Materials Science Issues of Plasma Source Ion Implantation

1995 ◽  
Vol 396 ◽  
Author(s):  
M. Nastasi ◽  
A.A. Elmoursi ◽  
R.J. Faehl ◽  
A.H. Hamdi ◽  
I. Henins ◽  
...  

AbstractIon beam processing, including ion implantation and ion beam assisted deposition (IBAD), are established surface modification techniques which have been used successfully to synthesize materials for a wide variety of tribological applications. In spite of the flexibility and promise of the technique, ion beam processing has been considered too expensive for mass production applications. However, an emerging technology, Plasma Source Ion Implantation (PSII), has the potential of overcoming these limitations to become an economically viable tool for mass industrial applications. In PSII, targets are placed directly in a plasma and then pulsed-biased to produce a non-line-of-sight process for intricate target geometries without complicated fixturing. If the bias is a relatively high negative potential (20-100kV) ion implantation will result. At lower voltages (50-1200V), deposition occurs. Potential applications for PSII are in low-value-added products such as tools used in manufacturing, orthopedic devices, and the production of wear coatings for hard disk media. This paper will focus on the technology and materials science associated with PSII.

1990 ◽  
Vol 8 (4) ◽  
pp. 3146-3151 ◽  
Author(s):  
J. R. Conrad ◽  
R. A. Dodd ◽  
S. Han ◽  
M. Madapura ◽  
J. Scheuer ◽  
...  

1999 ◽  
Vol 14 (11) ◽  
pp. 4351-4357 ◽  
Author(s):  
Zoran Falkenstein ◽  
Kevin C. Walter ◽  
Michael A. Nastasi ◽  
Donald J. Rej ◽  
Nikolai V. Gavrilov

Results of ion implantation of nitrogen into electrodeposited hard chromium and pure aluminum by a high-dose ion-beam source are presented and compared to plasma-source ion implantation. The large-area, high current density ion-beam source can be characterized, with respect to surface modification use, by a uniform emitted dose rate in the range of 1016 to 5 × 1017 N cm−2 min−1 over an area of <100 cm2 and with acceleration energies of 10–50 keV. The implantation range and retained dose (measured using ion-beam analysis), the surface hardness, coefficient of friction, and the change in the wear coefficient (measured by nanohardness indentation and pin-on-disk wear testing) that were obtained with an applied dose rate of ∼1.7 × 1017 N cm−2 min−1 at 25 kV are given, and they are compared to results obtained with plasma-source ion implantation.


1992 ◽  
Author(s):  
JOHN CONRAD ◽  
M. ABUZRIBA ◽  
J. BLANCHARD ◽  
D. CHAPEK ◽  
A. CHEN ◽  
...  

1997 ◽  
Vol 93 (2-3) ◽  
pp. 247-253 ◽  
Author(s):  
R.J. Matyi ◽  
D.L. Chapek ◽  
D.P. Brunco ◽  
S.B. Felch ◽  
B.S. Lee

1995 ◽  
Vol 77 (3) ◽  
pp. 1015-1019 ◽  
Author(s):  
Shamim M. Malik ◽  
D. E. Muller ◽  
K. Sridharan ◽  
R. P. Fetherston ◽  
Ngoc Tran ◽  
...  

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