A comparison of ion beam induced atomic mixing kinetics of Ti/Si, Fe/Si, and Ni/Si systems. In situ electrical resistance and RBS measurements

1990 ◽  
Vol 118 (2) ◽  
pp. 467-472 ◽  
Author(s):  
K. A. Al-Saleh ◽  
I. J. Jabr ◽  
N. S. Saleh
Keyword(s):  
Electrical Resistance ◽  
Ion Beam ◽  
Atomic Mixing ◽  
Kinetics Of

Ion Beam Induced Interfacial Reactions in Molybdenum Thin Films on Silicon

1981 ◽  
Vol 39 ◽  
pp. 162-163
Author(s):  
L. J. Chen ◽  
L. S. Hung ◽  
J. W. Mayer
Keyword(s):  
Ion Beam ◽  
Chemical Vapor ◽  
Interfacial Reactions ◽  
Practical Applications ◽  
Microelectronic Devices ◽  
Recent Emergence ◽  
Chemical Vapor Deposited ◽  
Atomic Mixing ◽  
Silicon Interface ◽  
Kinetics Of

When an energetic ion penetrates through an interface between a thin film (of species A) and a substrate (of species B), ion induced atomic mixing may result in an intermixed region (which contains A and B) near the interface. Most ion beam mixing experiments have been directed toward metal-silicon systems, silicide phases are generally obtained, and they are the same as those formed by thermal treatment.Recent emergence of silicide compound as contact material in silicon microelectronic devices is mainly due to the superiority of the silicide-silicon interface in terms of uniformity and thermal stability. It is of great interest to understand the kinetics of the interfacial reactions to provide insights into the nature of ion beam-solid interactions as well as to explore its practical applications in device technology.About 500 Å thick molybdenum was chemical vapor deposited in hydrogen ambient on (001) n-type silicon wafer with substrate temperature maintained at 650-700°C. Samples were supplied by D. M. Brown of General Electric Research & Development Laboratory, Schenectady, NY.

Amorphization Kinetics of Zr (Cr,Fe)2 Under Ion Irradiation

1992 ◽  
Vol 279 ◽  
Author(s):  
A. T. Motta ◽  
L. M. Howe ◽  
P. R. Okamoto
Keyword(s):  
Neutron Irradiation ◽  
Ion Irradiation ◽  
Ion Beam ◽  
National Laboratory ◽  
Argonne National Laboratory ◽  
Matrix Interface ◽  
Thin Foils ◽  
Intermetallic Precipitates ◽  
Kinetics Of

ABSTRACTThin foils of Zircaloy-4 were irradiated with 350 KeV 40Ar ions in the dual ion beam/HVEM facility at Argonne National Laboratory at 300 – 650 K. The irradiation-induced araorphization of the intermetallic precipitates Zr (Cr, Fe)2 and Zr2 (Ni, Fe) was studied in situ. For Zr (Cr,Fe)2 precipitates the dose-to-amorphization was found to increase exponentially with temperature, with a critical temperature of about 650 K. The amorphization morphology was shown to be homogeneous, with no preferential site for nucleation, in contrast to neutron-irradiation amorphization which started at the precipitate-matrix interface. For Zr2 (Ni,Fe) precipitates it was found that amorphization occurred at 550 K and 600 K, whereas in neutron irradiation no amorphization has been observed at those temperatures. The results are discussed in the context of the previous experimental results of neutron and electron irradiation and likely amorphization mechanisms are proposed.

Ion-beam mixing of Ni/Pd layers: II. Thermally assisted regime (>500K)

1988 ◽  
Vol 3 (6) ◽  
pp. 1063-1071 ◽  
Author(s):  
U. G. Akano ◽  
D. A. Thompson ◽  
W. W. Smeltzer ◽  
J. A. Davies
Keyword(s):  
Grain Boundary ◽  
Ion Irradiation ◽  
Ion Beam ◽  
Effective Diffusivity ◽  
Bilayer Films ◽  
Diffusion Analysis ◽  
The Mean ◽  
Atomic Mixing ◽  
Lattice Diffusivity

Atomic mixing in Ni/Pd bilayer films due to 120 keV Ar+ irradiation in the thermally assisted regime (523−673 K) has been measured, in situ, using Rutherford backscattering with 2.0 MeV 4He+ ions. The mean diameter of grains in these polycrystallinc films increased from 10 to 60 nm, following Ar+ bombardment at 573 K. Initial mixing was rapid due to grain boundary diffusion and incorporation of the metal solute into the solvent metal matrix by grain growth; this mixing stage was essentially complete within 10 min for annealed films or after an Ar+ dose of 4 × 1015 cm−2 in irradiated films (10 min irradiation). No further measurable mixing occurred in the annealed, unirradiated films. For the irradiated samples the initial rapid mixing (6−35 atoms/ion) was followed by a slower mixing stage of 0.7–1.8 atoms/ion for irradiation doses of up to 2.5 × 1016 Ar+ cm−2. The Ar+ bombardment gave rise to much smaller mixing levels when the Pd films were deposited on large-grain or single-crystal Ni. A diffusion analysis demonstrates that the effective diffusivity, Deff, for ion-irradiation-enhanced mixing in the thermally assisted regime satisfied the relation Dl < Deff < DB, where the ratio of the grain boundary to lattice diffusivity was DB/Dl > 106.

