Crystallization Behavior and Electrical Properties of Wet-Chemically Deposited Lead Zirconate Titanate Thin Films

1993 ◽  
Vol 310 ◽  
Author(s):  
S. Merklein ◽  
D. Sporn ◽  
A. SchÖnecker

AbstractA wet chemical deposition process for smooth and crackfree films in the system Pb(Zr 1-x Tix)O3 (PZT) has been developed. Final film thicknesses, reached with one coating step, were in the region of 1 μm. Starting from lead acetate trihydrate, zirconium- and titanium-n-propoxide, high molarity (> 2M) coating sols have been prepared that could be handled in air and were stable for more than 170 days.Films with compositions near the morphotropic phase boundary (x=47) and various lead contents were deposited on Pt-coated Si-wafers and Al2O3-substrates by a spin-on method. Wet films could be pyrolyzed and densified with a fast heat treatment without cracking. The crystallization of films into the desired perovskite structure started at comparatively low temperatures (ca. 530 °C) and proceeded rapidly at temperatures above 650 °C. A slight molar excess of lead and a proper heating rate were found to produce films with the best electrical properties. The films on platinized A12O3 substrates showed device-worthy dielectric and ferroelectric properties with typical values for Pn, EC, and ε, of 24 μC/cm2, 4.5 KV/mm and 650, respectively.

2002 ◽  
Vol 748 ◽  
Author(s):  
Takashi Iijima ◽  
Sachiko Ito ◽  
Hirofumi Matsuda

ABSTRACTEffects on ferroelectric and piezoelectric properties of top-electrode diameter variance from 80 to 8 μm were investigated using an AFM probing system connected with a ferroelectric test system with bipolar and unipolar signals at 5 Hz. The Pt and 1.2-μm-thick PZT layers were etched off to prepare Pt top electrode etched samples or Pt/PZT stack etched samples. In the case of bipolar measurement, the top electrode diameter did not affect ferroelectric properties, while the maximum displacement of the butterfly-shaped hysteresis curve, related with piezoelectric response, increased with decreasing top-electrode diameter. On the other hand, the longitudinal piezoelectric constant, AFM d33, calculated from the strain curve slope at 5 Hz, +5 V, increased with decreasing top-electrode diameter. The average value of the Pt/PZT stack-etched AFM d33 almost equals that of Pt-etched AFM d33. Average AFM d33 of the 8-μm-diameter Pt-etched and Pt/PZT stack-etched samples are 129 and 135 pm/V, respectively.


2010 ◽  
Vol 25 (2) ◽  
pp. 240-247 ◽  
Author(s):  
Mirva Eriksson ◽  
Haixue Yan ◽  
Mats Nygren ◽  
Mike J. Reece ◽  
Zhijian Shen

There is a concerted effort to develop lead-free piezoelectric ceramics. (Na0.5K0.5)NbO3-based ceramics have good electrical properties, and are a potential replacement material for lead zirconate titanate piezoelectric ceramics. In this work a commercial powder based on (Na0.5K0.5)NbO3 with an initial particle size of ∼260 nm was consolidated by spark plasma sintering (SPS). To avoid volatilization, high mechanical pressures were used to minimize the densification temperature. It was found that under a uniaxial pressure of 100 MPa, fully densified compacts can be prepared at 850 °C. Ceramics densified at such a low temperature demonstrate an unusually high remanent polarization (30 μC/cm2) and high d33 (146 pC/N). The improved ferroelectric properties are ascribed to the homogeneous, dense, and submicron grained microstructure achieved.


2004 ◽  
Vol 830 ◽  
Author(s):  
Hiroshi Nakaki ◽  
Hiroshi Uchida ◽  
Shoji Okamoto ◽  
Shintaro Yokoyama ◽  
Hiroshi Funakubo ◽  
...  

ABSTRACTRare-earth-substituted tetragonal lead zirconate titanate thin films were synthesized for improving the ferroelectric property of conventional lead zirconate titanate. Thin films of Pb1.00REx (Zr0.40Ti0.60)1-(3x /4)O3 (x = 0.02, RE = Y, Dy, Er and Yb) were deposited on (111)Pt/Ti/SiO2/(100)Si substrates by a chemical solution deposition (CSD). B-site substitution using rare-earth cations described above enhanced the crystal anisotropy, i.e., ratio of PZT lattice parameters c/a. Remanent polarization (Pr) of PZT film was enhanced by Y3+-, Dy3+- and Er3+-substitution from 20 μC/cm2 up to 26, 25 and 26 μC/cm2 respectively, while ion substitution using Yb3+ degraded the Pr value down to 16 μC/cm2. These films had similar coercive fields (Ec) of around 100 kV/cm. Improving the ferroelectric property of PZT film by rare-earth-substitution would be ascribed to the enhancement of the crystal anisotropy. We concluded that ion substitution using some rare-earth cations, such as Y3+, Dy3+ or Er3+, is one of promising technique for improving the ferroelectric property of PZT film.


1991 ◽  
Vol 58 (25) ◽  
pp. 2910-2912 ◽  
Author(s):  
Hideo Kidoh ◽  
Toshio Ogawa ◽  
Akiharu Morimoto ◽  
Tatsuo Shimizu

2009 ◽  
Vol 18 (6) ◽  
pp. 2596-2602 ◽  
Author(s):  
Wang Da-Wei ◽  
Zhang De-Qing ◽  
Yuan Jie ◽  
Zhao Quan-Liang ◽  
Liu Hong-Mei ◽  
...  

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