Silicon Crystallization from Annealed Cu/A-Si:H Bilayers: A Multitechnique Study

1993 ◽  
Vol 321 ◽  
Author(s):  
C. A. Achete ◽  
L. Bernardino ◽  
F. L. Freire ◽  
G. Mariotto ◽  
H. Niehus
Keyword(s):  
Electron Spectroscopy ◽  
Rutherford Backscattering Spectrometry ◽  
Analytical Techniques ◽  
Silicide Formation ◽  
Elastic Recoil ◽  
Elastic Recoil Detection Analysis ◽  
Copper Silicide ◽  
Elastic Recoil Detection ◽  
Detection Analysis

ABSTRACTSilicon crystallization has been observed to occur in copper/a-Si:H thin film bilayers annealed at 280 °C. Copper-silicide formation was observed after annealing at 200 °C. Samples characterization was made by a combination of several analytical techniques: scanning electron Microscopy, Raman spectroscopy through a microscope probe, Auger electron spectroscopy, elastic recoil detection analysis and Rutherford backscattering spectrometry. The possible role of hydrogen in this process is discussed.

Dependence of the MoSe2 Formation on the Mo Orientation and the Na Concentration for Cu(In,Ga)Se2 Thin-Film Solar Cells

2005 ◽  
Vol 865 ◽  
Author(s):  
Daniel Abou-Ras ◽  
Debashis Mukherji ◽  
Gernot Kostorz ◽  
David Brémaud ◽  
Marc Kälin ◽  
...  
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Thin Film Solar Cells ◽  
Elastic Recoil ◽  
X Ray Diffraction ◽  
Elastic Recoil Detection Analysis ◽  
X Ray ◽  
Elastic Recoil Detection ◽  
Detection Analysis ◽  
Transmission Electron ◽  
Substrate Temperatures

AbstractThe formation of MoSe2 has been studied on polycrystalline Mo layers and on Mo single crystals in dependence of the Mo orientation, the Na concentration, and also as a function of the Se source and the substrate temperatures. The Mo substrates were selenized by evaporation of Se. The samples were analyzed by means of X-ray diffraction, Rutherford backscattering spectrometry, elastic recoil detection analysis, and by conventional and high-resolution transmission electron microscopy. It was found that the crystal structure and orientation of the MoSe2 layer change with increasing substrate temperature. However, the texture of MoSe2 does not depend on the orientation of the Mo substrate. It was also found that the MoSe2 growth is significantly influenced by the Na concentration at substrate temperatures of 450°C and 580°C.

Mev Ion Induced Modification of The Native Oxide of Silicon

1985 ◽  
Vol 51 ◽  
Author(s):  
R.L. Headrick ◽  
L.E. Seiberling
Keyword(s):  
Auger Electron Spectroscopy ◽  
Electron Spectroscopy ◽  
Auger Electron ◽  
Surface Concentration ◽  
Native Oxide ◽  
Elastic Recoil ◽  
Elastic Recoil Detection Analysis ◽  
Elastic Recoil Detection ◽  
Ion Channeling ◽  
Detection Analysis

ABSTRACTWe have studied the native oxide of silicon (110) and the changes roduced by MeV ion bombardment using transmission ion channeling of 5.9 MeV 9Be, and Elastic Recoil Detection Analysis (ERDA). Transmission channeling was used to measure interfacial nonregistered Si and adsorbed C and 0. ERDA was used to measure the surface concentration of H. MeV ions were found to cause an increase in the interfacial nonregistered silicon which saturates at approximately one monolayer. Rapid desorption of hydrogen was observed. The effect of 2 keV electrons on the silicon native oxide was also studied by Auger Electron Spectroscopy.

scholarly journals Analytical Possibilities of Rutherford Backscattering Spectrometry and Elastic Recoil Detection Analysis Methods

2016 ◽  
Vol 26 (1) ◽  
pp. 83 ◽  
Author(s):  
Vu Duc Phu ◽  
Le Hong Khiem ◽  
A. P. Kobzev ◽  
M. Kulik
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Depth Resolution ◽  
Rutherford Backscattering ◽  
Elastic Recoil ◽  
Elastic Recoil Detection Analysis ◽  
Near Surface ◽  
Elastic Recoil Detection ◽  
Depth Profiles ◽  
Detection Analysis ◽  
Three Samples

This paper presents the results of an experimental study of three samples containing various elements in the near-surface layers. The depth profiles of all the elements of different atomic masses from hydrogen to silver were investigated by Rutherford Backscattering Spectrometry (RBS) and Elastic Recoil Detection Analysis (ERDA). The experiments were performed by using the low-energy (about 2 MeV) 4He+ ion beams. The obtained results demonstrate the possibility of the RBS and ERDA methods in the investigation of depth profiles of any mass element with an atomic concentration of about 0.01 at.% and a depth resolution close to 10 nm.

Yttrium Oxyhydrides for Photochromic Applications: Correlating Composition and Optical Response

2018 ◽  
Author(s):  
Dmitrii Moldarev ◽  
Elbruz M. Baba ◽  
Marcos V. Moro ◽  
Chang C. You ◽  
Smagul Zh. Karazhanov ◽  
...  
Keyword(s):  
Medical Devices ◽  
Ternary Diagram ◽  
Optical And Electrical Properties ◽  
Ambient Conditions ◽  
Elastic Recoil ◽  
Elastic Recoil Detection Analysis ◽  
Photochromic Properties ◽  
Smart Windows ◽  
Elastic Recoil Detection ◽  
Detection Analysis

It has been recently demonstrated that yttrium oxyhydride(YHO) films can exhibit reversible photochromic properties when exposed to illumination at ambient conditions. This switchable optical propertyenables their utilization in many technological applications, such as smart windows, sensors, goggles, medical devices, etc. However, how the composition of the films affects their optical properties is not fully clear and therefore demands a straightforward investigation. In this work, the composition of YHO films manufactured by reactive magnetron sputtering under different conditions is deduced in a ternary diagram from Time-of-Flight Elastic Recoil Detection Analysis (ToF-ERDA). The results suggest that stable compounds are formed with a specificchemical formula – YH<sub>2-δ</sub>O<sub>δ</sub>. In addition, optical and electrical properties of the films are investigated, and a correlation with their compositions is established. The corresponding photochromic response is found in a specific oxygen concentration range (0.45 < δ < 1.5) with maximum and minimum of magnitude on the lower and higher border, respectively.

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