Subpicosecond Time-Resolved Raman Studies of Nonequilibrium Excitations in Wurtzite GaN

1996 ◽  
Vol 449 ◽  
Author(s):  
K. T. Tsen ◽  
R. P. Joshi ◽  
D. K. Ferry ◽  
A. Botchkarev ◽  
B. Sverdlov ◽  
...  

ABSTRACTNon-equilibrium electron distributions as well as phonon dynamics in wurtzite GaN have been measured by subpicosecond time-resolved Raman spectroscopy. Our experimental results have demonstrated that for electron densities n ≥ 5 × l017cm−3, the non-equilibrium electron distributions in wurtzite GaN can be very well described by Fermi-Dirac distribution functions with the temperature of electrons substantially higher than that of the lattice. The population relaxation time of longitudinal optical phonons was directly measured to be τ ≅ 5 ± 1 ps at T = 25 K. The experimental results on the temperature dependence of the lifetime of longitudinal optical phonons suggest that the primary decay channels for these phonons are the decay into (1) one transverse optical phonon and one high energy, longitudinal or transverse acoustical phonons; and (2) one transverse optical phonon and one E2 phonon.

2012 ◽  
Vol 100 (9) ◽  
pp. 091101 ◽  
Author(s):  
Miriam S. Vitiello ◽  
Rita C. Iotti ◽  
Fausto Rossi ◽  
Lukas Mahler ◽  
Alessandro Tredicucci ◽  
...  

2020 ◽  
Vol 20 (7) ◽  
pp. 4358-4363
Author(s):  
Jeung Hun Park ◽  
Richard S. Kim ◽  
Se-Jeong Park ◽  
Gye-Choon Park ◽  
Choong-Heui Chung

We report the relation between the catalyst patterning conditions and the intensity of the 1st order Raman active modes in Au-catalyzed GaAs nanowire bundles. We fabricated e-beam lithographically Au-patterned GaAs(111)B substrates by varying the patterning conditions (e-beam dose rate, dot-size and interdot-spacings), and grew GaAs nanowires via vapor–liquid–solid process using a solid-source molecular beam epitaxy. To understand the effects of the substrate preparation conditions and resulting morphologies on the optical characteristics of 1st order transverse optical and longitudinal optical phonon modes of GaAs, we characterized the nanowire bundles using complementary μ-Raman spectroscopy and scanning electron microscopy as a function of the e-beam dose rate (145–595 μC/cm2), inter-dot spacing (100 and 150 nm) and pattern size (100 and 150 nm). Ensembles of single crystalline GaAs nanowires covered with different Au-thickness exhibit a downshift and asymmetric broadening of the 1st order transverse optical and longitudinal optical phonon peaks relative to GaAs bulk modes. We also showed that the sensitivity of a downshift and broadening of Raman spectra are directly related to morphological and surface coverage variations in as-grown nanowires. We observed clear increases of the transverse optical and longitudinal optical intensity as well as the relatively higher peak shift and broadening of Raman spectra from the 100 nm patterning in response to the dose rate change. Strong dependence of Raman spectra of the nanowire bundles on the e-beam dose rate changes are attributed to the variations in spatial density, size, shape and random growth orientation of the wires. We have shown that the identification of the changes in GaAs longitudinal optical and Arsenic anti-site peaks is good indicators to characterize the quality of as-grown GaAs nanowires. Our finding confirms the utilization of Raman spectroscopy as a powerful tool for characterizing chemical, structural, and morphological information of as-grown nanowires within the supporting substrate.


1998 ◽  
Vol 72 (17) ◽  
pp. 2132-2134 ◽  
Author(s):  
K. T. Tsen ◽  
D. K. Ferry ◽  
A. Botchkarev ◽  
B. Sverdlov ◽  
A. Salvador ◽  
...  

2005 ◽  
Vol 2 (7) ◽  
pp. 2324-2327
Author(s):  
W. Liang ◽  
K. T. Tsen ◽  
C. Poweleit ◽  
D. K. Ferry ◽  
Shaw-Wei D. Tsen ◽  
...  

2007 ◽  
Vol 90 (17) ◽  
pp. 172108 ◽  
Author(s):  
K. T. Tsen ◽  
Juliann G. Kiang ◽  
D. K. Ferry ◽  
Hai Lu ◽  
William J. Schaff ◽  
...  

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