Channeling Measurements on Deuterium Implanted Silicon

MRS Proceedings ◽

10.1557/proc-59-487 ◽

1985 ◽

Vol 59 ◽

Cited By ~ 11

Author(s):

B. Bech Nielsen

Keyword(s):

Nuclear Reaction ◽

Tetrahedral Site ◽

Lattice Location ◽

Temperature Range ◽

Bond Center ◽

Ion Implanted

ABSTRACTThe channeling technique has been used to study the lattice location of deuterium ion-implanted into silicon. Compared to earlier measurements by Picraux and Vook, the temperature range has been extended from 30 to 500 K, and the dose has been decreased down to ≃ 8 × 1014 D/cm2. The implantation was performed at 30 K gnd at an energy of 10 keV. The channeling analysis was done using the d(3 He,p)4 He nuclear reaction. Angular scans were measured along the <100>, <110>, <111> axis and the {100}, {110}, {111} planes, Experiments were carried out on the implanted sample (30K) and after annealing to 200 and 500 K. In the as-implanted sample, 80% of the deuterium is located close to the bond center, whereas the remaining 20% is placed at the tetrahedral site. The deuterium sites change after annealing to 200 and 50OK, and the nature of these annealings stages will be discussed.

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Lattice location of O 18 in ion implanted Fe crystals by Rutherford backscattering spectrometry, channeling and nuclear reaction analysis

Nuclear Instruments and Methods in Physics Research Section B Beam Interactions with Materials and Atoms ◽

10.1016/j.nimb.2016.06.009 ◽

2016 ◽

Vol 383 ◽

pp. 47-51 ◽

Cited By ~ 3

Author(s):

Mathayan Vairavel ◽

Balakrishnan Sundaravel ◽

Binaykumar Panigrahi

Keyword(s):

Nuclear Reaction ◽

Rutherford Backscattering Spectrometry ◽

Rutherford Backscattering ◽

Lattice Location ◽

Nuclear Reaction Analysis ◽

O 18 ◽

Ion Implanted

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Defects in ion implanted silicon

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100109070 ◽

1978 ◽

Vol 36 (1) ◽

pp. 386-387

Author(s):

J.A. Lambert ◽

P.S. Dobson

Keyword(s):

Defect Structure ◽

Dislocation Loops ◽

Frank Loop ◽

Burgers Vector ◽

Temperature Range ◽

Perfect Dislocation ◽

Contrast Analysis ◽

Image Position ◽

Ion Implanted

The defect structure of ion-implanted silicon, which has been annealed in the temperature range 800°C-1100°C, consists of extrinsic Frank faulted loops and perfect dislocation loops, together with‘rod like’ defects elongated along <110> directions. Various structures have been suggested for the elongated defects and it was argued that an extrinsically faulted Frank loop could undergo partial shear to yield an intrinsically faulted defect having a Burgers vector of 1/6 <411>.This defect has been observed in boron implanted silicon (1015 B+ cm-2 40KeV) and a detailed contrast analysis has confirmed the proposed structure.

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