Feasibility Of Novel Si-Based Interminiband Lasers
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AbstractWe have designed a parallel interminiband lasing in superlattice structures of coherently strained Si0.5Ge0.5/Si quantum wells (QWs). Population inversion is achieved between the non-parabolic heavy-hole valence minibands locally in-k-space. Lasing transition is at 5.4μm. Our analysis indicates that an optical gain of 134/cm can be obtained when the laser structure is pumped with a current density of 5kA/cm2.
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2007 ◽
Vol 121-123
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pp. 677-680
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1996 ◽
Vol 54
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pp. 338-339
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