Gold Overcoatings on Spindt-Type Field Emitter Arrays

1996 ◽  
Vol 424 ◽  
Author(s):  
S. L. Skala ◽  
D. A. Ohlberg ◽  
A. A. Talin ◽  
T. E. Felter
Keyword(s):  
Electron Emission ◽  
Current Noise ◽  
Gold Deposition ◽  
Field Emitter ◽  
Emission Properties ◽  
Turn On ◽  
Field Emitter Arrays ◽  
Before And After ◽  
Emitter Array ◽  
Field Emitter Array

ABSTRACTThe electron emission properties of a Spindt-type field emitter array have been measured before and after deposition of approximately 100 Å of gold. The workfunction of the emitter decreased by 5% after gold deposition resulting in an 11% reduction in turn-on voltage. Emission stability as measured by RMS current noise improved by 40%. Improvements in emission do not withstand exposure to air. However, baking at moderate temperatures (200°C) restores the emission improvements obtained with the gold overcoating. Fowler-Nordheim plots show that the enhanced emission after baking is due to a increase of the Fowler-Nordheim intercept and not a decrease in slope. Additionally, the gold over coatings resist poisoning as a 50,000 L dose of oxygen only slightly affects emission.

Silicon Field Emitter Array by Fast Anodization Method

2000 ◽  
Vol 621 ◽  
Author(s):  
Y.M. Fung ◽  
W.Y. Cheung ◽  
I.H. Wilson ◽  
J.B. Xu ◽  
S.P. Wong
Keyword(s):  
Current Density ◽  
Silicon Oxide ◽  
Emission Current Density ◽  
Field Emitter ◽  
Turn On ◽  
Field Emitter Arrays ◽  
Isotropic Etching ◽  
Field Emitters ◽  
Emitter Array ◽  
Field Emitter Array

ABSTRACTA new fast fabrication method entailing, two step anodization of silicon with different HF solutions was used to form a high aspect ratio silicon Field Emitter Array on n-type silicon (resistivity of 0.01cm). A Silicon oxide mask was used to define the field emitter array. The silicon substrate was pre-anodized with low current density for 1 minute in the dark and then anodized in HF:H2O:Ethanol solution. Finally, the porous silicon was removed by isotropic solution etching. The turn-on voltage of the fabricated field emitters was approximately 27V/μm when the emission current density reaches 1μA/cm2. This compares with the turn-on field of about 35V/μm on silicon tip array fabricated by using an isotropic etching solution of HNO3. We obtained field emitter arrays with good uniformity and reproducibility.

Surface Modification of Si Field Emitter Arrays for Vacuum Sealing

2000 ◽  
Vol 621 ◽  
Author(s):  
M. Nagao ◽  
H. Tanabe ◽  
T. Kobayashi ◽  
T. Matsukawa ◽  
S. Kanemaru ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Vacuum Packaging ◽  
Field Emitter ◽  
Vacuum Sealing ◽  
Field Emitter Arrays ◽  
Vacuum Microelectronics ◽  
Field Emission Displays ◽  
Before And After ◽  
Heating Treatment ◽  
Field Emitter Array

ABSTRACTVacuum packaging is a very important issue for vacuum microelectronics devices, especially for field emission displays. Emission current from the field emitter array (FEA), however, is known to decrease significantly after the vacuum packaging process. The current decrease is caused by heating treatment in the vacuum sealing process. In the present paper, the effect of the heating treatment on Si FEA was investigated and CHF3 plasma treatment was proposed for avoiding the problem. The Si FEA was exposed to plasma for 15sec and emission characteristics were measured before and after the vacuum sealing process using frit. It was confirmed that CHF3 plasma treatment was very effective for avoiding the emission degradation of the Si FEA. Details of the heating damage and CHF3 plasma treatment are described.

scholarly journals Nanocone-Shaped Carbon Nanotubes Field-Emitter Array Fabricated by Laser Ablation

Nanomaterials ◽  
2021 ◽  
Vol 11 (12) ◽  
pp. 3244
Author(s):  
Jiuzhou Zhao ◽  
Zhenjun Li ◽  
Matthew Thomas Cole ◽  
Aiwei Wang ◽  
Xiangdong Guo ◽  
...  
Keyword(s):  
Carbon Nanotubes ◽  
Laser Ablation ◽  
High Performance ◽  
Low Cost ◽  
Field Emitter ◽  
Beam Focusing ◽  
Field Emitter Arrays ◽  
Emitter Array ◽  
Field Emitter Array ◽  
Tip Radius

The nanocone-shaped carbon nanotubes field-emitter array (NCNA) is a near-ideal field-emitter array that combines the advantages of geometry and material. In contrast to previous methods of field-emitter array, laser ablation is a low-cost and clean method that does not require any photolithography or wet chemistry. However, nanocone shapes are hard to achieve through laser ablation due to the micrometer-scale focusing spot. Here, we develop an ultraviolet (UV) laser beam patterning technique that is capable of reliably realizing NCNA with a cone-tip radius of ≈300 nm, utilizing optimized beam focusing and unique carbon nanotube–light interaction properties. The patterned array provided smaller turn-on fields (reduced from 2.6 to 1.6 V/μm) in emitters and supported a higher (increased from 10 to 140 mA/cm2) and more stable emission than their unpatterned counterparts. The present technique may be widely applied in the fabrication of high-performance CNTs field-emitter arrays.

