-W systems, realistic n-body potentials are derived under an embedded-atom method through fitting the cross potentials to some physical properties obtained from ab initio calculations for a few possible metastable Cu-Ta and Cu-W crystalline phases, respectively. Based on the derived potentials, molecular dynamics simulations reveal that in the Cu-Ta system, 30 at. % of Ta in Cu is the critical composition for the crystal-to-amorphous transition in the Cu-rich Cu-Ta solid solutions, and that in the Cu-W system, amorphous alloys can be formed within the composition range of 20–65 at. % of W. Interestingly, amorphous alloys are indeed obtained by ion-beam mixing in properly designed Cu70Ta 30, Cu65Ta35, Cu60Ta 40, and Cu50Ta 50 multilayered films, while crystalline Cu and Ta remain in Cu75Ta25 multilayered sample, which matches well with the critical composition of 30 at. % of Ta predicted by simulation. Moreover, there have been experimental data, which are in support of the predicted composition range of the Cu-W system by simulations.

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