Mev Ion Induced Modification of The Native Oxide of Silicon
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ABSTRACTWe have studied the native oxide of silicon (110) and the changes roduced by MeV ion bombardment using transmission ion channeling of 5.9 MeV 9Be, and Elastic Recoil Detection Analysis (ERDA). Transmission channeling was used to measure interfacial nonregistered Si and adsorbed C and 0. ERDA was used to measure the surface concentration of H. MeV ions were found to cause an increase in the interfacial nonregistered silicon which saturates at approximately one monolayer. Rapid desorption of hydrogen was observed. The effect of 2 keV electrons on the silicon native oxide was also studied by Auger Electron Spectroscopy.
2018 ◽
2003 ◽
Vol 206
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pp. 668-672
1998 ◽
Vol 136-138
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pp. 594-602
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2019 ◽
Vol 450
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pp. 385-389