Ion Mixing Kinetics of Thin Layered Films in the Fe-Al System

1983 ◽  
Vol 27 ◽  
Author(s):  
J. Grilhe ◽  
J.P. Riviere ◽  
J. Delafond ◽  
C. Jaouen
Keyword(s):  
Composition Range ◽  
Volume Fraction ◽  
Ion Beam ◽  
Mixed Volume ◽  
Low Doses ◽  
Ion Beam Mixing ◽  
Resistivity Measurements ◽  
Semi Empirical ◽  
Kinetics Of

ABSTRACTEvaporated bilayers and multilayers of Fe and Al have been studied during ion beam mixing with Xe ions using in-situ electrical resistivity measurements. Experiments have been performed in the composition range 40 – 58 at.% Al and at both temperatures 77 K and 300 K. A semi-empirical model is proposed to explain the observed kinetics. At low doses, a square root dependence of the mixed volume fraction on dose is found at 77 K but not at 300 K. The results are discussed by comparison with the different models proposed for ion beam mixing.

Temperature Dependence of Ion Beam Mixing in Al

1981 ◽  
Vol 7 ◽  
Author(s):  
S.T. Picraux ◽  
D. M. Follstaedt ◽  
J. Delafond
Keyword(s):  
Low Temperatures ◽  
Driving Forces ◽  
Ion Beam ◽  
Slow Motion ◽  
Ion Beam Mixing ◽  
Depth Profiles ◽  
Mixing Rates ◽  
Atomic Mixing ◽  
Concentration Depth Profiles

ABSTRACTThe atomic mixing of evaporated Al/Sb films and of Al/Ag films on Al<110> crystal substrates by 400 keV Xe ion beams has been investigated. Concentration depth profiles were measured in situ by 1.5 MeV He scattering as a function of Xe fluence from 2 to 32×1015 Xe/cm2. The initial mixing rates are similar at 85 and 300 K; mixing proceeds by rapid motion of Al (≈15 Al/Xe) into and uniformly through the thickness of the Sb film and by a slow motion of Sb (≈0.5 Sb/Xe) into the Al<110> substrate. More rapid Sb mixing into Al occurs for polycrystalline Al. The rate for Al into Sb slows at concentrations approaching the stable AlSb phase. Appreciably higher rates of Sb mixing into Al (2.2 to 2.8 Sb/Xe) occur at 575 K. Mixing rates for the highly soluble system, Al/Ag, are compared to the nearly insoluble Al/Sb at 85 and 300 K. Appreciably higher rates are found for Ag than for Sb, suggesting the influence of chemical driving forces even at these low temperatures.

Ion-beam mixing kinetics of Fe-Al multilayers studied by in situ electrical resistivity measurements

1984 ◽  
Vol 33 (2) ◽  
pp. 77-82 ◽  
Author(s):  
J. P. Rivi�re ◽  
J. Delafond ◽  
C. Jaouen ◽  
A. Bellara ◽  
J. F. Dinhut
Keyword(s):  
Electrical Resistivity ◽  
Ion Beam ◽  
Ion Beam Mixing ◽  
Resistivity Measurements ◽  
Kinetics Of

DECOMPOSITION KINETICS OF Cu-10aT%Co ALLOY STUDIED BY IN-SITU ELECTRICAL RESISTANCE MEASUREMENT

2002 ◽  
Vol 16 (01n02) ◽  
pp. 137-143
Author(s):  
P. PENG ◽  
Z. H. JIN ◽  
K. LU ◽  
Z. Q. HU
Keyword(s):  
Electrical Resistance ◽  
Measurement Method ◽  
Resistance Measurement ◽  
Aged Alloy ◽  
Electrical Resistance Measurement ◽  
X Ray Diffraction ◽  
Decomposition Processes ◽  
Rapidly Solidified ◽  
Kinetics Of

The spinodal decomposition processes in the rapidly solidified Cu-10aT%Co alloy aged at several temperatures have been investigated using an in-situ electrical resistance measurement method combining a slowly scanning x-ray diffraction technique. Based on the Cahn-Hilliard theory, the time-dependences of amplification factor of the concentration modulation R(β) at different aging temperatures were calculated, and the Co atomic concentration of Co-rich region and Co-depleted region in the aged alloy were also deduced. The results showed that the evolution of composition modulation in microstructure in Cu-10aT%Co alloy can be monitored and characterized by an in-situ electrical resistance measurement method if only the degree of phase decomposition at some aging temperature and aging time had been previously deteced.

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