A Study of Mixed Group-V Nitrides Grown by Gas-Source Molecular Beam Epitaxy Using a Nitrogen Radical Beam Source

1996 ◽  
Vol 449 ◽  
Author(s):  
W. G. BI ◽  
C. W. Tu ◽  
D. Mathes ◽  
R. Hull
Keyword(s):  
Phase Separation ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Bandgap Energy ◽  
Beam Source ◽  
Group V ◽  
Optical Absorption Measurement ◽  
Gas Source ◽  
Cubic Gan ◽  
N Incorporation

ABSTRACTWe report a study of N incorporation in GaAs and InP by gas-source molecular beam epitaxy using a N radical beam source. For GaNAs grown at high temperatures, phase separation was observed, as evidenced from the formation of cubic GaN aside from GaNAs. By lowering the growth temperature, however, GaNAs alloys with N as high as 14.8% have been obtained without showing any phase separation. For InNP, no phase separation was observed in the temperature range studied (310 – 420 °C). Contrary to GaNAs, incorporating N in InP is very difficult, with only less than 1% N being achieved. Optical absorption measurement reveals strong red shift of bandgap energy with direct-bandgap absorption. However, no semimetallic region seems to exist for GaNAs and a composition-dependent bowing parameter has been observed.

Study of As and P Incorporation Behavior in GaAsP by Gas-Source Molecular-Beam Epitaxy

1991 ◽  
Vol 222 ◽  
Author(s):  
B. W. Liang ◽  
H. Q. Hou ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
High Energy ◽  
Ex Situ ◽  
Limited Growth ◽  
Group V ◽  
Group Iii ◽  
Gas Source ◽  
Simple Kinetic Model

ABSTRACTA simple kinetic model has been developed to explain the agreement between in situ and ex situ determination of phosphorus composition in GaAs1−xPx (x < 0.4) epilayers grown on GaAs (001) by gas-source molecular-beam epitaxy (GSMBE). The in situ determination is by monitoring the intensity oscillations of reflection high-energy-electron diffraction during group-V-limited growth, and the ex situ determination is by x-ray rocking curve measurement of GaAs1−xPx/GaAs strained-layer superlattices grown under group-III-limited growth condition.

Reflection High-Energy-Electron Diffraction Study of Inp and InAs (100) In Gas-Source Molecular Beam Epitaxy

1990 ◽  
Vol 216 ◽  
Author(s):  
T. P. Chin ◽  
B. W. Liang ◽  
H. Q. Hou ◽  
C. W. Tu
Keyword(s):  
Molecular Beam Epitaxy ◽  
Electron Diffraction ◽  
Molecular Beam ◽  
Electron Diffraction Study ◽  
High Energy ◽  
Energy Electron ◽  
High Energy Electron ◽  
Group V ◽  
Precise Control ◽  
Gas Source

ABSTRACTInP and InAs (100) were grown by gas-source molecular-beam epitaxy (GSMBE) with arsine, phosphine, and elemental indium. Reflection high-energy-electron diffraction (RHEED) was used to monitor surface reconstructions and growth rates. (2×4) to (2×1) transition was observed on InP (100) as phosphine flow rate increased. (4×2) and (2×4) patterns were observed for In-stabilized and As-stabilized InAs surfaces, respectively. Both group-V and group-rn-induced RHEED oscillations were observed. The group-V surface desorption activation energy were measured to be 0.61 eV for InP and 0.19 eV for InAs. By this growth rate study, we are able to establish a precise control of V/HII atomic ratios in GSMBE of InP and InAs.

Orientation-dependent phase separation of GaAsSb epilayers grown by gas-source molecular-beam epitaxy

2012 ◽  
Vol 520 (13) ◽  
pp. 4486-4492 ◽  
Author(s):  
Yi-Ren Chen ◽  
Li-Chang Chou ◽  
Ying-Jay Yang ◽  
Hao-Hsiung Lin
Keyword(s):  
Phase Separation ◽  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gas Source

Strain-induced compositional shift in the growth of InAsyP1−y onto (100) InP by gas-source molecular beam epitaxy

