Analysis of Optical Gain of Strained Wurtzite InxGa1-xN/GaN Quantum Well Lasers

1997 ◽  
Vol 482 ◽  
Author(s):  
T. C. Chong ◽  
Y. C. Yeo ◽  
M. F. Li ◽  
W. J. Fan
Keyword(s):  
Quantum Wells ◽  
Mole Fraction ◽  
Current Density ◽  
Compressive Strain ◽  
Optical Gain ◽  
Numerical Approach ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Analytical Approximations ◽  
Suitable Combination

AbstractThe valence subband structures, density-of-states, and optical gain of (0001) wurtzite (WZ) InxGa1-xN/GaN quantum wells (QWs) are studied using a numerical approach without analytical approximations. We used the effective-mass parameters of GaN and InN derived using the Empirical Pseudopotential Method. By varying the well width and mole fraction of In in the well material, the effects of quantum confinement and compressive strain are studied. A narrower well width and a higher In mole fraction in the well lead to TE enhancement and TM suppression of the optical gain. From the relationship between the optical gain and the radiative current density, we obtain the transparent current density for a single QW to be 200 A/cm2. Further, we analyze the InxGa1-xN/GaN/AlGaN separate confinement heterostructure multiple-QW laser structure. It is shown that a suitable combination of well width and number of QWs should be selected in optimizing the threshold current density in such MQW lasers

Analysis of Radiative Recombination and Optical Gain in Gallium Nitride-Based Heterostructures

1996 ◽  
Vol 421 ◽  
Author(s):  
Petr G. Eliseev ◽  
Vladimir A. Smagley ◽  
Marek Osiński
Keyword(s):  
Gallium Nitride ◽  
Theoretical Calculation ◽  
Current Density ◽  
Radiative Recombination ◽  
Optical Gain ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Minimum Threshold ◽  
Effective Masses ◽  
Emitting Lasers

AbstractThreshold current density in GaN-based UV double-heterostructure lasers is predicted in the range of 2- 4 kA/cm2 using theoretical calculation of optimized heterostructure for various types of devices. Freecarrier (FC) and Coulomb-enhancement (CE) models are compared. Results are given for different combinations of effective masses. The minimum threshold current is not strongly influenced by the choice of effective masses. The FC model predicts lower than CE threshold in edge-emitting lasers, whereas the CE model predicts lower than EC threshold in thin VCSEL devices.

Low-threshold-current-density 1.5 mu m lasers using compressively strained InGaAsP quantum wells

1992 ◽  
Vol 4 (1) ◽  
pp. 10-13 ◽  
Author(s):  
J.S. Osinski ◽  
Y. Zou ◽  
P. Grodzinski ◽  
A. Mathur ◽  
P.D. Dapkus
Keyword(s):  
Quantum Wells ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Low Threshold

scholarly journals Performance characteristics of GaN/Al0.2Ga0.8N quantum dot laser at L=100Å

2018 ◽  
Vol 65 (1) ◽  
pp. 38
Author(s):  
Halima Bouchenafa ◽  
Boucif Benichou ◽  
Badra Bouabdallah
Keyword(s):  
Quantum Dot ◽  
Semiconductor Lasers ◽  
Current Density ◽  
Matrix Theory ◽  
Optical Gain ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Low Threshold ◽  
P Type ◽  
Density Matrix Theory

In this paper, a theoretical model is used to study the optical gain characteristics of  quantum dot lasers. The model is based on the density matrix theory of semiconductor lasers with relaxation broadening. The effect of doping with varying the side lengths of the box in the structure is taken into account. A comparative study of the gain spectra of p-doped, undoped and n-doped structures of  cubic quantum-dot (QD) laser respectively, is presented for various side lengths. The variation of peak gain on carrier density is also presented. The effect of side length on the variation in modal gain versus current density is plotted too. The results indicate that the p type doping is efficient to reach a better optical gain value, and to achieve low threshold current densities compared with undoped and  n-doped structures, and the optimum value for quantum dot width to achieve the lower threshold current density for the three cases is L=100A .   

Low Threshold Current Density 1.5 μm Strained-MQW Laser by n-Type Modulation-Doping

2005 ◽  
Vol 475-479 ◽  
pp. 1663-1668 ◽  
Author(s):  
Rui-ying Zhang ◽  
Wei Wang ◽  
Fan Zhou ◽  
Jing Bian ◽  
Ling-juan Zhao ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Multiple Quantum ◽  
Modulation Doping ◽  
Doping Effects ◽  
Low Threshold ◽  
Current Densities ◽  
First Time

1.5µm n-type modulation-doping InGaAsP/InGaAsP strained multiple quantum wells grown by low pressure metalorganic chemistry vapor decomposition technology is reported for the first time in the world. N-type modulation-doped lasers exhibit much lower threshold current densities than conventional lasers with undoped barrier layers. The lowest threshold current density we obtained was 1052.5 A/cm2 for 1000 µm long lasers with seven quantum wells. The estimated threshold current density for an infinite cavity length was 94.72A/cm2/well, reduced by 23.3% compared with undoped barrier lasers. The n-type modulation doping effects on the lasing characteristics in 1.5µm devices have been demonstrated.

