Electron Paramagnetic Resonance of Intrinsic Defects in III-V Semiconductors

1985 ◽  
Vol 46 ◽  
Author(s):  
N. D. Wilsey ◽  
T. A. Kennedy

AbstractThe use of electron paramagnetic resonance to investigate intrinsic defects in the III-V semiconductors is reviewed. Particular attention is given to lattice vacancies, antisites and their complexes in GaP, GaAs, and InP. The role of EPR in arriving at an understanding of these defects is emphasized and the interplay between experiment and theory is discussed.

2008 ◽  
Vol 600-603 ◽  
pp. 381-384 ◽  
Author(s):  
Patrick Carlsson ◽  
Nguyen Tien Son ◽  
Björn Magnusson ◽  
Anne Henry ◽  
Erik Janzén

High-purity, semi-insulating 6H-SiC substrates grown by high-temperature chemical vapor deposition were studied by electron paramagnetic resonance (EPR). The carbon vacancy (VC), the carbon vacancy-antisite pair (VCCSi) and the divacancy (VCVSi) were found to be prominent defects. The (+|0) level of VC in 6H-SiC is estimated by photoexcitation EPR (photo-EPR) to be at ~ 1.47 eV above the valence band. The thermal activation energies as determined from the temperature dependence of the resistivity, Ea~0.6-0.7 eV and ~1.0-1.2 eV, were observed for two sets of samples and were suggested to be related to acceptor levels of VC, VCCSi and VCVSi. The annealing behavior of the intrinsic defects and the stability of the SI properties were studied up to 1600°C.


2017 ◽  
Vol 2017 (13) ◽  
pp. 1900-1907 ◽  
Author(s):  
Elisa I. García-López ◽  
Giuseppe Marcì ◽  
Francesca R. Pomilla ◽  
Leonarda F. Liotta ◽  
Bartolomeo Megna ◽  
...  

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