Crystal Growth and Scintillation Properties of CeF3

1994 ◽  
Vol 348 ◽  
Author(s):  
J.L. Allain ◽  
M. Couchaud ◽  
B. Ferrand ◽  
Y. Grange ◽  
B. Utts ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Single Crystals ◽  
Radiation Hardness ◽  
Bridgman Technique ◽  
Vertical Bridgman

ABSTRACTLarge single crystals of CeF3, 40 mm in diameter up to 140 mm in length, have been grown using the vertical Bridgman technique. Their optical and scintillation properties and their radiation hardness have been measured.

Crystal growth of a novel and efficient Tl2HfCl6 scintillator with improved scintillation characteristics

CrystEngComm ◽  
2019 ◽  
Vol 21 (39) ◽  
pp. 5898-5904 ◽  
Author(s):  
Phan Quoc Vuong ◽  
Mohit Tyagi ◽  
S. H. Kim ◽  
H. J. Kim
Keyword(s):  
Crystal Growth ◽  
Single Crystals ◽  
Promising Material ◽  
Vertical Bridgman

Single crystals of a new promising material Tl2HfCl6 were successfully grown by using a modified vertical Bridgman furnace.

Studies on acenaphthene (C12H10) single crystals grown by vertical Bridgman technique

2005 ◽  
Vol 285 (4) ◽  
pp. 649-660 ◽  
Author(s):  
R. Ramesh Babu ◽  
N. Balamurugan ◽  
N. Vijayan ◽  
R. Gopalakrishnan ◽  
G. Bhagavannarayana ◽  
...  
Keyword(s):  
Single Crystals ◽  
Bridgman Technique ◽  
Vertical Bridgman

scholarly journals Single-Crystal Growth of the Ternary BaFe2As2Phase Using the Vertical Bridgman Technique

2009 ◽  
Vol 48 (1) ◽  
pp. 013004 ◽  
Author(s):  
Rei Morinaga ◽  
Kittiwit Matan ◽  
Hiroyuki S. Suzuki ◽  
Taku J. Sato
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Bridgman Technique ◽  
Vertical Bridgman

LiTaO3 Single Crystal Growth by the Vertical Bridgman Technique

2018 ◽  
Vol 53 (9) ◽  
pp. 1800044 ◽  
Author(s):  
Eiichiro Nishimura ◽  
Katsuhiko Okano ◽  
Junji Iida ◽  
Keigo Hoshikawa
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Single Crystal Growth ◽  
Bridgman Technique ◽  
Vertical Bridgman

scholarly journals Excitons in PL spectra of Cu(In, Ga)Se-=SUB=-2-=/SUB=- single crystal -=SUP=-*-=/SUP=-

2019 ◽  
Vol 61 (5) ◽  
pp. 1002
Author(s):  
E. Skidchenko ◽  
M.V. Yakushev ◽  
L. Spasevski ◽  
P.R. Edwards ◽  
M.A. Sulimov ◽  
...  
Keyword(s):  
Single Crystals ◽  
Free Exciton ◽  
Excitation Intensity ◽  
Structural Quality ◽  
Near Band Edge ◽  
Bridgman Technique ◽  
Pl Spectra ◽  
Vertical Bridgman ◽  
Ga Content

AbstractA photoluminescence (PL) study of Cu(In,Ga)Se_2 (CIGSe) single crystals, (grown by the vertical Bridgman technique) with the [Ga]/[Ga + In] ratio of 7 and 12% and the [Cu]/[In + Ga] ratio greater than unity, as measured by energy dispersive spectroscopy, is presented. Analysis of the excitation intensity and temperature dependence of the PL spectra suggested the excitonic nature of the observed near-band-edge emissions peaks. Free and bound excitons in CIGSe single crystals with both 7 and 12% Ga content are clearly observed, analyzed and identified. An activation energy of 19 meV is determined for the free exciton in the PL spectra of the sample with 12% Ga. The presence of the excitons demonstrated a high structural quality of the material.

scholarly journals Synthesis and single crystal growth of gallium phosphide by the liquid encapsulated vertical Bridgman technique

1988 ◽  
Vol 11 (4) ◽  
pp. 269-275 ◽  
Author(s):  
K Govinda Rajan ◽  
N V Chandra Shekar ◽  
G V N Rao ◽  
A J Singh ◽  
R M Iyer
Keyword(s):  
Crystal Growth ◽  
Single Crystal ◽  
Gallium Phosphide ◽  
Single Crystal Growth ◽  
Bridgman Technique ◽  
Vertical Bridgman

Influence of Silicon and Boron Doping on the Thermal Conductivity of N-GaAs Single Crystals

2011 ◽  
Vol 671 ◽  
pp. 153-163 ◽  
Author(s):  
M. Prema Rani ◽  
R. Saravanan
Keyword(s):  
Thermal Conductivity ◽  
Single Crystals ◽  
Boron Doping ◽  
The Other ◽  
Czochralski Technique ◽  
Bridgman Technique ◽  
Two Samples ◽  
Vertical Bridgman

Thermal conductivity of three different GaAs crystals, one grown by Liquid Encapsulated Czochralski technique and the other two samples grown by Vertical Bridgman technique have been experimentally measured at temperatures 310 K to 360 K. Two crystals are undoped and semi insulating and one crystal is conductive which is doped with Si and B(Silicon ≈ 4x1015 cm-3 and Boron ≈ 8x 1015cm-3). It has been experimentally observed that doping of silicon and boron gives rise to an increase in thermal conductivity.

scholarly journals Primary and secondary dendrite spacing of Ni-based superalloy single crystals

2009 ◽  
Vol 74 (1) ◽  
pp. 61-69 ◽  
Author(s):  
Slobodanka Kostic ◽  
Aleksandar Golubovic ◽  
Andreja Valcic
Keyword(s):  
Crystal Growth ◽  
Temperature Gradient ◽  
Single Crystals ◽  
Gradient Method ◽  
Dendrite Spacing ◽  
Published Data ◽  
Bridgman Technique ◽  
Spontaneous Nucleation ◽  
Vertical Furnace ◽  
Growth Experiments

Ni-based superalloy single crystals were grown by different methods (gradient method and Bridgman technique with spontaneous nucleation and with seed). In all crystal growth experiments using the Bridgman technique, the temperature gradient along the vertical furnace axes was constant (G = 33.5 ?C/cm). The obtained single crystals were cut, mechanical and chemical polished, and chemically etched. Using a metallographic microscope, the spacing of the primary and secondary dendrites was investigated. The dendrite arm spacing (DAS) was determined using a Quantimet 500 MC. The obtained results are discussed and compared with published data.

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