Electronic Structure of the Organic Metals κ-Et2cu(SCN)2 and κ-Et2cu[N(Cn)2]Br Measured by Soft X-Ray Emission and Soft X-Ray Absorption

1997 ◽  
Vol 488 ◽  
Author(s):  
Cristian B. Stagarescu ◽  
L.-C. Duda ◽  
Kevin E. Smith ◽  
J. H. Guo ◽  
J. Nordgren ◽  
...  

AbstractThe electronic structure of the two organic, layered metals κ-ET2Cu(SCN)2 and K-ET 2Cu[N(CN)2]Br has been studied using a combination of soft X-ray emission (SXE) and soft X-ray absorption (SXA) spectroscopy. These techniques are powerful probes of the site and angular-momentum resolved partial density of states (PDOS) for both occupied and unoccupied states. Therefore these spectroscopies are particularly suited for an analysis of the density of states of multi-atomic, complex materials as the ET-based organic conductors, allowing site-specific electronic structure to be measured. Furthermore, for certain materials, the electronic structure of specific layers can be measured. We present a preliminary picture of the electronic structure of κ-ET 2Cu(SCN)2 and κ-ET 2Cu[N(CN)2]Br as measured by SXE and SXA performed at the C-Is and N- Is core levels.

1996 ◽  
Vol 449 ◽  
Author(s):  
Kevin E. Smith ◽  
Sarnjeet S Dhesi ◽  
Laurent-C. Duda ◽  
Cristian B Stagarescu ◽  
J. H. Guo ◽  
...  

ABSTRACTThe electronic structure of thin film wurtzite GaN has been studied using a combination of angle resolved photoemission, soft x-ray absorption and soft x-ray emission spectroscopies. We have measured the bulk valence and conduction band partial density of states by recording Ga L- and N K- x-ray emission and absorption spectra. We compare the x-ray spectra to a recent ab initio calculation and find good overall agreement. The x-ray emission spectra reveal that the top of the valence band is dominated by N 2p states, while the x-ray absorption spectra show the bottom of the conduction band as a mixture of Ga 4s and N 2p states, again in good agreement with theory. However, due to strong dipole selection rules we can also identify weak hybridization between Ga 4s- and N 2p-states in the valence band. Furthermore, a component to the N K-emission appears at approximately 19.5 eV below the valence band maximum and can be identified as due to hybridization between N 2p and Ga 3d states. We report preliminary results of a study of the full dispersion of the bulk valence band states along high symmetry directions of the bulk Brillouin zone as measured using angle resolved photoemission. Finally, we tentatively identify a non-dispersive state at the top of the valence band in parts of the Brillouin zone as a surface state.


2018 ◽  
Vol 20 (27) ◽  
pp. 18623-18629 ◽  
Author(s):  
T. Mukherjee ◽  
Sumona Sinha ◽  
M. Mukherjee

X-ray absorption spectra (XAS), the density of states (DOS) and the electron density distribution of the HOMO and LUMO for flat and twisted rubrene molecules have been calculated using density functional theory (DFT).


2002 ◽  
Vol 743 ◽  
Author(s):  
Cormac McGuinness ◽  
James E. Downes ◽  
Philip Ryan ◽  
Kevin E. Smith ◽  
Dharanipal Doppalapudi ◽  
...  

ABSTRACTSynchrotron radiation excited soft x-ray emission and soft x-ray absorption spectroscopies are applied to the study of the electronic structure of InxGa1-xN alloys with (0 ≤ x ≤ 0.29). The elementally resolved partial density of states of the valence and conduction bands may be measured using these spectroscopies. The x-ray absorption spectra indicate that the conduction band broadens considerably with increasing indium incorporation. The band gap evolution as a function of indium content derives primarily from this broadening of the conduction band states. The emission spectra indicate that motion of the valence band makes a smaller contribution to the evolution of the band gap. This gap evolution differs from previous studies on the AlxGa1-xN alloy system, which observed a linear valence band shift through the series (0 < x < 1). Instead in the case of InxGa1-xN the valence band exhibits a significant shift between x = 0 and x = 0.1 with minimal movement thereafter. Furthermore, evidence of In 4d -N 2p and Ga 3d- N 2p hybridisation is reported. Finally, the thermal stability of an In011Ga089N film was investigated. Both emission and absorption spectra were found to have a temperature dependent shift in energy, but the overall definition of the spectra was unaltered even at annealing temperatures well beyond the growth temperature of the film.


1995 ◽  
Vol 71 (1-3) ◽  
pp. 1563-1566 ◽  
Author(s):  
N Nücker ◽  
E Pellegrin ◽  
P Schweiβ ◽  
E Sohmen ◽  
J Fink ◽  
...  

2002 ◽  
Vol 731 ◽  
Author(s):  
L.-S. Hsu ◽  
Y. K. Wang ◽  
G. Y. Guo ◽  
Y.-J. Huang ◽  
M.-D. Lan

AbstractThe electronic structures of six polycrystalline borocarbide superconductors YPd5-xRhxB3C0.4 (x=0, 0.05, 0.1, 0.15, 0.2, and 0.25) were studied by photoemission and photoabsorption spectroscopies and theoretical calculations. The valence-band (VB) photoemission spectrum is compared with the theoretical total and partial density-of-states (DOS) curves. The Pd L3-edge x-ray absorption near edge spectra (XANES) are compared with the calculated XANES spectra for these intermetallic compounds. The decrease of the superconducting transition temperatures (Tc) with addition of Rh dopant in these compounds is due to a decrease of the total DOS at the Fermi level (EF).


2014 ◽  
Vol 52 (12) ◽  
pp. 1025-1029
Author(s):  
Min-Wook Oh ◽  
Tae-Gu Kang ◽  
Byungki Ryu ◽  
Ji Eun Lee ◽  
Sung-Jae Joo ◽  
...  

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