Tunneling Contributions to NiP and Pin Hydrogenated Amorphous Silicon Devices

1985 ◽  
Vol 49 ◽  
Author(s):  
T.J. McMahon ◽  
A. Madan
Keyword(s):  
Amorphous Silicon ◽  
Open Circuit Voltage ◽  
Hydrogenated Amorphous Silicon ◽  
Deposition Process ◽  
Open Circuit ◽  
Silicon Devices ◽  
Layer Deposition ◽  
The Difference ◽  
Hydrogenated Amorphous ◽  
Hydrogen Effusion

It is well known that the performance of hydrogenated amorphous silicon (a-Si) p-i-n type devices is determined by the sequence of deposition. For instance, the stainless steel/p-i-n configuration generally shows a larger value of the open circuit voltage (up to 200mV) compared to the n-i-p sequence of deposition \1,2]. Explanations of this phenomena such as the Dember potential \1], self field effect \2], residual doping \3], hydrogen effusion effects associated with the p+ layer deposition process \4, 5] are unable to satisfactorily explain the difference in performance.

scholarly journals Temperature-Dependent Open-Circuit Voltage Measurements and Light-Soaking in Hydrogenated Amorphous Silcon Solar Cells

2005 ◽  
Vol 862 ◽  
Author(s):  
Jianjun Liang ◽  
E. A. Schiff ◽  
S. Guha ◽  
B. Yan ◽  
J. Yang
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Room Temperature ◽  
Open Circuit Voltage ◽  
Hydrogenated Amorphous Silicon ◽  
Open Circuit ◽  
Illumination Intensity ◽  
Temperature Dependent ◽  
Defect Generation ◽  
Hydrogenated Amorphous

AbstractWe present temperature-dependent measurements of the open-circuit voltage VOC(T) in hydrogenated amorphous silicon nip solar cells prepared at United Solar. At room-temperature and above, VOC measured using near-solar illumination intensity differs by as much as 0.04 V for the as-deposited and light-soaked states; the values of VOC for the two states converge below 250 K. Models for VOC based entirely on recombination through deep levels (dangling bonds) do not account for the convergence effect. The convergence is present in a model that assumes the recombination traffic in the as-deposited state involves only bandtails, but which splits the recombination traffic fairly evenly between bandtails and defects for the light-soaked state at room-temperature. Recombination mechanisms are important in understanding light-soaking, and the present results are inconsistent with at least one well-known model for defect generation.

scholarly journals Maximization of the open circuit voltage for hydrogenated amorphous silicon n–i–p solar cells by incorporation of protocrystalline silicon p-type layers

2002 ◽  
Vol 81 (7) ◽  
pp. 1258-1260 ◽  
Author(s):  
R. J. Koval ◽  
Chi Chen ◽  
G. M. Ferreira ◽  
A. S. Ferlauto ◽  
J. M. Pearce ◽  
...  
Keyword(s):  
Solar Cells ◽  
Amorphous Silicon ◽  
Open Circuit Voltage ◽  
Hydrogenated Amorphous Silicon ◽  
Open Circuit ◽  
P Type ◽  
Hydrogenated Amorphous

Effect of the Quantum Size Effect on the Performance of Solar Cells with a Silicon Nanowire Array Embedded in SiO2

2012 ◽  
Vol 1439 ◽  
pp. 145-150
Author(s):  
Yasuyoshi Kurokawa ◽  
Shinya Kato ◽  
Yuya Watanabe ◽  
Akira Yamada ◽  
Makoto Konagai ◽  
...  
Keyword(s):  
Solar Cells ◽  
Size Effect ◽  
Amorphous Silicon ◽  
Silicon Nanowire ◽  
Nanowire Array ◽  
Hydrogenated Amorphous Silicon ◽  
Open Circuit ◽  
Quantum Size Effect ◽  
Quantum Size ◽  
Hydrogenated Amorphous

ABSTRACTThe electrical characteristics of silicon nanowire (SiNW) solar cells with p-type hydrogenated amorphous silicon oxide (Eg=1.9 eV)/n-type SiNWs embedded in SiO2/n-type hydrogenated amorphous silicon (Eg=1.7 eV) structure have been investigated using a two-dimensional device simulator with taking the quantum size effects into account. The average bandgap of a SiNW embedded in SiO2 increased from 1.15 eV to 2.71 eV with decreasing the diameter from 10 nm to 1 nm due to the quantum size effect. It should be noted that under the sunlight with AM1.5G the open-circuit voltage (Voc) of SiNW solar cells also increased to 1.54 V with decreasing the diameter of the SiNWs to 1 nm. This result suggests that it is possible to enhance the Voc by the quantum size effect and a SiNW is a promising material for the all silicon tandem solar cells.

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