Study on the Diamond Field Emitter Fabricated by Transfer Mold Technique

1996 ◽  
Vol 424 ◽  
Author(s):  
Byeong-Kwon Ju ◽  
Seong-Jin Kim ◽  
Jae-Hoon Jung ◽  
Yun-Hi Lee ◽  
Beom Soo Park ◽  
...  
Keyword(s):  
Diamond Film ◽  
Emission Current Density ◽  
Voltage Measurement ◽  
Field Emitter ◽  
Turn On ◽  
Current Voltage ◽  
Sharp Turn ◽  
High Emission ◽  
Emitter Array ◽  
Field Emitter Array

ABSTRACTStrip-shaped diamond-tip field emitter array was fabricated by using the transfer mold technique. The sharp turn-on characteristic was observed from the current-voltage measurement of the fabricated diamond-tip field emitter array. The turn-on characteristic of the diamond-tip field emitter array was compared with that of a flat diamond film. High emission current density was obtained from the diamond-tip field emitter array. The threshold voltage of the diamond-tip field emitter array was lower than that of a flat diamond film.

Graphene Nanotubule Cold Field Emission Electron Sources

1994 ◽  
Vol 349 ◽  
Author(s):  
B. H. Fishbine ◽  
C. J. Miglionico ◽  
K. E. Hackett ◽  
K. J. Hendricks
Keyword(s):  
Field Emission ◽  
Current Density ◽  
High Current Density ◽  
High Current ◽  
Field Emitter ◽  
Electron Sources ◽  
Field Emitter Arrays ◽  
Emission Electron ◽  
Emitter Array ◽  
Field Emitter Array

ABSTRACTBuckytubes are considered for high current density cold field emitter array electron sources. They may provide more stable, higher-brightness emission than existing cold field emitter arrays.

Fabrication Technologies of Field Emitter Arrays

1997 ◽  
Vol 471 ◽  
Author(s):  
J. H. Choi ◽  
Y. S. Ryu ◽  
J. H. Kang ◽  
J. E. Jang ◽  
J. M. Kim ◽  
...  
Keyword(s):  
Laser Power ◽  
Total Internal Reflection ◽  
Field Emitter ◽  
Field Emitter Arrays ◽  
Scan Speed ◽  
Basic Parameters ◽  
Emitter Array ◽  
Field Emitter Array ◽  
Tip Formation ◽  
Step Distance

ABSTRACTTotal internal reflection (TIR) holographic lithography is studied as a new method for field emitter array (FEA) fabrication. Four basic parameters of the process - scan speed, laser power, focus distance and step distance, are analyzed to optimize the hole patterns. In addition, the characteristics of the Aluminum (Al) parting layer are studied to minimize the stress produced by Molybdenum (Mo) layer during Spindt-type tip formation process.

Surface Modification of Si Field Emitter Arrays for Vacuum Sealing

2000 ◽  
Vol 620 ◽  
Author(s):  
M. Nagao ◽  
H. Tanabe ◽  
T. Kobayashi ◽  
T. Matsukawa ◽  
S. Kanemaru ◽  
...  
Keyword(s):  
Plasma Treatment ◽  
Vacuum Packaging ◽  
Field Emitter ◽  
Vacuum Sealing ◽  
Field Emitter Arrays ◽  
Vacuum Microelectronics ◽  
Field Emission Displays ◽  
Before And After ◽  
Heating Treatment ◽  
Field Emitter Array

ABSTRACTVacuum packaging is a very important issue for vacuum microelectronics devices, especially for field emission displays. Emission current from the field emitter array (FEA), however, is known to decrease significantly after the vacuum packaging process. The current decrease is caused by heating treatment in the vacuum sealing process. In the present paper, the effect of the heating treatment on Si FEA was investigated and CHF3 plasma treatment was proposed for avoiding the problem. The Si FEA was exposed to plasma for 15sec and emission characteristics were measured before and after the vacuum sealing process using frit. It was confirmed that CHF3 plasma treatment was very effective for avoiding the emission degradation of the Si FEA. Details of the heating damage and CHF3 plasma treatment are described.

Electron Emission from Gated Diamond Emitter Array

1998 ◽  
Vol 509 ◽  
Author(s):  
Seung -Chul Ha ◽  
Dae-Hwan Kang ◽  
Byung-Sung Kim ◽  
Seok-Hong Min ◽  
Ki-Bum Kim
Keyword(s):  
Electron Emission ◽  
Silicon Substrate ◽  
Current Level ◽  
Selective Deposition ◽  
Processing Scheme ◽  
Electrode Layer ◽  
Field Emitter ◽  
Field Emitter Arrays ◽  
Emitter Array ◽  
Novel Processing

AbstractA novel processing sequence for the formation of gated diamond field emitter arrays (triode system) is proposed and the feasibility is tested by investigating the field emission property. The processing scheme is based on the selective deposition of diamond using the well established nucleation enhanced process on silicon substrate, so called bias enhanced nucleation (BEN). Selective deposition of diamond using the same process was also demonstrated on titanium nitride (TIN) electrode layer. Our preliminary results show that the diamond field emitter is turned on at around 97 V/μm with the current level of about several μA.

Design and construction of apparatus for characterization of gated field emitter array electron emission

1996 ◽  
Vol 67 (6) ◽  
pp. 2387-2393 ◽  
Author(s):  
Purobi M. Phillips ◽  
Charles Hor ◽  
Lex Malsawma ◽  
Kevin L. Jensen ◽  
Ernest G. Zaidman
Keyword(s):  
Electron Emission ◽  
Field Emitter ◽  
Emitter Array ◽  
Field Emitter Array ◽  
Design And Construction
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