Mev Ion Induced Modification of The Native Oxide of Silicon

1985 ◽  
Vol 51 ◽  
Author(s):  
R.L. Headrick ◽  
L.E. Seiberling

ABSTRACTWe have studied the native oxide of silicon (110) and the changes roduced by MeV ion bombardment using transmission ion channeling of 5.9 MeV 9Be, and Elastic Recoil Detection Analysis (ERDA). Transmission channeling was used to measure interfacial nonregistered Si and adsorbed C and 0. ERDA was used to measure the surface concentration of H. MeV ions were found to cause an increase in the interfacial nonregistered silicon which saturates at approximately one monolayer. Rapid desorption of hydrogen was observed. The effect of 2 keV electrons on the silicon native oxide was also studied by Auger Electron Spectroscopy.

1993 ◽  
Vol 321 ◽  
Author(s):  
C. A. Achete ◽  
L. Bernardino ◽  
F. L. Freire ◽  
G. Mariotto ◽  
H. Niehus

ABSTRACTSilicon crystallization has been observed to occur in copper/a-Si:H thin film bilayers annealed at 280 °C. Copper-silicide formation was observed after annealing at 200 °C. Samples characterization was made by a combination of several analytical techniques: scanning electron Microscopy, Raman spectroscopy through a microscope probe, Auger electron spectroscopy, elastic recoil detection analysis and Rutherford backscattering spectrometry. The possible role of hydrogen in this process is discussed.


2018 ◽  
Author(s):  
Dmitrii Moldarev ◽  
Elbruz M. Baba ◽  
Marcos V. Moro ◽  
Chang C. You ◽  
Smagul Zh. Karazhanov ◽  
...  

It has been recently demonstrated that yttrium oxyhydride(YHO) films can exhibit reversible photochromic properties when exposed to illumination at ambient conditions. This switchable optical propertyenables their utilization in many technological applications, such as smart windows, sensors, goggles, medical devices, etc. However, how the composition of the films affects their optical properties is not fully clear and therefore demands a straightforward investigation. In this work, the composition of YHO films manufactured by reactive magnetron sputtering under different conditions is deduced in a ternary diagram from Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA). The results suggest that stable compounds are formed with a specificchemical formula – YH<sub>2-δ</sub>O<sub>δ</sub>. In addition, optical and electrical properties of the films are investigated, and a correlation with their compositions is established. The corresponding photochromic response is found in a specific oxygen concentration range (0.45 < δ < 1.5) with maximum and minimum of magnitude on the lower and higher border, respectively.


1995 ◽  
Vol 396 ◽  
Author(s):  
K.R. Padmanabhan

AbstractThin sputtered ceramic films deposited on ceramic substrates were subjected to either Kr+ or Xe+ ion bombardment for ion beam mixing studies in ceramic-ceramic systems. The amount of mixing if any was evaluated from Rutherford backscattering and Auger electron spectroscopy. In some instances ceramic films were deposited on epitaxial films or single crystal substrates for ion channeling analysis. No significant mixing was observed in any of the systems with ZrC. However, analysis of the interface in Si3N4/ SiC system indicates appreciable mixing and ion beam induced damage to the substrate. The mixing appears to be dose dependent for heavier ions.


2021 ◽  
Author(s):  
Hélène Bureau ◽  
Hicham Khodja ◽  
Imène Estève ◽  
Matthieu Charrondière-Lewis ◽  
Eloise Gaillou ◽  
...  

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