1992 ◽  
Vol 70 (10-11) ◽  
pp. 886-892 ◽  
Author(s):  
C. Qiu ◽  
R. V. Kruzelecky ◽  
D. A. Thompson ◽  
D. Comedi ◽  
G. Balcaitis ◽  
...  
Keyword(s):  
Molecular Beam Epitaxy ◽  
Film Thickness ◽  
Molecular Beam ◽  
Compressive Strain ◽  
Effective Strain ◽  
Depth Profiling ◽  
Group V ◽  
Gas Source ◽  
Substrate Temperatures ◽  
Incorporation Ratio

The growth of InAsyP1−y onto (100) InP by gas-source molecular beam epitaxy was examined systematically, focusing on control of the resulting As/P incorporation ratio. The group V fluxes were obtained by passing phosphine and arsine through a dual-input low-pressure gas cracker. For a given flow ratio of the source gases, the arsenic fraction y of the resulting InAsyP1−y films is seen to increase with the film thickness over the first 1500 Å (1 Å = 10−10 m) as indicated by secondary ion mass spectroscopy, Auger depth profiling, and by Rutherford backscattering spectroscopy. Thin, strained InAsyP1−y layers (0.30 < y < 0.70, corresponding to a compressive strain of about 1.0–2.2%) contain about 5–20% less As than similarly grown thicker, relaxed layers. For a given growth rate and substrate temperature, the relative compositional shift is found to be linearly proportional to the effective strain corresponding to y. Substrate temperatures above 475 °C further reduce the incorporation ratio of As into both strained and relaxed InAsyP1−y layers, initially enhancing the strain-induced compositional shift. However, strain minimization via a compositional shift competes with a greater rate of relaxation of the InAsP lattice with film thickness at higher substrate temperatures.

Incorporation of group V elements in Gaxin1−xAsyP1−y grown by gas source molecular beam epitaxy

1996 ◽  
Vol 25 (9) ◽  
pp. 1469-1473 ◽  
Author(s):  
Tsuen-Lin Lee ◽  
Jin-Shung Liu ◽  
Hao-Hsiung Lin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Group V ◽  
Gas Source

Nucleation of cubic GaN/GaAs (001) grown by gas source molecular beam epitaxy with hydrazine

1996 ◽  
Vol 69 (21) ◽  
pp. 3227-3229 ◽  
Author(s):  
S. A. Nikishin ◽  
V. G. Antipov ◽  
S. S. Ruvimov ◽  
G. A. Seryogin ◽  
H. Temkin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Molecular Beam ◽  
Gas Source ◽  
Cubic Gan

Structural and Defect Study of Low Temperature INP Grown by Gas Source Molecular Beam Epitaxy

1991 ◽  
Vol 241 ◽  
Author(s):  
J. Ch. Garcia ◽  
J. P. Hirtz ◽  
P. Maurel ◽  
H. J. Von Bardeleben ◽  
J. C. Bourgoin
Keyword(s):  
Molecular Beam Epitaxy ◽  
Low Temperature ◽  
Molecular Beam ◽  
Secondary Ion Mass Spectrometry ◽  
Group V ◽  
Temperature Growth ◽  
Low Temperature Growth ◽  
Gas Source ◽  
High Concentrations ◽  
Secondary Ion

ABSTRACTThe low temperature growth procedure used in the case of GaAs to introduce high concentrations of deep traps such as arsenic antisite defects has been extended to the growth of InP by gas source molecular beam epitaxy. The low temperature growth of InP induces a strong group V stoechiometric deviation (of the order of +1%). On the other hand, Secondary Ion Mass Spectrometry reveals high levels of hydrogen ranging from 3.1018 to 3.1019 cm−3 depending on growth temperature. Undoped layers are found to be resistive without any post annealing. Annealing experiments above 250°C lead to conductive layers suggesting a passivation effect of both shallow donors and acceptors by hydrogen.

Hetero-epitaxial growth of cubic GaN on GaAs by gas-source molecular beam epitaxy

1992 ◽  
Vol 267 (1-3) ◽  
pp. 50-53 ◽  
Author(s):  
S. Yoshida ◽  
H. Okumura ◽  
S. Misawa ◽  
E. Sakuma
Keyword(s):  
Molecular Beam Epitaxy ◽  
Epitaxial Growth ◽  
Molecular Beam ◽  
Gas Source ◽  
Cubic Gan
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