The Atomic Structure of Mosaïc Grain Boundary Dislocations in GaN Epitaxial Layers
Keyword(s):
AbstractThe studied GaN layers are made of mosaYc grains rotated around the c-axis by angles in the range 0-25°. Using high-resolution electron microscopy, anisotropic elasticity calculations and image simulation, we have analyzed the atomic structure of the edge threading dislocations. Here, we present an analysis of the Σ = 7 boundary using circuit mapping in order to define the Burgers vectors of the primary and secondary dislocations. The atomic structure of the primary ones was found to exhibit 5/7 and 8 atom cycles.
1991 ◽
Vol 64
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pp. 719-733
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1998 ◽
Vol 294-296
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pp. 293-296
1988 ◽
Vol 58
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pp. 947-956
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1986 ◽
Vol 44
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pp. 390-391
1990 ◽
Vol 48
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pp. 52-53
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1990 ◽
Vol 24
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pp. 201-206
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