Study on the Diamond Field Emitter Fabricated by Transfer Mold Technique

1996 ◽  
Vol 424 ◽  
Author(s):  
Byeong-Kwon Ju ◽  
Seong-Jin Kim ◽  
Jae-Hoon Jung ◽  
Yun-Hi Lee ◽  
Beom Soo Park ◽  
...  

ABSTRACTStrip-shaped diamond-tip field emitter array was fabricated by using the transfer mold technique. The sharp turn-on characteristic was observed from the current-voltage measurement of the fabricated diamond-tip field emitter array. The turn-on characteristic of the diamond-tip field emitter array was compared with that of a flat diamond film. High emission current density was obtained from the diamond-tip field emitter array. The threshold voltage of the diamond-tip field emitter array was lower than that of a flat diamond film.


2010 ◽  
Vol 97 (11) ◽  
pp. 113107 ◽  
Author(s):  
Chi Li ◽  
Yan Zhang ◽  
Mark Mann ◽  
David Hasko ◽  
Wei Lei ◽  
...  




2000 ◽  
Vol 621 ◽  
Author(s):  
Y.M. Fung ◽  
W.Y. Cheung ◽  
I.H. Wilson ◽  
J.B. Xu ◽  
S.P. Wong

ABSTRACTA new fast fabrication method entailing, two step anodization of silicon with different HF solutions was used to form a high aspect ratio silicon Field Emitter Array on n-type silicon (resistivity of 0.01cm). A Silicon oxide mask was used to define the field emitter array. The silicon substrate was pre-anodized with low current density for 1 minute in the dark and then anodized in HF:H2O:Ethanol solution. Finally, the porous silicon was removed by isotropic solution etching. The turn-on voltage of the fabricated field emitters was approximately 27V/μm when the emission current density reaches 1μA/cm2. This compares with the turn-on field of about 35V/μm on silicon tip array fabricated by using an isotropic etching solution of HNO3. We obtained field emitter arrays with good uniformity and reproducibility.



1996 ◽  
Vol 424 ◽  
Author(s):  
S. L. Skala ◽  
D. A. Ohlberg ◽  
A. A. Talin ◽  
T. E. Felter

ABSTRACTThe electron emission properties of a Spindt-type field emitter array have been measured before and after deposition of approximately 100 Å of gold. The workfunction of the emitter decreased by 5% after gold deposition resulting in an 11% reduction in turn-on voltage. Emission stability as measured by RMS current noise improved by 40%. Improvements in emission do not withstand exposure to air. However, baking at moderate temperatures (200°C) restores the emission improvements obtained with the gold overcoating. Fowler-Nordheim plots show that the enhanced emission after baking is due to a increase of the Fowler-Nordheim intercept and not a decrease in slope. Additionally, the gold over coatings resist poisoning as a 50,000 L dose of oxygen only slightly affects emission.





Author(s):  
Byeong Kwon Ju ◽  
Seong-Jin Kim ◽  
Yun Hi Lee ◽  
Beom Soo Park ◽  
Young-Joon Baik ◽  
...  




2015 ◽  
Vol 643 ◽  
pp. 012122 ◽  
Author(s):  
K A Nikiforov ◽  
M F Sayfullin


2009 ◽  
Vol 48 (6) ◽  
pp. 06FK02 ◽  
Author(s):  
Masayoshi Nagao ◽  
Tomoya Yoshida ◽  
Seigo Kanemaru ◽  
Yoichiro Neo ◽  
Hidenori Mimura


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