hole effective mass
Recently Published Documents


TOTAL DOCUMENTS

70
(FIVE YEARS 9)

H-INDEX

16
(FIVE YEARS 1)

Nanomaterials ◽  
2022 ◽  
Vol 12 (2) ◽  
pp. 261
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Weng Kent Chan ◽  
Hsin-Yi Tiffany Chen ◽  
Vladimir Gritsenko

High-performance p-type thin-film transistors (pTFTs) are crucial for realizing low-power display-on-panel and monolithic three-dimensional integrated circuits. Unfortunately, it is difficult to achieve a high hole mobility of greater than 10 cm2/V·s, even for SnO TFTs with a unique single-hole band and a small hole effective mass. In this paper, we demonstrate a high-performance GeSn pTFT with a high field-effect hole mobility (μFE), of 41.8 cm2/V·s; a sharp turn-on subthreshold slope (SS), of 311 mV/dec, for low-voltage operation; and a large on-current/off-current (ION/IOFF) value, of 8.9 × 106. This remarkably high ION/IOFF is achieved using an ultra-thin nanosheet GeSn, with a thickness of only 7 nm. Although an even higher hole mobility (103.8 cm2/V·s) was obtained with a thicker GeSn channel, the IOFF increased rapidly and the poor ION/IOFF (75) was unsuitable for transistor applications. The high mobility is due to the small hole effective mass of GeSn, which is supported by first-principles electronic structure calculations.


2021 ◽  
Vol 9 ◽  
Author(s):  
Yonglan Hu ◽  
Ding Li ◽  
Rongkun Liu ◽  
Shichang Li ◽  
Chunbao Feng ◽  
...  

A heavy element is a special character for high thermoelectric performance since it generally guarantees a low lattice thermal conductivity. Here, we unexpectedly found a promising thermoelectric performance in a two-dimensional semiconducting monolayer consisting of a light boron element. Using first-principles combined with the Boltzmann transport theory, we have shown that in contrast to graphene or black phosphorus, the boron monolayer has a low lattice thermal conductivity arising from its complex crystal of hexagonal vacancies. The conduction band with an intrinsic camelback shape leads to the high DOS and a high n-type Seebeck coefficient, while the highly degenerate valence band along with the small hole effective mass contributes to the high p-type power factor. As a result, we obtained the p-type thermoelectric figure of merit up to 0.96 at 300 K, indicating that the boron monolayer is a promising p-type thermoelectric material.


Author(s):  
Issei Suzuki ◽  
Zexin Lin ◽  
Sakiko Kawanishi ◽  
Kiyohisa Tanaka ◽  
Yoshitaro Nose ◽  
...  

Valence band dispersions of single-crystalline SnS1-xSex solid solutions were observed by angle-resolved photoemission spectroscopy (ARPES). The hole effective masses, crucial factors in determining thermoelectric properties, were directly evaluated. They decrease...


2020 ◽  
Vol 8 (41) ◽  
pp. 21852-21861
Author(s):  
Xue Yong ◽  
Gang Wu ◽  
Wen Shi ◽  
Zicong Marvin Wong ◽  
Tianqi Deng ◽  
...  

First-principles calculations of a series of representing D–A copolymers demonstrated the strong Super-Exchange couplings induce not only small hole effective mass but also weak electron-phonon couplings, and eventually high thermoelectric power factor.


2019 ◽  
Vol 7 (3) ◽  
pp. 1160-1167 ◽  
Author(s):  
Mingyan Chuai ◽  
Xi Chen ◽  
Kewei Zhang ◽  
Jing Zhang ◽  
Mingzhe Zhang

The high value of hole effective mass is the main reason for the high specific capacitance of CuO–SnO2 heterojunctions.


Solar RRL ◽  
2018 ◽  
Vol 2 (10) ◽  
pp. 1870216 ◽  
Author(s):  
Jin-Peng Yang ◽  
Matthias Meissner ◽  
Takuma Yamaguchi ◽  
Xiu-Yun Zhang ◽  
Takahiro Ueba ◽  
...  

Sign in / Sign up

Export Citation Format

Share Document