High Pressure Study of III-Nitrides and Related Heterostructures

1997 ◽  
Vol 499 ◽  
Author(s):  
W. Shan ◽  
J. W. Ager ◽  
W. Walukiewicz ◽  
E. E. Haller ◽  
B. D. Little ◽  
...  
Keyword(s):  
Diamond Anvil Cell ◽  
Epitaxial Films ◽  
Band Edge ◽  
Near Band Edge ◽  
Pl Spectra ◽  
Edge Luminescence ◽  
Diamond Anvil ◽  
Band Edge Luminescence ◽  
First Time ◽  
High Pressure Study

ABSTRACTWe present results of photoluminescence (PL) studies of GaN, InxGa1-xN and AlxGa1-xN alloys, as well as related thin film heterostructures under hydrostatic pressure using the diamond-anvil-cell technique. The GaN PL spectra are dominated by strong and sharp near-band-edge luminescence associated with annihilations of bound excitons and intrinsic free excitons in the crystals. The spectrally well-resolved emission lines allow us to accurately determine their pressure. The PL spectra of InxGa1-xN and AlxGa1-xN epitaxial films were found to exhibit strong near-band-edge luminescence emissions. By examining the pressure dependence of these spectral features, the pressure coefficients for the PL emissions associated with the direct Γ band gap of InxGa1-xN and AlxGa1-xN were determined for the first time.

ChemInform Abstract: NEAR BAND-EDGE LUMINESCENCE IN ZINC SELENIDE GROWN FROM GALLIUM SOLUTION

1979 ◽  
Vol 10 (21) ◽  
Author(s):  
B. J. FITZPATRICK ◽  
R. N. BHARGAVA ◽  
S. P. HERKO ◽  
P. M. HARNACK
Keyword(s):  
Zinc Selenide ◽  
Band Edge ◽  
Near Band Edge ◽  
Edge Luminescence ◽  
Band Edge Luminescence

Luminescence in Si/Strained Si1−xGex Heterostructures

1995 ◽  
Vol 379 ◽  
Author(s):  
J.C. Sturm ◽  
A. St. Amour ◽  
Y. Lacroix ◽  
M.L.W. Thewalt
Keyword(s):  
Temperature Dependence ◽  
Room Temperature ◽  
Surface Passivation ◽  
Band Edge ◽  
Strained Si ◽  
Edge Luminescence ◽  
Recent Developments ◽  
High Pump ◽  
Band Edge Luminescence ◽  
First Time

ABSTRACTThis paper quickly reviews the structure of band-edge luminescence in Si/strained Si1−xGex heterostructures, and then focusses on two recent developments -- the origin of “deep” sub-bandgap luminescence which is sometimes observed in structures grown by Molecular Beam Epitaxy (MBE) and the understanding of the temperature dependence of the band-edge luminescence (up to room temperature). Strong evidence will be presented that the origin of the deep luminescence is radiation damage, and that generated defects are segregated or trapped in the SilxGex layers. The modelling of the temperature dependence by twocarrier numerical simulation is presented for the first time. The work and experimental data show convincingly that the strength of the luminescence at high temperature is controlled by recombination at the top silicon surface, which in turn can be controlled by surface passivation. At high pump powers and low temperatures, Auger recombination reduces the lifetime in the Si1−xGex layers, and leads to a luminescence vs. temperature which is flat up to 250 K and which is reduced only by a factor of three at room temperature.

scholarly journals Near band-edge luminescence of semi-insulating undoped gallium arsenide at high levels of excitation

2009 ◽  
Vol 129 (9) ◽  
pp. 1029-1031
Author(s):  
V.F. Kovalenko ◽  
S.V. Shutov ◽  
Ye.A. Baganov ◽  
M.M. Smyikalo
Keyword(s):  
Gallium Arsenide ◽  
Band Edge ◽  
Near Band Edge ◽  
Edge Luminescence ◽  
Band Edge Luminescence

Origin of the near-band-edge luminescence in MgxZn1−xO alloys

2010 ◽  
Vol 107 (1) ◽  
pp. 013704 ◽  
Author(s):  
Alexander Müller ◽  
Marko Stölzel ◽  
Christof Dietrich ◽  
Gabriele Benndorf ◽  
Michael Lorenz ◽  
...  
Keyword(s):  
Band Edge ◽  
Near Band Edge ◽  
Edge Luminescence ◽  
Band Edge Luminescence

NEAR‐BAND‐EDGE LUMINESCENCE IN GaAs:Zn

1968 ◽  
Vol 13 (2) ◽  
pp. 51-53 ◽  
Author(s):  
George W. Arnold ◽  
David K. Brice
Keyword(s):  
Band Edge ◽  
Near Band Edge ◽  
Edge Luminescence ◽  
Band Edge Luminescence
Sign in / Sign up

Export Citation Format

Share Document