Electron Paramagnetic Resonance of Intrinsic Defects in III-V Semiconductors
Keyword(s):
AbstractThe use of electron paramagnetic resonance to investigate intrinsic defects in the III-V semiconductors is reviewed. Particular attention is given to lattice vacancies, antisites and their complexes in GaP, GaAs, and InP. The role of EPR in arriving at an understanding of these defects is emphasized and the interplay between experiment and theory is discussed.
2009 ◽
pp. 507-549
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2008 ◽
Vol 600-603
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pp. 381-384
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2017 ◽
Vol 2017
(13)
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pp. 1900-1907
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2011 ◽
Vol 71
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pp. 721-727
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1967 ◽
Vol 89
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pp. 1253-1257
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