Gas source MBE growth of 1.3μm-InAsP/InGaAsP quantum wells GRINSCH laser showing low threshold current density and high output power

1999 ◽  
Vol 201-202 ◽  
pp. 909-913 ◽  
Author(s):  
Hin Yiu Chung ◽  
Georgi Stareev ◽  
Jürgen Joos ◽  
Matthias Golling ◽  
Jürgen Mähnß ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Current Density ◽  
Threshold Current ◽  
Threshold Current Density ◽  
High Output Power ◽  
Mbe Growth ◽  
Gas Source ◽  
Low Threshold ◽  
Gas Source Mbe ◽  
High Output

scholarly journals Performance deterioration of GaN-based laser diode by V-pits in the upper waveguide layer

Nanophotonics ◽  
2020 ◽  
Vol 9 (3) ◽  
pp. 667-674
Author(s):  
Feng Liang ◽  
Degang Zhao ◽  
Desheng Jiang ◽  
Wenjie Wang ◽  
Zongshun Liu ◽  
...  
Keyword(s):  
Quantum Wells ◽  
Current Density ◽  
Optical Loss ◽  
Optical Power ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Device Performance ◽  
Nonradiative Recombination ◽  
Calculation Results ◽  
Performance Deterioration

AbstractThe effect of V-pits in the upper waveguide (UWG) on device performance of GaN-based laser diodes (LDs) has been studied. Experimental results demonstrate that in comparison with the LDs with u-In0.017Ga0.983N/u-GaN multiple UWG or u-In0.017Ga0.983N one, the LDs with a single u-GaN UWG has the best device performance. They have a smaller threshold current density, and a larger and more stable output optical power. The lowest threshold current density is as low as 1.3 kA/cm2, and the optical power reaches to 2.77 W. Furthermore, atomic force microscopy suggests that the deterioration of device performance of former kinds of devices may be attributed to the increase of V-pits’ size and quantity in the undoped-In0.017Ga0.983N UWG layer, and these V-pits could introduce more nonradiative recombination centers and exacerbate the inhomogeneity of injection current. Moreover, theoretical calculation results indicate that the increase of leakage current and optical loss are additional reasons for the device performance deterioration, which may be caused by a reduction of the potential barrier height for electrons in the quantum wells and by an increased background electron concentration in UWG.

Decreasing the threshold current density in Si lasers fabricated by using dressed-photons

2015 ◽  
Vol 1 (1) ◽  
Author(s):  
H. Tanaka ◽  
T. Kawazoe ◽  
M. Ohtsu ◽  
K. Akahane
Keyword(s):  
Spontaneous Emission ◽  
Current Density ◽  
Optical Gain ◽  
Gain Coefficient ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Annealing Process ◽  
Optical Confinement ◽  
Light Waveguide ◽  
Soi Technology

Abstract:We fabricated a silicon (Si) laser by applying a dressed-photon–phonon assisted annealing process to a ridge-type light waveguide that we fabricated via siliconon- insulator (SOI) technology. We also evaluated a nearinfrared Si photodiode having optical gain to estimate the differential gain coefficient for designing lightwaveguides. We designed light waveguides having a thickness of 15 μm to realize a large optical confinement factor. The fabricated Si laser oscillated at a wavelength of 1.4 μm. The intensity of amplified spontaneous emission (ASE) lightwas too low to be observed, because the threshold current density was so low that the Si laser started oscillating immediately after ASE occurred. The threshold current density for oscillation was estimated to be 40 A/cm

scholarly journals Effect of Quantum Well Compressive Strain Above 1% On Differential Gain and Threshold Current Density in Type-I GaSb-Based Diode Lasers

2008 ◽  
Vol 44 (12) ◽  
pp. 1204-1210 ◽  
Author(s):  
Jianfeng Chen ◽  
Dmitry Donetsky ◽  
Leon Shterengas ◽  
Mikhail V. Kisin ◽  
Gela Kipshidze ◽  
...  
Keyword(s):  
Quantum Well ◽  
Current Density ◽  
Diode Lasers ◽  
Compressive Strain ◽  
Threshold Current ◽  
Threshold Current Density ◽  
Type I ◽  
Differential Gain
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